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Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
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Part No. |
AM29LV001BT-45RFCB AM29LV001BT-45RFIB AM29LV001BT-45RJCB AM29LV001BB-55JIB AM29LV001BT-55JIB AM29LV001BB-55JCB AM29LV001BT-55JCB AM29LV001BB-90JIB AM29LV001BB-70JIB AM29LV001BB-55JE AM29LV001BB-90EI AM29LV001BB-70EIB AM29LV001BB-90EIB AM29LV001BT-55EIB AM29LV001BB-90FIB AM29LV001BB-70JCB AM29LV001BB-90FCB AM29LV001BB-90ECB AM29LV001BB-90JEB AM29LV001BT-90EIB AM29LV001BT-90EEB AM29LV001BB-90EE AM29LV001BB-90FE AM29LV001BT-55ECB AM29LV001BB-70FC AM29LV001BB-70FI AM29LV001BB-70FE AM29LV001BT-70EEB AM29LV001BT-70FEB AM29LV001BT-55EEB AM29LV001BT-70EI AM29LV001BT-70JE AM29LV001BT-70FC AM29LV001BT-55JE AM29LV001BB-70FIB
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Description |
1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash memory 128K x 8 FLASH 3V prom, 90 ns, PDSO32 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash memory 128K x 8 FLASH 3V prom, 70 ns, PDSO32 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash memory 128K x 8 FLASH 3V prom, 55 ns, PDSO32 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash memory 128K x 8 FLASH 3V prom, 70 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash memory 128K x 8 FLASH 3V prom, 45 ns, PDSO32 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash memory 128K x 8 FLASH 3V prom, 90 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash memory 128K x 8 FLASH 3V prom, 55 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash memory 1兆位28亩8位)的CMOS 3.0伏,只引导扇区闪 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash memory 1兆位128亩8位)的CMOS 3.0伏,只引导扇区闪
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File Size |
217.32K /
38 Page |
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Spansion, Inc. SPANSION LLC
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Part No. |
S29GL01GP90FFI012 S29GL01GP90FFIR12 S29GL128P11FFIR10 S29GL128P11FFI010 S29GL128P90FFIR12 S29GL128P90FAIR10 S29GL128P11FFIV10 S29GL128P10FFI012 S29GL128P10TAIV12 S29GL128P90TFIR10 S29GL128P90TFI010 S29GL128P10FFIR12
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Description |
3.0 Volt-only Page Mode Flash memory featuring 90 nm MirrorBit Process Technology 3.0伏只页面模式闪存具有90纳米MirrorBit工艺技 3.0 Volt-only Page Mode Flash memory featuring 90 nm MirrorBit Process Technology 128M x 1 FLASH 3V prom, 110 ns, PBGA64 3.0 Volt-only Page Mode Flash memory featuring 90 nm MirrorBit Process Technology 128M x 1 FLASH 3V prom, 90 ns, PBGA64 3.0 Volt-only Page Mode Flash memory featuring 90 nm MirrorBit Process Technology 128M x 1 FLASH 3V prom, 100 ns, PBGA64 3.0 Volt-only Page Mode Flash memory featuring 90 nm MirrorBit Process Technology 128M x 1 FLASH 3V prom, 90 ns, PDSO56
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File Size |
2,126.16K /
77 Page |
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Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
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Part No. |
HY27LF081G2M-TCP HY27LF081G2M-TCS HY27LF161G2M-TCB HY27LF161G2M-TCS HY27SF081G2M-TCP HY27SF081G2M-TCB HY27LF081G2M-TCB HY27LF161G2M-TCP HY27SF081G2M-F HY27UF081G2M-F HY27SF161G2M-FP HY27UF161G2M-FP HY27SF081G2M-V HY27UF081G2M-V HY27SF161G2M-VP HY27UF161G2M-VP HY27LF081G2M-VCB HY27LF081G2M-VCP HY27LF081G2M-VCS HY27LF081G2M-VEP HY27LF081G2M-VES HY27LF081G2M-TMB HY27LF081G2M-TMP HY27LF081G2M-TMS HY27LF161G2M-TMB HY27LF161G2M-TMP HY27LF161G2M-TMS HY27SF081G2M-TMB HY27SF081G2M-TMP HY27SF081G2M-TMS HY27SF161G2M-TMB HY27SF161G2M-TMP HY27SF161G2M-TMS HY27UF081G2M-TMB HY27UF081G2M-TMP HY27UF081G2M-TMS HY27UF161G2M-TMB HY27UF161G2M-TMP HY27UF161G2M-TMS HY27LF081G2M-VMB HY27LF081G2M-VMP HY27LF081G2M-VMS HY27LF161G2M-VMB HY27LF161G2M-VMP HY27LF161G2M-VMS HY27SF081G2M-VMB HY27SF081G2M-VMP HY27SF161G2M-VMB HY27SF161G2M-VMP HY27SF161G2M-VMS HY27UF081G2M-VMB HY27UF081G2M-VMP HY27UF081G2M-VMS HY27UF161G2M-VMB HY27UF161G2M-VMP HY27UF161G2M-VMS HY27LF081G2M-VEB HY27SF081G2M-VMS HY27LF081G2M-TPMP HY27LF081G2M-VPMP HY27SF081G2M-TPMP HY27SF081G2M-VPMP HY27LF161G2M-TPIS HY27SF161G2M-TPIS HY27LF161G2M-TIS HY27LF161G2M-VIS HY27SF161G2M-TIS HY27SF161G2M-VIS HY27LF161G2M-VPIS HY27SF081G2M-TEP HY27SF081G2M-TP
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Description |
Inductor; Inductor Type:Power; Inductance:2uH; Inductance Tolerance: 25 %; Series:CTx; Package/Case:PCB Surface Mount; Core Material:Amorphous Metal; Current, lt rms Parallel:7.26A; Current, lt rms Series:3.63A RoHS Compliant: Yes 3.3V Differential Transceiver 8-PDIP -40 to 85 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash memory 1Gbit的(128Mx8bit / 64Mx16bit)NAND闪存 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash memory 128M x 8 FLASH 1.8V prom, 30 ns, PDSO48 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash memory 64M x 16 FLASH 1.8V prom, 30 ns, PDSO48 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash memory 64M x 16 FLASH 3.3V prom, 30 ns, PDSO48 CONNECTOR ACCESSORY 128M x 8 FLASH 3.3V prom, 30 ns, PDSO48 CONNECTOR ACCESSORY 64M x 16 FLASH 1.8V prom, 30 ns, PDSO48 Power Heater Soldering Tip; Tip/Nozzle Style:Chisel; Tip/Nozzle Thickness:0.2"; Tip/Nozzle Size:0.40 1Gbit的(128Mx8bit / 64Mx16bit)NAND闪存 COILTRONICS RoHS Compliant: Yes 1Gbit的(128Mx8bit / 64Mx16bit)NAND闪存 Power Heater Soldering Tip; Tip/Nozzle Style:Chisel; Tip/Nozzle Thickness:0.1"; Tip/Nozzle Size:0.43 RoHS Compliant: Yes 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash memory
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File Size |
484.04K /
48 Page |
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Intel, Corp.
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Part No. |
GE28F256L30T110 GE28F128L30B110
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Description |
1.8 Volt Intel StrataFlashWireless memory with 3.0-Volt I/O (L30) 16M x 16 FLASH 1.8V prom, 88 ns, PBGA79 1.8 Volt Intel StrataFlashWireless memory with 3.0-Volt I/O (L30) 8M x 16 FLASH 1.8V prom, 88 ns, PBGA56
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File Size |
1,368.33K /
102 Page |
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Price and Availability
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