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  20v 6a dc-to-dc Datasheet PDF File

For 20v 6a dc-to-dc Found Datasheets File :: 3421    Search Time::3.578ms    
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    IRLR7843 IRLU7843

IRF[International Rectifier]
Part No. IRLR7843 IRLU7843
OCR Text ... 24V, VGS = 0V, TJ = 125C VGS = 20v VGS = -20v VDS = 15V, ID = 12A VDS = 15V VGS = 4.5V ID = 12A See Fig. 16 VDS = 15V, VGS = 0V VDD = 15V, ...6a 9.6a BOTTOM 12A TOP RG 20v VGS D.U.T IAS tp + V - DD 4000 A 0.01 3000 ...
Description 30V Single N-Channel HEXFET Power MOSFET in a I-Pak package
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package

File Size 199.60K  /  11 Page

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    Diodes
Part No. ZXT10P20DE6TA ZXT10P20DE6TC
OCR Text ...e o f diodes incorporated 20v pnp low saturati on switching tran sistor in sot26 features ? bv ceo > -20v ? i c = -2.5a continuous collector current ? i cm = -6a peak pulse current ? r ce(sat) = 96m? for a low equivale...
Description Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors

File Size 123.12K  /  7 Page

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    SPN4526 SPN4526S8RGB

SYNC POWER Crop.
Part No. SPN4526 SPN4526S8RGB
OCR Text ...0uA IGSS IDSS ID(on) VDS=0V,VGS=20v VDS=40V,VGS=0V VDS=40V,VGS=0V TJ=85 VDS= 5V,VGS =4.5V 40 0.5 1.0 100 1 10 10 0.020 0.023 0.027 13 0.8...6a gfs VDS=15V,ID=6.2A VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDD=20v,RL=4 ID5.0A,VGEN=1...
Description N-Channel Enhancement Mode MOSFET

File Size 216.67K  /  8 Page

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    SPN2302A SPN2302AS23RG

SYNC POWER Crop.
Part No. SPN2302A SPN2302AS23RG
OCR Text ...surface mount package. FEATURES 20v/4.0A,RDS(ON)=75m@VGS=4.5V 20v/3.4A,RDS(ON)=95m@VGS=2.5V 20v/2.8A,RDS(ON)=135m@VGS=1.8V Super high densit...6a VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDD=6V,RL=6 ID1.0A,VGEN=4.5V RG=6 VDS=6V,VGS=0...
Description N-Channel Enhancement Mode MOSFET

File Size 203.85K  /  8 Page

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    AP4575GM-HF AP4575GM-HF-14

Advanced Power Electronics Corp.
Advanced Power Electron...
Part No. AP4575GM-HF AP4575GM-HF-14
OCR Text ...gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =6a - 17 29 nc q gs gate-source charge v ds =48v - 4.5 - nc q gd gate-drain ("miller") charge v gs =4.5v - 10 - nc t d(on) turn-on delay time 2 v ds =30v...
Description Simple Drive Requirement, Low On-resistance
   Simple Drive Requirement

File Size 79.83K  /  7 Page

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    FDMS5672 FDMS56720712

Fairchild Semiconductor
Part No. FDMS5672 FDMS56720712
OCR Text ...o 25C VDS = 48V, VGS = 0V VGS = 20v, VDS = 0V 60 59 1 100 V mV/C A nA On Characteristics VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source T...6a Drain to Source On Resistance VGS = 6V, ID = 8A VGS = 10V, ID = 10.6a, TJ = 125C VDS = 10V, ID = ...
Description N-Channel UltraFET Trench? MOSFET
N-Channel UltraFET Trench㈢ MOSFET

File Size 533.69K  /  7 Page

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    AP4575GM12

Advanced Power Electronics Corp.
Part No. AP4575GM12
OCR Text ...gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =6a - 17 29 nc q gs gate-source charge v ds =48v - 4.5 - nc q gd gate-drain ("miller") charge v gs =4.5v - 10 - nc t d(on) turn-on delay time 2 v ds =30v...
Description Simple Drive Requirement, Low On-resistance

File Size 79.81K  /  7 Page

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    STR7101 STR7000

Sanken electric
Part No. STR7101 STR7000
OCR Text ... 15.0 15.2 23.7 24.0 24.3 v in =20v, i o =6.0a v in =27v, i o =6.0a v in =30v, i o =6.0a v in =40v, i o =6.0a 70 82 84 87 v in =20v, i o =6.0a v in =27v, i o =6.0a v in =30v, i o =6.0a v in =40v, i o =6.0a 35 35 35 35 v in =20v, i ...
Description (STR7101 - STR7103) Separate Excitation Switching Type
(STR7000 - STR7003) Separate Excitation Switching Type

File Size 239.29K  /  5 Page

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    ILA03N60 Q67040-S4625 ILB03N60 Q67040-S4626 Q67040-S4627 Q67040-S4628 ILP03N60 ILD03N60

Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. ILA03N60 Q67040-S4625 ILB03N60 Q67040-S4626 Q67040-S4627 Q67040-S4628 ILP03N60 ILD03N60
OCR Text ... C E = 0V ,V G E = 2 0V V C E = 20v, I C = 3. 0A Symbol Ciss Coss Crss Co(er) QGE QGC QG Vm QGE QGC QG Vm Conditions V C E = 25V, V G ...6a 25W 20W IC, COLLECTOR CURRENT POWER DISSIPATION Other Packages 4A Other Pack...
Description 3A / 600V IGBT with monolithically integrated diode for resonant-halfbridge topologies in lighting ballast (40W-120W)
From old datasheet system
High Speed CMOS Logic Hex Non-Inverting Buffers 16-SO -55 to 125 LightMOS功率晶体
LightMOS Power Transistor LightMOS功率晶体

File Size 327.69K  /  15 Page

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    SPN4506 SPN4506S8RGB

SYNC POWER Crop.
Part No. SPN4506 SPN4506S8RGB
OCR Text ...0uA IGSS IDSS ID(on) VDS=0V,VGS=20v VDS=40V,VGS=0V VDS=40V,VGS=0V TJ=85 VDS= 5V,VGS =4.5V 40 0.5 1.0 100 1 10 10 0.007 0.008 0.013 13 0.8...6a gfs VDS=15V,ID=6.2A VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDD=20v,RL=4 ID5.0A,VGEN=1...
Description N-Channel Enhancement Mode MOSFET

File Size 214.88K  /  8 Page

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For 20v 6a dc-to-dc Found Datasheets File :: 3421    Search Time::3.578ms    
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