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POWEREX[Powerex Power Semiconductors]
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| Part No. |
CM800DU-12 CM800DU-12H
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| OCR Text |
... IGBTMODTM U-Series Module
800 amperes/600 Volts
A "R" (4 PLACES) E F G H
G2
J
E2 C2E1 E2
B
E
K
E1
L
M
G1
C1
J
"T" (4 PLACES) N "S" (3 PLACES) Q P
D
C
Description: Powerex IGBTMODTM Modules are de... |
| Description |
Dual IGBTMOD 800 amperes/600 Volts
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| File Size |
75.31K /
4 Page |
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it Online |
Download Datasheet
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
PM800HSA12 PM800HSA120
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| OCR Text |
...Module.
Type PM Current Rating amperes 800 VCES Volts (x 10) 120
E
Millimeters 2.54 M8 6.5 26.0 6.5 0.64 5.0 50.0 18.0 14.0 10.0 29....600
13
2.0
2.0
400
1.0
VD = 15V VCIN = 0V Tj = 25C Tj = 125C
1.0
IC = 800A VCIN = ... |
| Description |
FLAT-BASE TYPE INSULATED PACKAGE
USING INTELLIGENT POWER MODULES
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| File Size |
53.67K /
6 Page |
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it Online |
Download Datasheet |
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ON Semi
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| Part No. |
MTD2955E_D ON2491
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| OCR Text |
...red Device
TMOS POWER FET 12 amperes 60 VOLTS RDS(on) = 0.3 OHM
(R)
G CASE 369A-13, Style 2 DPAK S
Symbol VDSS VDGR VGS VGSM ID ...600 400 200 0 10 5 Crss Ciss
VDS = 0
VGS = 0
TJ = 25C
Ciss Coss Crss 0 VGS VDS 5 10 15 2... |
| Description |
TMOS POWER FET 12 amperes 60 VOLTS
From old datasheet system
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| File Size |
208.49K /
10 Page |
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it Online |
Download Datasheet |
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ON Semi
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| Part No. |
MTD2955V_D ON2493
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| OCR Text |
...
MTD2955V
TMOS POWER FET 12 amperes 60 VOLTS RDS(on) = 0.230 OHM
P-Channel Enhancement-Mode Silicon Gate
TM
D
G S CASE 369A-...600 400 200 0 10 Crss Ciss
VDS = 0 V
VGS = 0 V
TJ = 25C
Ciss Coss Crss 5 VGS 0 VDS 5 10 ... |
| Description |
TMOS POWER FET 12 amperes 60 VOLTS
From old datasheet system
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| File Size |
145.17K /
10 Page |
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it Online |
Download Datasheet |
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ON Semi
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| Part No. |
MTP2955E_D ON2572
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| OCR Text |
...red Device
TMOS POWER FET 12 amperes 60 VOLTS RDS(on) = 0.3 OHM
(R)
D
G S
CASE 221A-06, Style 5 TO-220AB
MAXIMUM RATINGS (...600 400 200 0 10 5 Crss
VDS = 0 V
VGS = 0 V
TJ = 25C
Ciss Coss Crss 0 VGS VDS 5 10 15 20... |
| Description |
TMOS POWER FET 12 amperes 60 VOLTS
From old datasheet system
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| File Size |
177.77K /
8 Page |
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it Online |
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http://
ADPOW[Advanced Power Technology]
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| Part No. |
APT1201R5B APT1201R5BVR
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| OCR Text |
...201R5BVR
20 ID, DRAIN CURRENT (amperes) VGS=5.5V, 6V, 7V, 10V &15V 5V 16 ID, DRAIN CURRENT (amperes) 20 VGS=5.5V, 6V, 7V, 10V &15V 5V
16...600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 0
4 4V 0 5 10 1... |
| Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1200V 10A 1.500 Ohm
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| File Size |
63.04K /
4 Page |
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it Online |
Download Datasheet |
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http://
ADPOW[Advanced Power Technology]
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| Part No. |
APT1201R6 APT1201R6B APT1201R6BVR
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| OCR Text |
...201R6BVR
10 ID, DRAIN CURRENT (amperes) VGS=5.5V, 6V, 7V, 10V &15V ID, DRAIN CURRENT (amperes) 10 VGS=5.5V, 6V, 7V, 10V &15V
8
8
6 4.5V 4
6 4.5V 4
2 4V 0 100 200 300 400 500 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2,... |
| Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1200V 8A 1.600 Ohm
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| File Size |
62.51K /
4 Page |
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it Online |
Download Datasheet |
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