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  885 Datasheet PDF File

For 885 Found Datasheets File :: 2243    Search Time::2.859ms    
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    MRFE6S9205HR3 MRFE6S9205HSR3

Freescale Semiconductor, Inc
Part No. MRFE6S9205HR3 MRFE6S9205HSR3
OCR Text ...DD = 28 Vdc, f1 = 875 MHz, f2 = 885 MHz Two-Tone Measurements, 10 MHz Tone Spacing IRL, INPUT RETURN LOSS (dB) VDD = 28 Vdc, f1 = 875 MHz, f2 = 885 MHz Two-Tone Measurements, 10 MHz Tone Spacing 2100 mA Figure 5. Two - Tone Powe...
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

File Size 401.66K  /  12 Page

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    CD284XY

Jianghai Europe GmbH
Part No. CD284XY
OCR Text ...0 () 7,49 4,30 1,95 1,95 1,33 0,885 0,522 0,356 0,292 0,244 0,244 0,195 0,145 0,105 0,089 0,080 0,072 0,072 0,063 9,34 4,50 2,52 2,10 1,40 1,15 0,537 0,371 0,371 0,252 0,252 0,210 0,168 0,127 0,093 0,079 0,079 0,071 0,064 11,79 6,44 3,79 3,...
Description EC Radial 105°C 2.000 - 10.000h Lifetime Lowest ESR at High Ripple Currents(Radial)

File Size 965.85K  /  5 Page

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    MRF6S19100HR308 MRF6S19100HSR3

Freescale Semiconductor, Inc
FREESCALE SEMICONDUCTOR INC
Freescale Semiconductor...
Part No. MRF6S19100HR308 MRF6S19100HSR3
OCR Text ...88 MHz Channel Bandwidth ACPR @ 885 kHz Offset -- - 51 dBc in 30 kHz Channel Bandwidth * Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW Output Power Features * Characterized with Series Equivalent Large - Signal Impedance P...
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
L BAND, Si, N-CHANNEL, RF POWER, MOSFET

File Size 404.13K  /  11 Page

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    Raltron Electronics
Part No. SY02-HIPL
OCR Text ...1.025 Max 3.465 ----------Vcc-0.885 3.465 3.465 Vcc-0.885 -----3.465 3.465 -----3.465 3.465 ----------Vcc-0.885 -----Vcc-0.885 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 ENABLE TCK TDO REFA IN SEL RESET REFB IN GND FRS Vcc NC ALARM ...
Description SYNCHRONOUS EQUIPMENT CLOCK REGENERATOR

File Size 311.22K  /  5 Page

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    PA0903DG-42

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PREMIER DEVICES, INC.
Part No. PA0903DG-42
OCR Text ...37.5 Watts 20 20 29 -70 Minimum 885 <. 12 >30 >30 20 -75 31 Typical Maximum 920 .30 Absolute Maximum Ratings Parameter Forward Power Reverse Power Operating Temperature Storage Temperature Maximum 100 Watts 60 Watts -40 to +85 C -40 to ...
Description DROP-IN ISO-ATTENUATOR

File Size 59.41K  /  1 Page

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    PA0903DG-42H

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PREMIER DEVICES, INC.
Part No. PA0903DG-42H
OCR Text ...37.5 Watts 20 20 29 -70 Minimum 885 <. 12 >30 >30 20 -75 31 Typical Maximum 920 .30 Absolute Maximum Ratings Parameter Forward Power Reverse Power Operating Temperature Storage Temperature Maximum 100 Watts 60 Watts -40 to +85 C -40 to ...
Description DROP-IN ISO-ATTENUATOR

File Size 91.99K  /  1 Page

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    PA0903DG-41

PREMIER DEVICES, INC.
PDI
Part No. PA0903DG-41
OCR Text ...37.5 Watts 20 20 29 -70 Minimum 885 <. 15 >23 >30 30 -75 31 Typical Maximum 920 .30 Absolute Maximum Ratings Parameter Forward Power Reverse Power Operating Temperature Storage Temperature Maximum 100 Watts 60 Watts -40 to +85 C -40 to ...
Description PA0903DG-41

File Size 57.99K  /  1 Page

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    PA0903DG-41H

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PREMIER DEVICES, INC.
PDI
Part No. PA0903DG-41H
OCR Text ...37.5 Watts 20 20 29 -70 Minimum 885 <. 15 >23 >30 30 -75 31 Typical Maximum 920 .30 Absolute Maximum Ratings Parameter Forward Power Reverse Power Operating Temperature Storage Temperature Maximum 100 Watts 60 Watts -40 to +85 C -40 to ...
Description DROP-IN ISO-ATTENUATOR

File Size 91.68K  /  1 Page

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    MW5IC2030NBR1065 MW5IC2030MBR1 MW5IC2030GMBR1

FREESCALE[Freescale Semiconductor, Inc]
Part No. MW5IC2030NBR1065 MW5IC2030MBR1 MW5IC2030GMBR1
OCR Text ... Drain Efficiency -- 20% ACPR @ 885 kHz Offset -- - 49 dBc in 30 kHz Channel Bandwidth Driver Application * Typical CDMA Performance: VDD = 27 Volts, IDQ1 = 220 mA, IDQ2 = 240 mA, Pout = 1 Watt Avg., Full Frequency Band, IS - 95 CDMA (Pilot...
Description RF LDMOS Wideband Integrated Power Amplifiers

File Size 655.13K  /  20 Page

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