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  100v pnp medium power transist Datasheet PDF File

For 100v pnp medium power transist Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |   

    BUZ72L BUZ72LC67078-S1327-A2 BUZ72LSMD

Infineon Technologies AG
Part No. BUZ72L BUZ72LC67078-S1327-A2 BUZ72LSMD
Description power MOSFET, 100v, D²PAK , RDSon=0.2 Ohm, 10A, LL
Low Voltage MOSFETs - power MOSFET, 100v, TO-220, RDSon=0.2 Ohm, 10A, LL
SIPMOS power transistor
Single-coil dual-output step-down DC/DC converter for digital base band and multimedia processor supply
SIPMOS power transistor

File Size 86.42K  /  8 Page

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    IRF9510 FN2214

Intersil Corporation
Part No. IRF9510 FN2214
Description From old datasheet system
3.0A, 100v, 1.200 Ohm, P-Channel power MOSFET
3.0A/ 100v/ 1.200 Ohm/ P-Channel power MOSFET
3.0A, 100v, 1.200 Ohm, P-Channel power MOSFET(3.0A, 100v, 1.200 Ω,P沟道功率MOS场效应管)

File Size 58.92K  /  7 Page

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    IRF9520 FN2281

INTERSIL[Intersil Corporation]
Part No. IRF9520 FN2281
Description 6A, 100v, 0.600 Ohm, P-Channel power MOSFET(6A, 100v, 0.600 惟, P娌?????MOS?烘?搴??)
From old datasheet system
6A 100v 0.600 Ohm P-Channel power MOSFET
6A/ 100v/ 0.600 Ohm/ P-Channel power MOSFET

File Size 57.36K  /  7 Page

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    IRFR5410 IRFU5410 IRFRU5410 IRFR5410TRL IRFR5410TRR

IRF[International Rectifier]
Part No. IRFR5410 IRFU5410 IRFRU5410 IRFR5410TRL IRFR5410TRR
Description -100v Single P-Channel HEXFET power MOSFET in a I-Pak package
-100v Single P-Channel HEXFET power MOSFET in a D-Pak package
power MOSFET(Vdss=-100v, Rds(on)=0.205ohm, Id=-13A)
HEXFET? power MOSFET

File Size 212.33K  /  10 Page

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    INFINEON[Infineon Technologies AG]
Part No. SBM82314X SBM82314 SBM82314Z SBM81314G SBM81314N SBM81314Z SBM82314G SBM82314N
Description medium power BIDI Optical Standard Module 1550 nm Emitting, 1310 nm Receiving
From old datasheet system
Transceiver
medium power BIDI Optical Standard Module 1550 nm Emitting/ 1310 nm Receiving
Components and FTTx solutions - Tx 1550nm/Rx 1310nm, medium power

File Size 231.20K  /  11 Page

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    Agilent Technologies, Inc.
Agilent (Hewlett-Packard)
Part No. MGA-545P8 MGA-545P8-TR2 MGA-545P8-TR2G
Description 50 MHz - 7000 MHz RF/MICROWAVE WIDE BAND medium power AMPLIFIER 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8
MGA-545P8 · Low Current 22dBm medium power Amplifier In LPCC2x2 for 5-6GHz systems

File Size 111.02K  /  10 Page

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    2SA20881 2SB11321 2SB11841 2SB1198K1 2SB12601 2SB14241 2SB14271 2SB16941 2SB16951 2SB16981 2SB17051 2SB17061 2SB17071 2S

ROHM[Rohm]
Part No. 2SA20881 2SB11321 2SB11841 2SB1198K1 2SB12601 2SB14241 2SB14271 2SB16941 2SB16951 2SB16981 2SB17051 2SB17061 2SB17071 2SB17081 2SA2088_1 2SA2088
Description medium power transistor (?60V, ?0.5A)
medium power transistor (?32V,?1A)
power transistor (?60V, ?3A)
Low-frequency transistor (-80V, -0.5A)
power transistor (?80V, ?1A)
Low VCE(sat) transistor (?20V, ?3A)
power transistor (?20V, ?2A)
General purpose amplification (?30V, ?1A)
Low frequency amplifier
medium power transistor (−60V, −0.5A)

File Size 62.54K  /  4 Page

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    IRHG6110 IRHG63110 IRHG6110P IRHG6110N IRHG6110PBF IRHG6110-15

IRF[International Rectifier]
Part No. IRHG6110 IRHG63110 IRHG6110P IRHG6110N IRHG6110PBF IRHG6110-15
Description Simple Drive Requirements
100v Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
-100v 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package
RADIATION HARDENED power MOSFET
100v, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY
1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, power, MOSFET, MO-036AB

File Size 191.89K  /  14 Page

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    TSD4M150 TSD4M150F TSD4M150V

SGS Thomson Microelectronics
STMicroelectronics
ST Microelectronics
Part No. TSD4M150 TSD4M150F TSD4M150V
Description V(ds): 100v; V(dgr): 100v; V(gs): -20V; 500W; I(d): 135A; N-channel enhancement mode ISOFET power MOS transistor module. For DC-DC & DC-AC converters, SMPS & UPS, motor control, output storage for PWM, ultrasonic circuits

File Size 353.75K  /  8 Page

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    IRF540N IRF540NPBF

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF540N IRF540NPBF
Description power MOSFET(Vdss=100v, Rds(on)=44mohm, Id=33A) 功率MOSFET(减振钢板基本\u003d 100v的,的Rds(on)\u003d 44mohm,身份证\u003d 33A条)
100v Single N-Channel HEXFET power MOSFET in a TO-220AB package

File Size 97.90K  /  8 Page

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For 100v pnp medium power transist Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |   

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