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C2004 SMV1440L ON0081 AD871SE DND9000 UF2005CT KT0830E LT3570
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  2-10u1b Datasheet PDF File

For 2-10u1b Found Datasheets File :: 161    Search Time::2.797ms    
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    TOSHIBA
Part No. 2SK3798
OCR Text ...rce on resistance: r ds (on) = 2.5 (typ.) ? high forward transfer admittance: |y fs | = 2.8 s (typ.) ? low leakage current: i dss = ...10u1b weight : 1.7 g (typ.) 1 3 2 2sk3798 2004-12-07 2 electrical characteristics (ta = 25...
Description MOSFET 2SK/2SJ Series

File Size 219.72K  /  6 Page

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    TK40A10K3

Toshiba Semiconductor
Part No. TK40A10K3
OCR Text ...) ? enhancement-mode: v th = 2.0 to 4.0 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings (ta = 25c) characteristics symbo...10u1b weight: 1.7 g (typ.) internal connection 1 3 2 tk40a10k3 2009-09-29 2 electrical chara...
Description TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS?

File Size 196.79K  /  6 Page

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    K6A65D

Toshiba Semiconductor
Part No. K6A65D
OCR Text ...) ? enhancement-mode: v th = 2.0 to 4.0 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings (ta = 25c) characteristics symbo...10u1b weight : 1.7 g (typ.) 1 3 2 1: gate 2: drain 3: source internal connection www.datashe...
Description Search --To TK6A65D

File Size 266.06K  /  6 Page

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    Toshiba
Part No. TK8A50D
OCR Text ...) ? enhancement mode: v th = 2.0 to 4.0 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings (ta = 25c) characteristics sym...10u1b weight : 1.7 g (typ.) 1 3 2 www.datasheet.net/ datasheet pdf - http://www.datasheet4u.co....
Description Field Effect Transistor

File Size 243.43K  /  7 Page

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    2SK356409

Toshiba Semiconductor
Part No. 2SK356409
OCR Text ... transfer admittance: |y fs | = 2.6 s (typ.) ? low leakage current: i dss = 100 a (v ds = 720 v) ? enhancement mode: v th = 2.0 t...10u1b weight : 1.7 g (typ.) 1 3 2 2sk3564 2009-09-29 2 electrical characteristics (ta = 25...
Description Switching Regulator Applications

File Size 219.03K  /  6 Page

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    2SK356610

Toshiba Semiconductor
Part No. 2SK356610
OCR Text ... transfer admittance: |y fs | = 2.0 s (typ.) ? low leakage current: i dss = 100 a (max) (v ds = 720 v) ? enhancement mode: v th =...10u1b weight : 1.7 g (typ.) 1 3 2 2sk3566 2010-05-06 2 electrical characteristics (ta = 25...
Description Switching Regulator Applications

File Size 209.83K  /  6 Page

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    TK12A60D

Toshiba Semiconductor
Part No. TK12A60D
OCR Text ...) ? enhancement-mode: v th = 2.0 to 4.0 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings (ta = 25c) characteristics symbo...10u1b weight : 1.7 g (typ.) 1 3 2 1: gate 2: drain 3: source internal connection tk12a60d ...
Description Switching Regulator Applications
   Switching Regulator Applications

File Size 180.74K  /  6 Page

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    K12A50D

Toshiba Semiconductor
Part No. K12A50D
OCR Text ...) ? enhancement mode: v th = 2.0 to 4.0 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings (ta = 25c) characteristics sym...10u1b weight: 1.7 g (typ.) 1 3 2 http://www.datasheet4u.net/ datasheet pdf - http://www.datashe...
Description Search --To TK12A50D

File Size 242.61K  /  6 Page

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    TK3A65DA

Toshiba Semiconductor
Part No. TK3A65DA
OCR Text ...rce on-resistance: r ds (on) = 2.3 (typ.) ? high forward transfer admittance: |y fs | = 2.2 s (typ.) ? low leakage current: i dss = 1...10u1b weight: 1.7 g (typ.) characteristics symbol max unit thermal resistance, channel to case r ...
Description Switching Regulator Applications

File Size 200.30K  /  6 Page

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    2SK4016Q

Toshiba Semiconductor
Part No. 2SK4016Q
OCR Text ... ? enhancement model: v th = 2.0 to 4.0 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings (ta = 25c) characteristic symbol r...10u1b weight : 1.7 g (typ.) 1 3 2 2sk4016 2010-01-29 2 electrical characteristics (ta = 2...
Description Switching Regulator Applications

File Size 238.76K  /  6 Page

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For 2-10u1b Found Datasheets File :: 161    Search Time::2.797ms    
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