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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
SFI9620 SFWI9620 IRF610A
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| OCR Text |
...VGS=-30V VGS=30V VDS=-200V VDS=-160v,TC=125 C VGS=-10V,ID=-1.8A VDS=-40V,ID=-1.8A
4 O 4 O
o
o V/ C ID=-250A
VGS=0V,VDS=-25V,f =1MHz See Fig 5 VDD=-100V,ID=-3.5A, RG=18 See Fig 13
45 OO
VDS=-160v,VGS=-10V, ID=-3.5A See Fig 6 & Fi... |
| Description |
Advanced Power MOSFET
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| File Size |
252.20K /
7 Page |
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ROHM[Rohm]
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| Part No. |
2SB1275 2SB1236A 2SB1236ATV2 2SB1236ATV2P 2SB1236ATV2Q
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| OCR Text |
160v , -1.5a)
2SB1275 / 2SB1236A
Features 1) High breakdown voltage.(BVCEO = -160v) 2) Low collector output capacitance. (Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ) 4) Complements the 2SD1918 / 2SD1857A.
External d... |
| Description |
1.5 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Power Transistor (-160v , -1.5a)
Power Transistor ( 160v /1.5a)
1500 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR
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| File Size |
73.38K /
4 Page |
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IR
International Rectifier
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| Part No. |
IRFI4227PBF
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| OCR Text |
...00V, ID = 17A, VGS = 10Ve VDD = 160v, VGS = 15V, RG= 4.7 L = 220nH, C= 0.4F, VGS = 15V VDS = 160v, RG= 4.7, TJ = 25C L = 220nH, C= 0.4F, VGS = 15V VDS = 160v, RG= 4.7, TJ = 100C VGS = 0V VDS = 25V = 1.0MHz, VGS = 0V, VDS = 0V to 160v Betwe... |
| Description |
PDP SWITCH
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| File Size |
295.25K /
8 Page |
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Fairchild Semiconductor, Corp.
Tripath Technology Inc.
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| Part No. |
FDP39N20
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| OCR Text |
... 25C VDS = 200V, VGS = 0V VDS = 160v, TC = 125C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 19.5A VDS = 40V, ID = 19.5A VDS = 25V, VGS = 0V, f = 1.0MHz
(Note 4)
Min.
200 -----3.0 ------
Typ.
-0.2 -... |
| Description |
DIODE ZENER SINGLE 350mW 16Vz 7.8mA-Izt 0.05 0.1uA-Ir 12 SOT-23 3K/REEL 39 A, 200 V, 0.066 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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| File Size |
852.40K /
8 Page |
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IRF[International Rectifier]
International Rectifier, Corp.
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| Part No. |
JANSR2N7498T2 IRHF57230SE
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| OCR Text |
...0mA VDS > 15V, IDS = 4.5A VDS= 160v ,VGS=0V VDS = 160v, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 7.0A VDS = 100V VDD = 100V,...1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD trr Q RR ton Continu... |
| Description |
200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-205AF package
RADIATION HARDENED POWER MOSFET THRU-HOLE ( TO-39) 抗辐射功率MOSFET的通孔（到39
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| File Size |
125.69K /
8 Page |
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Shantou Huashan Electronic
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| Part No. |
H649A
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| OCR Text |
...
-55~150ae 150ae 20W 1W -180V -160v -5V -1.5a 1D Emitter E 2D Collector C 3D Base B TO-126ML
Collector-Base Voltage- - - - Collector-Emitter Voltage- - Emitter-Base Voltage- Collector Current DC(c)-
Electrical Characteristics
Sy... |
| Description |
Low Frequancy Power Amplifier
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| File Size |
26.98K /
1 Page |
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it Online |
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Price and Availability
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