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INTERSIL[Intersil Corporation]
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| Part No. |
FRF250R FRF250D FRF250H
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| OCR Text |
... -20V VDS = 200V, VGS = 0 VDS = 160v, VGS = 0 VDS = 160v, VGS = 0, TC = +125oC Time = 20s VGS = 10V, ID = 23A VGS = 10V, ID = 15A VDD = 100V, ID = 23A Pulse Width = 3s Period = 300s, Rg = 25 0 VGS 10 (See Test Circuit) MIN 200 2.0 5 75 14... |
| Description |
23A, 200V, 0.115 Ohm, Rad Hard, N-Channel Power MOSFETs
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| File Size |
48.57K /
6 Page |
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Intersil, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
FRE9260R FRE9260D FRE9260H
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| OCR Text |
...20V VDS = -200V, VGS = 0 VDS = -160v, VGS = 0 VDS = -160v, VGS = 0, TC = +125oC Time = 20s VGS = -10V, ID = 19A VGS = -10V, ID = 12A VDD = -100V, ID = 19A Pulse Width = 3s Period = 300s Rg = 10 0 VGS 10 (See Test Circuit) MIN -200 -2.0 4 ... |
| Description |
19A, -200V, 0.210 Ohm, Rad Hard, P-Channel Power MOSFETs 0.21 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA
19A/ -200V/ 0.210 Ohm/ Rad Hard/ P-Channel Power MOSFETs
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| File Size |
47.04K /
6 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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| Part No. |
FRE260R FRE260D FRE260H
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| OCR Text |
... -20V VDS = 200V, VGS = 0 VDS = 160v, VGS = 0 VDS = 160v, VGS = 0,Tc = +125oC Time = 20s VGS = 10V, ID = 31A VGS = 10V, ID = 19A VDD = 100V, ID = 31A Pulse Width = 3s Period = 300s Rg = 10 0 < VGS < 10 (See Test Circuit) MIN 200 2.0 6 110 ... |
| Description |
31A/ 200V/ 0.080 Ohm/ Rad Hard/ N-Channel Power MOSFETs
31A, 200V, 0.080 Ohm, Rad Hard, N-Channel Power MOSFETs
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| File Size |
48.34K /
6 Page |
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it Online |
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STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
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| Part No. |
STTH20002TV1 STTH20002TV
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| OCR Text |
...s V
Tj = 125C IF = 100A VR = 160v dIF/dt = 200 A/s Tj = 25C Tj = 25C IF = 100A dIF/dt = 200 A/s VFR = 1.1 x VFmax IF = 100A dIF/dt = 200 A/s
2/5
(R)
STTH20002TV
Fig. 1: Peak current versus duty cycle (per diode).
IM(A)
600 20... |
| Description |
120 A, 200 V, SILICON, RECTIFIER DIODE
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
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| File Size |
103.24K /
5 Page |
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it Online |
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Advanced Power Electronics
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| Part No. |
AP04N20GK-HF
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| OCR Text |
...in-source leakage current v ds =160v, v gs =0v - - 25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =1a - 8.5 14 nc q gs gate-source charge v ds =160v - 1.1 - nc q gd gate-drain ("miller") charg... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
111.03K /
4 Page |
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IRF[International Rectifier]
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| Part No. |
UFB200FA20
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| OCR Text |
... = 25C TJ = 125C IF = 150A VR = 160v diF /dt = 200A/s
IRRM
Peak Recovery Current
-
A
TJ = 25C TJ = 125C
Qrr
Reverse Recovery Charge
-
nC
TJ = 25C TJ = 125C
Thermal - Mechanical Characteristics
Parameters
R... |
| Description |
200V 240A Ultrafast Doubler Diode in a SOT-227 package
Insulated Ultrafast Rectifier Module
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| File Size |
212.22K /
6 Page |
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it Online |
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International Rectifier
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| Part No. |
IRHY3230CM JANSR2N7381 JANSF2N7381 JANSG2N7381 JANSH2N7381 IRHY7230CM IRHY8230CM
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| OCR Text |
...age drain current ? ? 25 v ds = 160v ,v gs = 0v ? ? 250 v ds = 160v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 50 ... |
| Description |
9.4 A, 200 V, 0.49 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
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| File Size |
135.89K /
8 Page |
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it Online |
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Price and Availability
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