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Samsung semiconductor
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| Part No. |
K7S1636U4C
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| OCR Text |
...9k,9g,10f,9e,9d,10b,2b,3d,3e,2f,3g,3k,2l,3n 3p,1b,2c,1e,1f,2j,1k,1l,2m,1p data outputs w 4a write control pin,active when low r 8a read control pin,active when low bw 0 , bw 1, bw 2 , bw 3 7b,7a,5a,5b block write control pin,active when low... |
| Description |
512Kx36 & 1Mx18 QDR II b4 SRAM
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| File Size |
416.02K /
20 Page |
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Renesas Technology / Hitachi Semiconductor
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| Part No. |
HM66WP18513BP-65
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| OCR Text |
...6C, 6R 4P, 4N 2T, 6T 4T 5L, 5G, 3g, 3L A (x 36-bit x 18-bit common) A0,A1 A (x 18-bit) A (x 36-bit) BWa, BWb BWc, BWd (x 36-bit) Input Synchronous byte write enables: These active LOW inputs allow individual bytes to be written and must mee... |
| Description |
9M Flow Through Zero Bus Latency (ZBL) SRAM
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| File Size |
272.62K /
31 Page |
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SAMSUNG[Samsung semiconductor]
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| Part No. |
K7R320982C K7R323682C-FEC30 K7R321882C K7R323682C K7R323682C-FC20 K7R323682C-FC25 K7R323682C-FC30 K7R323682C-FCI20 K7R323682C-FCI25 K7R323682C-FCI30 K7R323682C-FEC20 K7R323682C-FEC25
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| OCR Text |
...9K,9G,10F,9E,9D,10B,2B,3D,3E,2F,3g,3K,2L,3N 3P,1B,2C,1E,1F,2J,1K,1L,2M,1P 4A 8A 7B,7A,5A,5B 2H,10H 11H 5F,7F,5G,7G,5H,7H,5J,7J,5K,7K 4E,8E,4...active when low Read Control Pin, active when low Block Write Control Pin, active when low Input Ref... |
| Description |
1Mx36 & 2Mx18 & 4Mx9 QDR II b2 SRAM
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| File Size |
455.05K /
20 Page |
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it Online |
Download Datasheet |
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Integrated Silicon Solution, Inc
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| Part No. |
IS61QDPB42M36-400M3 IS61QDPB42M36-400M3L IS61QDPB44M18-400M3L IS61QDPB42M36-300M3 IS61QDPB42M36-300M3L IS61QDPB42M36-333M3 IS61QDPB42M36-333M3L IS61QDPB42M36-375M3 IS61QDPB42M36-375M3L IS61QDPB44M18-300M3 IS61QDPB44M18-300M3L IS61QDPB44M18-333M3 IS61QDPB44M18-333M3L IS61QDPB44M18-375M3 IS61QDPB44M18-375M3L IS61QDPB44M18-400M3
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| OCR Text |
...0F, 9E, 9D, 10B 2B, 3D, 3E, 2F, 3g, 3K, 2L, 3N, 3P 1B, 2C, 1E, 1F, 2J, 1K, 1L, 2M, 1P 10P, 11N, 11M, 10K, 11J, 11G, 10E, 11D, 11C 3B, 3C, 2D...active low. Read control, active low. 2M x 36 byte write control, active low. 4M x 18 byte write con... |
| Description |
72 Mb (2M x 36 & 4M x 18) QUADP (Burst of 4) Synchronous SRAMs
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| File Size |
644.64K /
28 Page |
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Download Datasheet |
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Samsung semiconductor
Maxim Integrated Products, Inc.
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| Part No. |
K7S1636U4C K7S1618U4C-EC330
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| OCR Text |
...9k,9g,10f,9e,9d,10b,2b,3d,3e,2f,3g,3k,2l,3n 3p,1b,2c,1e,1f,2j,1k,1l,2m,1p data outputs w 4a write control pin,active when low r 8a read control pin,active when low bw 0 , bw 1, bw 2 , bw 3 7b,7a,5a,5b block write control pin,active when low... |
| Description |
512Kx36 & 1Mx18 QDR II b4 SRAM
QDR SRAM, PBGA165 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165
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| File Size |
377.22K /
20 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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