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CPH3115 F00021 82C52 MBT22 22002 ER104 62000 120EIB
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    Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-P1758 SFH314FA SFH314FA-3 Q62702-P1668 Q62702-P1675 Q62702-P1755 Q62702-P1756 Q62702-P1757 SFH314 SFH314-2 SFH314-3 SFH314FA-2
OCR Text ...itable for applications from bereich von 460 nm bis 1080 nm (SFH 314) und bei 880 nm (SFH 314 FA) q Hohe Linearitat q 5 mm-Plastikbauform Anwendungen q Computer-Blitzlichtgerate q Lichtschranken fur Gleich- und 460 nm to 1080 nm (SFH...
Description .Neu: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor
From old datasheet system

File Size 44.25K  /  5 Page

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    PMB2201

Siemens Semiconductor Group
Part No. PMB2201
OCR Text ... 08.97 Published by Siemens AG, bereich Halbleiter, MarketingKommunikation, Balanstrae 73, 81541 Munchen (c) Siemens AG 1995. All Rights Reserved. Attention please! As far as patents or other rights of third parties are concerned, liability...
Description Mixer DC - 2.5GHz and Vector Modulator 0.8 - 1.5GHz

File Size 339.68K  /  31 Page

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    SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-P1192 Q62702-P1058 BP103BF BP103B Q62702-P85-S4 BP103B-2 BP103B-3 BP103B-4 BP103BF-2 BP103BF-3 BP103BF-4 Q62702-P1057 Q62702-P85-S2 Q62702-P85-S3
OCR Text ... geeignet fur Anwendungen im bereich von 420 nm bis 1130 nm (BP 103 B) und bei 880 nm (BP 103 BF) q Hohe Linearitat q 5 mm-Plastikbauform im LED-Gehause q Gruppiert lieferbar Anwendungen q Computer-Blitzlichtgerate q Lichtschranken fur G...
Description NPN-Silizium-Fototransistor NEU: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter PHOTO TRANSISTOR DETECTOR
TVS BIDIRECT 600W 9.0V SMB PHOTO TRANSISTOR DETECTOR
NPN-Silizium-Fototransistor NEU: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silizium - Fototransistor东北大学:叩- Silizium - Fototransistor麻省理工Tageslichtsperrfilter
TVS ZENER BIDIRECT 600W 85V SMB
From old datasheet system

File Size 162.77K  /  5 Page

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    Q60215-Y67 BPY64P BPY64

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. Q60215-Y67 BPY64P BPY64
OCR Text ...ell geeignet fur Anwendungen im bereich von 420 nm bis 1060 nm q Kathode = Chipunterseite q Mit feuchtigkeitsabweisender Schutzschicht uberzogen q Weiter Temperaturbereich Anwendungen q fur Me-, Steuer- und Regelzwecke q zur Abtastung von ...
Description SEALED
Silizium-Fotoelement Silicon Photovoltaic Cell
From old datasheet system

File Size 156.18K  /  3 Page

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    INFINEON[Infineon Technologies AG]
Part No. TDA6170X TDA6170 Q67001-A5214
OCR Text ... 07.99 Published by Siemens AG, bereich Halbleiter, MarketingKommunikation, Balanstrae 73, 81541 Munchen (c) Siemens AG 1995. All Rights Reserved. Attention please! As far as patents or other rights of third parties are concerned, liability...
Description Multistandard Sound IF
From old datasheet system
Components for Entertainment Electronics, Satellite Sound IF

File Size 291.57K  /  27 Page

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    Q60215-Y63-S1 BPY63 BPY63P

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. Q60215-Y63-S1 BPY63 BPY63P
OCR Text ...itable for applications from bereich von 400 nm bis 1100 nm q Kathode = Chipunterseite q Mit feuchtigkeitsabweisender Schutzschicht 400 nm to 1100 nm q Cathode = back contact q Coated with a humidity-proof protective uberzogen q ...
Description Silizium-Fotoelement Silicon Photovoltaic Cell
From old datasheet system

File Size 190.66K  /  4 Page

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    SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. SFH216 Q62702-P936
OCR Text ...itable for applications from bereich von 350 nm bis 1100 nm q Kurze Schaltzeit (typ. 5 ns) q Hermetisch dichte Metallbauform (TO-18) Anwendungen q Schneller optischer Empfanger mit groer 350 nm to 1100 nm q Short switching time (typ....
Description From old datasheet system
Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time

File Size 200.97K  /  4 Page

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    KOM2125 Q62702-K0047

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. KOM2125 Q62702-K0047
OCR Text ...itable for applications from bereich von 400 nm bis 1100 nm q Kurze Schaltzeit (typ. 25 ns) q geeignet fur Vapor-Phase Loten und 400 nm to 1100 nm q Short switching time (typ. 25 ns) q Suitable for vapor-phase and IR-reflow IR-Re...
Description NEU: 2fach-Silizium-PIN-Fotodiode in SMT NEW: 2-Chip Silicon PIN Photodiode in SMT

File Size 241.30K  /  4 Page

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    SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-P928 BPX90F BPX90 Q62702-P47
OCR Text ...ell geeignet fur Anwendungen im bereich von 400 nm bis 1100 nm (BPX 90) und bei 950 nm (BPX 90 F) q Hohe Fotoempfindlichkeit q DIL-Plastikbauform mit hoher Packungsdichte Anwendungen q Industrieelektronik q "Messen/Steuern/Regeln" Featu...
Description Silizium-Fotodiode Silicon Photodiode Silizium - Fotodiode硅光电二极管
Silizium-Fotodiode Silicon Photodiode PHOTO DIODE
From old datasheet system

File Size 240.85K  /  5 Page

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    PMB2333

Siemens Semiconductor Group
Part No. PMB2333
OCR Text ... 09.97 Published by Siemens AG, bereich Halbleiter, MarketingKommunikation, Balanstrae 73, 81541 Munchen (c) Siemens AG 1995. All Rights Reserved. Attention please! As far as patents or other rights of third parties are concerned, liability...
Description ICs for Communications

File Size 1,118.05K  /  69 Page

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