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| Part No. |
APTM120DA30CT1G
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| OCR Text |
... v gs = 0v t j = 125c 500 a r ds(on) drain ? source on resistance v gs = 10v, i d = 25a 300 360 m v gs(th) gate thre...s 80 nc f = 1mhz, v r = 200v 192 c total capacitance f = 1mhz, v r = 400v 138 pf... |
| Description |
MOSFET SiC chopper diode
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| File Size |
190.64K /
5 Page |
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it Online |
Download Datasheet
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Microsemi Corporation
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| Part No. |
APTGT50TL601G
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| OCR Text |
...00
200
300 400 VCE (V)
500
600
700
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1 The...s products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,5... |
| Description |
Three level inverter Trench Field Stop IGBT Power Module
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| File Size |
223.00K /
7 Page |
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it Online |
Download Datasheet
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Microsemi Corporation
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| Part No. |
APTGF100DA120T1G
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| OCR Text |
...1055 5240 Min 1200 VR=1200V 100 500 3 V Min Typ 3.2 3.9 5.5 Max 250 3.7 6.5 600 Unit A V V nA
4.5
Dynamic Characteristics
Symbol Char...s products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,5... |
| Description |
Boost chopper NPT IGBT Power Module
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| File Size |
273.91K /
5 Page |
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it Online |
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Microsemi Corporation
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| Part No. |
APTC80H15T1G
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| OCR Text |
...ff (J)
Eon
2000 1500 1000 500 0 0
Eon Eon Eoff
Eoff
5 10 15 20 Gate Resistance (Ohms)
25
Operating Frequency vs Drain C...s products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,5... |
| Description |
Full - Bridge Super Junction MOSFET Power Module
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| File Size |
320.29K /
6 Page |
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it Online |
Download Datasheet
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Microsemi Corporation
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| Part No. |
APTC80A15T1G
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| OCR Text |
...ff (J)
Eon
2000 1500 1000 500 0 0
Eon Eon Eoff
Eoff
5 10 15 20 Gate Resistance (Ohms)
25
Operating Frequency vs Drain C...s products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,5... |
| Description |
Phase leg Super Junction MOSFET Power Module
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| File Size |
318.18K /
6 Page |
View
it Online |
Download Datasheet
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