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524 288 Datasheet PDF File

For 524 288 Found Datasheets File :: 1866 Search Time::1.546ms
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				BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor]
Part No.	BS62LV4001TI BS62LV4001 BS62LV4001DC BS62LV4001DI BS62LV4001EC BS62LV4001EI BS62LV4001PC BS62LV4001PI BS62LV4001SC BS62LV4001SI BS62LV4001STC BS62LV4001STI BS62LV4001TC
OCR Text	...ndom Access Memory organized as 524,288 words by 8 bits and operates from a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with maximum access time o...
Description	Low Power/Voltage CMOS SRAM 512K X 8 bit 低功电压CMOS SRAM的为512k × 8
File Size	338.80K / 11 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	HY29F800
OCR Text	...ized as 1,048,576 (1M) bytes or 524,288 (512K) words. The device is offered in industry-standard 44-pin PSOP and 48-pin TSOP packages. The HY29F800 can be programmed and erased in-system with a single 5-volt VCC supply. Internally generated...
Description	8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
File Size	441.16K / 40 Page	View it Online	Download Datasheet

				ETC[ETC] Samsung semiconductor
Part No.	KM416S1120D KM416S1120DT-G_F10 KM416S1120DT-G_F6 KM416S1120DT-G_F7 KM416S1120DT-G_F8 KM416S1120DT-G_FC KM416S1120DT-GF10 KM416S1120DT-GF6 KM416S1120DT-GF7 KM416S1120DT-GF8 KM416S1120DT-GFC KM416S1120DT-G/F7 KM416S1120DT-G/FC KM416S1120DT-G/F10 KM416S1120DT-G/F8
OCR Text	...te Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock c...
Description	512K x 16bit x 2 Banks Synchronous DRAM LVTTL
File Size	1,126.95K / 43 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TC55V4000ST-70 TC55V4000ST-85
OCR Text	524,288-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55V4000ST is a 4,194,304-bit static random access memory (SRAM) organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates ...
Description	524,288-WORD BY 8-BIT FULL CMOS STATIC RAM 524,288-WORD BY 8-BIT STATIC RAM
File Size	157.46K / 10 Page	View it Online	Download Datasheet

				AMD[Advanced Micro Devices]
Part No.	AM29SL800B AM29SL800BB170EC AM29SL800BB170ECB AM29SL800BB170EI AM29SL800BB170EIB AM29SL800BB170FC AM29SL800BB170FCB AM29SL800BB170FI AM29SL800BB170FIB AM29SL800BB170WBC AM29SL800BB170WBCB AM29SL800BB170WBI AM29SL800BB170WBIB AM29SL800BB200EC AM29SL800BB200ECB AM29SL800BB200EI AM29SL800BB200EIB AM29SL800BB200FC AM29SL800BB200FCB AM29SL800BB200FI AM29SL800BB200FIB AM29SL800BB200WBC AM29SL800BB200WBCB AM29SL800BB200WBI AM29SL800BB200WBIB AM29SL800BT170EC AM29SL800BT170ECB AM29SL800BT170EI AM29SL800BT170EIB AM29SL800BT170FC AM29SL800BT170FCB AM29SL800BT170FI AM29SL800BT170FIB AM29SL800BT170WBC AM29SL800BT170WBCB AM29SL800BT170WBI AM29SL800BT170WBIB AM29SL800BT200EC AM29SL800BT200ECB AM29SL800BT200EI AM29SL800BT200EIB AM29SL800BT200FC AM29SL800BT200FCB AM29SL800BT200FI AM29SL800BT200FIB AM29SL800BT200WBC AM29SL800BT200WBCB AM29SL800BT200WBI AM29SL800BT200WBIB
OCR Text	...organized as 1,048,576 bytes or 524,288 words. The device is offered in 48-pin TSOP and 48ball FBGA packages. The word-wide data (x16) appears on DQ15-DQ0; the byte-wide (x8) data appears on DQ7-DQ0. This device is designed to be programmed...
Description	8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
File Size	270.72K / 41 Page	View it Online	Download Datasheet

				AMD[Advanced Micro Devices]
Part No.	AM29SL800C AM29SL800CB100EC AM29SL800CB100ECB AM29SL800CB100EI AM29SL800CB100EIB AM29SL800CB100FC AM29SL800CB100FCB AM29SL800CB100FI AM29SL800CB100FIB AM29SL800CB100WBC AM29SL800CB100WBCB AM29SL800CB100WBI AM29SL800CB100WBIB AM29SL800CB120EC AM29SL800CB120ECB AM29SL800CB120EI AM29SL800CB120EIB AM29SL800CB120FC AM29SL800CB120FCB AM29SL800CB120FI AM29SL800CB120FIB AM29SL800CB120WBC AM29SL800CB120WBCB AM29SL800CB120WBI AM29SL800CB120WBIB AM29SL800CB150EC AM29SL800CB150ECB AM29SL800CB150EI AM29SL800CB150EIB AM29SL800CB150FC AM29SL800CB150FCB AM29SL800CB150FI AM29SL800CB150FIB AM29SL800CB150WBC AM29SL800CB150WBCB AM29SL800CB150WBI AM29SL800CB150WBIB AM29SL800CT100ECB AM29SL800CT100EI AM29SL800CT100EIB AM29SL800CT100FC AM29SL800CT100FCB AM29SL800CT100FI AM29SL800CT100FIB AM29SL800CT100WBC AM29SL800CT100WBCB AM29SL800CT100WBI AM29SL800CT100WBIB AM29SL800CT120EC AM29SL800CT120ECB AM29SL800CT150WBIB AM29SL800CT100EC AM29SL800CT120EI AM29SL800CT120EIB AM29SL800CT120FC AM29SL800CT120FCB AM29SL800CT120FI AM29SL800CT120FIB AM29SL800CT120WBC AM29SL800CT120WBCB AM29SL800CT120WBI AM29SL800CT120WBIB AM29SL800CT150EC AM29SL800CT150ECB AM29SL800CT150EI AM29SL800CT150EIB AM29SL800CT150FC AM29SL800CT15
OCR Text	...organized as 1,048,576 bytes or 524,288 words. The device is offered in 48-pin TSOP and 48ball FBGA packages. The word-wide data (x16) appears on DQ15-DQ0; the byte-wide (x8) data appears on DQ7-DQ0. This device is designed to be programmed...
Description	8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
File Size	275.95K / 41 Page	View it Online	Download Datasheet

				Atmel, Corp. Atmel Corp. ATMEL[ATMEL Corporation]
Part No.	AT49F4096A AT49F4096A-55RC AT49F4096A-55TC AT49F4096A-70RC AT49F4096A-70RI AT49F4096A-70TC AT49F4096A-70TI AT49F4096A-90RC AT49F4096A-90RI AT49F4096A-90TC AT49F4096A-90TI AT49F4096AT AT49F4096AT-55RC AT49F4096AT-55TC AT49F4096AT-70RC AT49F4096AT-70RI AT49F4096AT-70TC AT49F4096AT-70TI AT49F4096AT-90RC AT49F4096AT-90RI AT49F4096AT-90TC AT49F4096AT-90TI AT49F004 AT49F004T-90TI AT49F004T-90TC AT49F004T-70TI AT49F004T-70TC AT49F004T-55TC AT49F004T AT49F004-90TI AT49F004-90TC AT49F004-70TI AT49F004-55TC AT49F004-70TC
OCR Text	...bit Flash Memories organized as 524,288 words of 8 bits each or 256K words of 16 bits each. Manufactured with Atmel's advanced nonvolatile CMOS technology, the devices offer access times to 55 ns with power dissipation of just 275 mW. When ...
Description	Quadruple 2-Input Exclusive-OR Gates 14-TSSOP -40 to 85 256K X 16 FLASH 5V PROM, 90 ns, PDSO44 4-Megabit CMOS Flash Memory 4兆位的CMOS闪存 Quadruple 2-Input Exclusive-OR Gates 14-TSSOP -40 to 85 256K X 16 FLASH 5V PROM, 70 ns, PDSO48 Quadruple 2-Input Exclusive-OR Gates 14-SOIC -40 to 85 256K X 16 FLASH 5V PROM, 70 ns, PDSO48 Quadruple 2-Input Exclusive-OR Gates 14-TVSOP -40 to 85 256K X 16 FLASH 5V PROM, 70 ns, PDSO44 4-Megabit 512K x 8/ 256K x 16 CMOS Flash Memory 256K X 16 FLASH 5V PROM, 70 ns, PDSO40 4-Megabit 512K x 8/ 256K x 16 CMOS Flash Memory 256K X 16 FLASH 5V PROM, 55 ns, PDSO40 Quadruple 2-Input Exclusive-OR Gates 14-TSSOP -40 to 85 256K X 16 FLASH 5V PROM, 55 ns, PDSO48 LM4866 Boomer ® Audio Power Amplifier Series 2.2W Stereo Audio Amplifier; Package: TSSOP; No of Pins: 20 LM4865 Boomer ® Audio Power Amplifier Series 750 mW Audio Power Amplifier with DC Volume Control and Headphone Switch; Package: SOIC NARROW; No of Pins: 8 LM4865 Boomer ® Audio Power Amplifier Series 750 mW Audio Power Amplifier with DC Volume Control and Headphone Switch; Package: MINI SOIC; No of Pins: 8 Quadruple 2-Input Exclusive-OR Gates 14-SO -40 to 85 LM4866 Boomer ® Audio Power Amplifier Series 2.2W Stereo Audio Amplifier; Package: LLP; No of Pins: 24
File Size	242.97K / 15 Page	View it Online	Download Datasheet

				BSI[Brilliance Semiconductor] BRILLIANCE SEMICONDUCTOR, INC. Diotec Semiconductor AG
Part No.	BS62LV4005TI BS62LV4005STC BS62LV4005STI BS62LV4005 BS62LV4005EC BS62LV4005EI BS62LV4005PC BS62LV4005PI BS62LV4005SC BS62LV4005SI BS62LV4005TC
OCR Text	...ndom Access Memory organized as 524,288 words by 8 bits and operates from a wide range of 4.5V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with maximum access time o...
Description	Low Power/Voltage CMOS SRAM 512K X 8 bit 低功电压CMOS SRAM的为512k × 8
File Size	326.09K / 11 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9F2808Q0B K9F2808Q0B-D K9F2808Q0B-DCB0 K9F2808Q0B-DIB0 K9F2808U0B-D K9F2808U0B-DCB0 K9F2808U0B-DIB0 K9F2808U0B-V K9F2808U0B-VCB0 K9F2808U0B-VIB0 K9F2808U0B-Y K9F2808U0B-YCB0 K9F2808U0B-YIB0 K9F2808Q0C K9F2808Q0C-DCB0
OCR Text	... Flash Memory with a spare 512K(524,288)x8bit. The device is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528-byte page in typ...
Description	16M x 8 Bit / 8M x 16 Bit NAND Flash Memory 16M x 8 Bit NAND Flash Memory
File Size	302.44K / 29 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9F2808U0M- K9F2808U0M-YCB0 K9F2808U0M-YIB0
OCR Text	... Flash Memory with a spare 512K(524,288)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528-byte page in typically 200s and an erase operation can be p...
Description	16M x 8 Bit NAND Flash Memory
File Size	344.24K / 26 Page	View it Online	Download Datasheet

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