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    2SJ552 2SJ552L 2SJ552S 2SJ552L/S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ552 2SJ552L 2SJ552S 2SJ552L/S
OCR Text ....3 0.2 0.1 0.1 0.05 ch - c(t) = s (t) * ch - c ch - c = 1.67 C/W, Tc = 25 C PDM PW T 0.03 0.02 1 lse 0.0 t pu o h 1s D= PW T 0.01 10 100 1m 10 m Pulse Width 100 m PW (S) 1 10 Switching T...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
Power switching MOSFET

File Size 55.15K  /  9 Page

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    2SJ553 2SJ553L 2SJ553S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ553 2SJ553L 2SJ553S
OCR Text ....3 0.2 0.1 0.1 0.05 ch - c(t) = s (t) * ch - c ch - c = 1.67 C/W, Tc = 25 C PDM PW T 0.03 0.02 1 lse 0.0 t pu ho 1s D= PW T 0.01 10 100 1m 10 m 100 m Pulse Width PW (S) 1 10 Switching Time ...
Description Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching

File Size 55.75K  /  9 Page

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    2SJ554

HITACHI[Hitachi Semiconductor]
Part No. 2SJ554
OCR Text ....3 0.2 0.1 0.1 0.05 ch - c(t) = s (t) * ch - c ch - c = 1.25 C/W, Tc = 25 C PDM PW T 0.03 0.02 1 lse 0.0 t pu ho 1s D= PW T 0.01 10 100 1m 10 m 100 m Pulse Width PW (S) 1 10 Switching Time ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 53.62K  /  9 Page

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    2SJ555

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ555
OCR Text ....3 0.2 0.1 0.1 0.05 ch - c(t) = s (t) * ch - c ch - c = 1.0 C/W, Tc = 25 C PDM PW T 0.03 0.02 1 lse 0.0 t pu o h 1s D= PW T 0.01 10 100 1m 10 m Pulse Width 100 m PW (S) 1 10 Switching Ti...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 52.90K  /  9 Page

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    TOSHIBA
Part No. TPC8051-H
OCR Text ...0.06 mj channel temperature t ch 150 c storage temperature range t stg ? 55 to 150 c note: for notes 1 to 4, refer to the next page. using continuously under heavy lo ads (e.g. the application of high temperature/current/voltag...
Description Power MOSFET (N-ch single 60V<VDSS≤150V)

File Size 202.27K  /  7 Page

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    2SJ567

TOSHIBA[Toshiba Semiconductor]
Part No. 2SJ567
OCR Text ... channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 6.25 125 Unit C/W C/W Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: VDD = -50 V, Tch = 25C (initial), L = -25.2 mH, IAR = -2.5 A RG = 25 W...
Description TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (ヰ-MOSV)
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (-MOSV)

File Size 237.21K  /  7 Page

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    2SJ610

TOSHIBA[Toshiba Semiconductor]
Part No. 2SJ610
OCR Text ... channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 6.25 125 Unit C/W C/W Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: VDD = -50 V, Tch = 25C (initial), L = 75 mH, IAR = -2.0 A, RG = 25 W N...
Description Switching Regulator, DC-DC Converter and Motor Drive Applications

File Size 235.74K  /  7 Page

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    2SJ619

Toshiba Corporation
Toshiba Semiconductor
Sanyo Semicon Device
Part No. 2SJ619
OCR Text ...ce, channel to case Symbol Rth (ch-c) Max 1.67 Unit C/W 1 Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: VDD = -25 V, Tch = 25C (initial), L = 1.84 mH, RG = 25 W, IAR = -16 A Note 3: Repetitiv...
Description ZD-3.6V- 1 W
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2MOSV)
Field Effect Transistor Silicon P Channel MOS Type (L2-PI-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications

File Size 216.16K  /  6 Page

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    2SJ620

TOSHIBA[Toshiba Semiconductor]
Part No. 2SJ620
OCR Text ...ce, channel to case Symbol Rth (ch-c) Max 1.0 Unit C/W 1 Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: VDD = -50 V, Tch = 25C (initial), L = 3.56 mH, RG = 25 W, IAR = -18 A Note 3: Repetitive...
Description Field Effect Transistor Silicon P Channel MOS Type (L2-PI-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-ヰ-MOSV)
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2--MOSV)

File Size 221.26K  /  6 Page

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    2SK1083 2SK1083-MR

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FUJI[Fuji Electric]
Part No. 2SK1083 2SK1083-MR
OCR Text ... I I V P T T D D(puls) DR GS D ch stg > Equivalent Circuit Rating 60 8 32 8 20 20 150 -55 ~ +150 Unit V A A A V W C C - Electrical Characteristics (TC=25C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Thresh...
Description N-channel MOS-FET

File Size 182.82K  /  2 Page

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