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ON Semiconductor
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Part No. |
NTR4502PT1 NTR4502PT1G NTR4502P NTR4502PT3 NTR4502PT3G
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OCR Text |
...5 260 W A C A C W A SOT-23 CASE 318 STYLE 21 TR2 M G Unit V V A D
MARKING DIAGRAM/ PIN ASSIGNMENT
Drain 3 TR2 M G G 1 Gate = Device Code...0 V, IS = -1.25 A VGS = 0 V, dISD/dt = 100 A/ms, IS = -1.25 A VGS =-10 V, VDD = -15 V, ID = -1.95 A,... |
Description |
Power MOSFET −30 V, −1.95 A, Single, P−Channel, SOT−23
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File Size |
127.48K /
5 Page |
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TY Semicondutor
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Part No. |
2SC5343
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OCR Text |
... 3. base 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification 2sc5343
absolute maximum rati...0 60 - - v collector-emitter breakdown voltage bv ceo i c =1ma, i b =0 50 - - v emitter-base ... |
Description |
Diodes
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File Size |
358.82K /
3 Page |
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TY Semiconductor Co., Ltd
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Part No. |
2SA1213
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OCR Text |
...1213 product specification 4008-318-123
smd type electrical characteristics curves h fe classification marking rank o y hfe 70 140 120 240 n test circuit sales@twtysemi.com 2 of 3 http://www.twtysemi.com 2sa1213 product specification 4008... |
Description |
Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1A) High Speed Switching Time: tstg = 1.0ìs(typ.)
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File Size |
558.87K /
3 Page |
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TY Semiconductor Co., Ltd
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Part No. |
2SC1653
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OCR Text |
...1653 product specification 4008-318-123
typical characteristics fig.1 total power dissipation vs. ambient temperature fig.2 collector current vs. collector to emitter voltage fig.3 collector current vs. base to emitter voltage fig.4 colle... |
Description |
High DC current gain.hFE=130 typ.(VCE=3.0V,IC=15mA) High voltage VCEO : 130V
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File Size |
250.48K /
3 Page |
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