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ST Microelectronics
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| Part No. |
STP8NK100Z
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| OCR Text |
...ain charge v dd =800v, i d = 6.3a v gs =10v (see figure 17) 73 12 40 102 nc nc nc
2 electrical characteristics stf8nk100z - stp8nk100z 4/13 table 6. switching times table 7. source drain diode table 8. gate-source zener diode (1) li... |
| Description |
N-CHANNEL Zener-Protected SuperMESH TM MOSFET
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| File Size |
294.00K /
13 Page |
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SANYO
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| Part No. |
2SC3752
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| OCR Text |
3a Switching Regulator Applications
Features
* High breakdown voltage and high reliability. * Fast switching speed. * Wide ASO. * Adoption...800v, IE=0 VEB=5V, IC=0 VCE=5V, IC=0.2A VCE=5V, IC=1A VCE=10V, IC=0.2A VCB=10V, f=1MHz 10* 8 15 60 M... |
| Description |
NPN Triple Diffused Planar Silicon Transistor 800v/3a Switching Regulator Applications
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| File Size |
107.02K /
5 Page |
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Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
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| Part No. |
FS3KM-16A FS30KMJ-3
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| OCR Text |
.................................. 3a Viso ................................................................................ 2000V
q
e
...800v, VGS = 0V ID = 1mA, VDS = 10V ID = 1.5A, VGS = 10V ID = 1.5A, VGS = 10V ID = 1.5A, VDS = 10V VD... |
| Description |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE 3 A, 800 V, 3.3 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
47.11K /
4 Page |
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友顺科技股份有限公司
UTC[Unisonic Technologies]
http://
Unisonic Technologies Co., Ltd.
UNISONIC TECHNOLOGIES CO LTD
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| Part No. |
2SC5027-X-TF3-T 2SC5027-R-TA3-T 2SC5027-X-TA3-T 2SC5027 2SC5027-N-TA3-T 2SC5027-N-TF3-T 2SC5027-O-TA3-T 2SC5027-O-TF3-T 2SC5027-R-TF3-T 2SC5027L-X-TF3-T 2SC5027L-N-TA3-T 2SC5027L-N-TF3-T 2SC5027L-O-TA3-T 2SC5027L-O-TF3-T 2SC5027L-R-TA3-T 2SC5027L-R-TF3-T 2SC5027L-X-TA3-T 2SC502710
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| OCR Text |
...=1mA, IC=0 IC=1.5A, IB1= -IB2=0.3a VCEX(SUS) L=2mH, Clamped ICBO VCB=800v, IE=0 IEBO VEB=5V, IC=0 hFE1 VCE=5V, IC=0.2A VCE=5V, IC=1A hFE 2 VCE (SAT) IC=1.5A, IB=0.3a VBE (SAT) IC=1.5A, IB=0.3a Cob VCB=10V, f=1MHz, IE=0 fT VCE=10V, IC=0.2A t... |
| Description |
HIGH VOLTAGE AND HIGH RELIABILITY 800 V, NPN, Si, POWER TRANSISTOR, TO-220AB
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| File Size |
46.73K /
4 Page |
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TY Semiconductor Co., Ltd
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| Part No. |
2SC3405
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| OCR Text |
...(max.) tf=1.0s (max.) at i c =0.3a high colletor breakdown voltage: v ceo =800v absolute maximum ratings ta = 25 parameter symbol rating unit collector to base voltage v cbo 900 v collector to emitter voltage v ceo 800 v emitter to base vol... |
| Description |
Excellent Switching Times tr=1.0ìs (Max.) tf=1.0ìs (Max.) at IC=0.3a
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| File Size |
170.81K /
1 Page |
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SemeLAB
SEME-LAB[Seme LAB]
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| Part No. |
BUL62B
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| OCR Text |
...V IC = 0 IC = 0.1A IC = 1A IC = 3a IC = 100mA TC = 125C VCE = 4V VCE = 4V VCE = 4V TC = 125C IB = 20mA IB = 0.4A IB = 0.6A IB = 0.4A IB = 0.6A VCE = 4V f = 1MHz VCE = 400V
V 10 100 100 10 100
A A A
20 15 10 5
30 25 15 0.05 0.1 0... |
| Description |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
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| File Size |
19.21K /
2 Page |
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SEME-LAB[Seme LAB]
TT electronics Semelab Limited
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| Part No. |
BUL52B BUL52
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| OCR Text |
... IC = 0 IC = 100mA IC = 1A IC = 3a IC = 100mA TC = 125C VCE = 5V VCE = 5V VCE = 1V TC = 125C IB = 20mA IB = 0.2A IB = 0.4A IB = 0.6A IB = 0.2A IB = 0.4A IB = 0.6A VCE = 4V f = 1MHz IC = 1A IC = 2A IC = 3a IC = 1A VCE = 400V
V 10 100 100 ... |
| Description |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
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| File Size |
19.27K /
2 Page |
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STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
STF8NK100Z STP8NK100Z P8NK100Z F8NK100Z
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| OCR Text |
... VDS=0 to 800v VDD=800v, ID = 6.3a VGS =10V (see Figure 17)
3/13
2 Electrical characteristics
STF8NK100Z - STP8NK100Z
Table 6.
Symbol td(on) tr td(off) tf
Switching times
Parameter Turn-on Delay Time Rise Time Test Conditio... |
| Description |
N-CHANNEL 1000V - 1.60OHM - 6.5A - TO-220 - TO-220FP Zener-Protected SuperMESH TM MOSFET
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| File Size |
266.73K /
13 Page |
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it Online |
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Price and Availability
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