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Samsung semiconductor
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| Part No. |
K7I321884C K7I323684C
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| OCR Text |
...11l 3m,10m,11m,2n,3n,11n,3p,10p,11p data inputs outputs r/w 4a read, write control pin, read active when high ld 8a synchronous load pin, bus cycle sequence is to be defined when low bw 0 , bw 1, bw 2 , bw 3 7b,7a,5a,5b block write contro... |
| Description |
1Mx36 & 2Mx18 DDRII CIO b4 SRAM
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| File Size |
414.96K /
18 Page |
 View
it Online |
Download Datasheet
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Samsung semiconductor
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| Part No. |
K7I323682C K7I321882C
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| OCR Text |
...11l 3m,10m,11m,2n,3n,11n,3p,10p,11p data inputs outputs r/w 4a read, write control pin, read active when high ld 8a synchronous load pin, bus cycle sequence is to be defined when low bw 0 , bw 1, bw 2 , bw 3 7b,7a,5a,5b block write contro... |
| Description |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
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| File Size |
413.81K /
18 Page |
View
it Online |
Download Datasheet |
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Samsung semiconductor
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| Part No. |
K7J323682C K7J321882C
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| OCR Text |
...j,2k,1m,1n,2p data inputs q0-35 11p,10m,11l,11k,10j,11f,11e,10c,11b,9p,9n,10l 9k,9g,10f,9e,9d,10b,2b,3d,3e,2f,3g,3k,2l,3n 3p,1b,2c,1e,1f,2j,1k,1l,2m,1p data outputs r/w 4a read, write control pin, read active when high ld 8a synchronous lo... |
| Description |
1Mx36 & 2Mx18 DDR II SIO b2 SRAM
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| File Size |
410.17K /
18 Page |
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it Online |
Download Datasheet |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K7Q163664B-FC16 K7Q161864B-FC16
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| OCR Text |
...,3j,3l,3m,2n data inputs q 0-17 11p,10m,11l,11k,10j,11f,11e,10c,11b,2b,3d,3e, 2f,3g,3k,2l,3n,3p data outputs w 4a write control r 8a read control bw 0 , bw 1 7b, 5a byte write control v ref 2h,10h input reference voltage zq 11h output drive... |
| Description |
512Kx36 & 1Mx18 QDR TM b4 SRAM
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| File Size |
347.73K /
17 Page |
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it Online |
Download Datasheet |
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Samsung semiconductor
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| Part No. |
K7I161882B
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| OCR Text |
...11l 3m,10m,11m,2n,3n,11n,3p,10p,11p data inputs outputs r/w 4a read, write control pin, read active when high ld 8a synchronous load pin, bus cycle sequence is to be defined when low bw 0 , bw 1, bw 2 , bw 3 7b,7a,5a,5b block write contro... |
| Description |
(K7I163682B / K7I161882B) 1Mx18-bit DDRII CIO b2 SRAM
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| File Size |
403.88K /
17 Page |
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it Online |
Download Datasheet |
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Integrated Silicon Solution, Inc.
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| Part No. |
IS61DDB21M36-250M3 IS61DDB22M18-250M3
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| OCR Text |
...q8 dq9?dq17 dq18?dq26 dq27?dq35 11p, 11m, 11l, 11k, 11j, 11f, 11e, 11c, 11b 10p, 11n, 10m, 10k, 10j, 11g, 10e, 11d, 10c 3b, 3d, 3e, 3f, 3g, 3k, 3l, 3n, 3p 2b, 3c, 2d, 2f, 2g, 3j, 2l, 3m, 2n 1m x 36 dq pins dq0?dq8 dq9?dq17 11p, 10m, 11l, 11... |
| Description |
36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs
36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs
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| File Size |
414.47K /
25 Page |
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it Online |
Download Datasheet |
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Integrated Silicon Solution, Inc.
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| Part No. |
IS61DDB41M36-250M3 IS61DDB42M18-250M3
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| OCR Text |
... ? dq17 dq18 ? dq26 dq27 ? dq35 11p, 11m, 11l, 11k, 11j, 11f, 11e, 11c, 11b 10p, 11n, 10m, 10k, 10j, 11g, 10e, 11d, 10c 3b, 3d, 3e, 3f, 3g, 3k, 3l, 3n, 3p 2b, 3c, 2d, 2f, 2g, 3j, 2l, 3m, 2n 1m x 36 dq pins dq0 ? dq8 dq9 ? dq17 11p, 10m, 11l... |
| Description |
36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs
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| File Size |
453.63K /
26 Page |
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it Online |
Download Datasheet |
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Samsung Electronic
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| Part No. |
K7R323684MK7R321884MK7R320884M
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| OCR Text |
...j,2k,1m,1n,2p data inputs q0-35 11p,10m,11l,11k,10j,11f,11e,10c,11b,9p,9n,10l 9k,9g,10f,9e,9d,10b,2b,3d,3e,2f,3g,3k,2l,3n 3p,1b,2c,1e,1f,2j,1k,1l,2m,1p data outputs w 4a write control pin,active when low r 8a read control pin,active when lo... |
| Description |
1Mx36 & 2Mx18 & 4Mx8 QDRII b4 SRAM Data Sheet
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| File Size |
383.16K /
19 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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