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Advanced Power Electron...
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| Part No. |
AP6921GMT-HF-16
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| OCR Text |
...reakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =10a - 8.9 11.5 m ? v gs =4.5v, i d =6a - 17.2 21.5 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 1.4 3 v g fs forwar... |
| Description |
Simple Drive Requirement
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| File Size |
127.95K /
8 Page |
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it Online |
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Advanced Power Electron...
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| Part No. |
AP6920GMT-HF-16
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| OCR Text |
...reakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =12a - 6.5 8.5 m ? v gs =4.5v, i d =8a - 9.3 12 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 1.32 3 v g fs forward t... |
| Description |
Simple Drive Requirement
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| File Size |
129.76K /
8 Page |
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it Online |
Download Datasheet |
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List of Unclassifed Manufacturers
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| Part No. |
SFD45N03L
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| OCR Text |
...Leakage, Reverse VGS = 0V, ID = 250ua ID = 250ua, referenced to 25 C VDS = 30V, VGS = 0V VDS = 24V, TC = 125 C VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VDS = VGS, ID = 250ua VGS = 10 V, ID = 18.5A VGS = 5 V, ID = 18.5A 30 0.03 1 10 100 -100... |
| Description |
Logic N-Channel MOSFET
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| File Size |
1,060.22K /
7 Page |
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it Online |
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Xian Semipower Electron...
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| Part No. |
SW030R04VT
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| OCR Text |
...own voltage v gs =0v, i d =250ua 40 v bv dss / t j breakdown voltage temperature coefficient i d =250ua, referenced to 25 o c 0.02 v/ o c i dss drain to source leakage current v ds =40v, v gs =0v 1... |
| Description |
N-channel Enhanced mode TO-220 MOSFET
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| File Size |
532.34K /
6 Page |
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it Online |
Download Datasheet |
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Advanced Power Electron...
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| Part No. |
AP4N4R2H
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| OCR Text |
...reakdown voltage v gs =0v, i d =250ua 40 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =40a - - 4.2 m ? v gs =4.5v, i d =20a - - 7.2 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transco... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
108.34K /
6 Page |
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it Online |
Download Datasheet |
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Advanced Power Electron...
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| Part No. |
AP4N3R6P
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| OCR Text |
...reakdown voltage v gs =0v, i d =250ua 40 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =40a - - 3.6 m ? v gs =4.5v, i d =30a - - 5 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transcond... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
106.56K /
6 Page |
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it Online |
Download Datasheet |
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Advanced Power Electron...
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| Part No. |
AP4N3R6H
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| OCR Text |
...reakdown voltage v gs =0v, i d =250ua 40 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =40a - - 3.6 m ? v gs =4.5v, i d =30a - - 5 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transcond... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
107.38K /
6 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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