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IRF[International Rectifier]
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| Part No. |
GB25XF120K
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| OCR Text |
...ARE
f = 1Mhz TJ = 150C, IC = 80a RG = 10, VGE = +15V to 0V TJ = 150C
CT2 14 CT3
SCSOA Irr
Short Circuit Safe Operating Area Peak...400v 600V
Capacitance (pF)
1000
10
Coes
VGE (V)
8 6
100
Cres
4 2
10 0 ... |
| Description |
From old datasheet system
IGBT 6PACK MODULE
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| File Size |
212.48K /
11 Page |
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it Online |
Download Datasheet
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IRF[International Rectifier]
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| Part No. |
HFA120MD40D
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| OCR Text |
... 160 240 TJ = 125C Fig. 5 IF = 80a 9.3 17 TJ = 25C See A 15 30 TJ = 125C Fig. 6 VR = 200V 420 1100 TJ = 25C See nC 1200 3200 TJ = 125C Fig. 7 dif/dt = 200A/s 360 TJ = 25C See A/s 260 TJ = 125C Fig. 8
80.01 (3.150) 40.26 (1.585) ... |
| Description |
Ultrafast, Soft Recovery Diode
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| File Size |
224.05K /
5 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
HFA160MD40D
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| OCR Text |
...st Conditions
I R = 100A I F = 80a See Fig. 1 I F = 160A I F = 80a, TJ = 125C VR = VR Rated See Fig. 2 TJ = 125C, VR = 320V See Fig. 3 VR = 200V From top of terminal hole to mounting plane
IRM CT LS
Max Reverse Leakage Current Juncti... |
| Description |
Ultrafast, Soft Recovery Diode
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| File Size |
228.08K /
5 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
HFA80NC40CSL
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| OCR Text |
...R = 400v VF(typ.) = 1V IF(AV) = 80a Qrr (typ.) = 200nC IRRM(typ.) = 6A trr(typ.) = 30ns di(rec)M/dt (typ.) = 190A/s
Description
HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An e... |
| Description |
Ultrafast, Soft Recovery Diode
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| File Size |
191.40K /
5 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
HFA80NC40CSM
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| OCR Text |
...R = 400v VF(typ.) = 1V IF(AV) = 80a Qrr (typ.) = 200nC IRRM(typ.) = 6A trr(typ.) = 30ns di(rec)M/dt (typ.) = 190A/s
Description
HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An e... |
| Description |
Ultrafast, Soft Recovery Diode
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| File Size |
168.97K /
5 Page |
View
it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
HFA80NK40C
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| OCR Text |
...R = 400v VF(typ.) = 1V IF(AV) = 80a Qrr (typ.) = 200nC IRRM(typ.) = 6A trr(typ.) = 30ns di(rec)M/dt (typ.) = 190A/s
Description
HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An e... |
| Description |
Ultrafast, Soft Recovery Diode
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| File Size |
206.00K /
5 Page |
View
it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
IRG4PC60U-P
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| OCR Text |
...-to Emitter Voltage (V)
IC = 80a
2.0
IC = 40A IC = 20A
1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
T C , Case Temperature (C)...400v Ic = 40V IC = 40A
16
VGE, Gate-to-Emitter Voltage (V)
C, Capacitance (pF)
6000
1... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC Solder Plate package
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| File Size |
119.66K /
8 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
IRG4PC60U
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| OCR Text |
...-to Emitter Voltage (V)
IC = 80a
2.0
IC = 40A IC = 20A
1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
T C , Case Temperature (C)...400v Ic = 40V IC = 40A
16
VGE, Gate-to-Emitter Voltage (V)
C, Capacitance (pF)
6000
1... |
| Description |
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR
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| File Size |
120.95K /
8 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
IRGPC50S
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| OCR Text |
... 41A VGE = 15V -- 1.9 -- V IC = 80a See Fig. 2, 5 -- 1.5 -- IC = 41A, TJ = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -- -9.3 -- mV/C VCE = VGE, I...400v See Fig. 8 90 VGE = 15V -- TJ = 25C -- ns IC = 41A, VCC = 480V 1400 VGE = 15V, RG = 5.0 700 Ene... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=41A)
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| File Size |
222.68K /
6 Page |
View
it Online |
Download Datasheet |
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