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SANYO[Sanyo Semicon Device]
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| Part No. |
2SC5414 0640
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| OCR Text |
...s described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, s...247 0.278 0.311 S12 66.1 53.1 44.6 42.2 39.3 35.7 31.0 26.0 20.5 14.4 7.7 | S22 | 0.870 0.691 0.510... |
| Description |
NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Applications
NPN Epitaxial Planar Silicon Transistors
From old datasheet system
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| File Size |
45.87K /
6 Page |
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it Online |
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linear
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| Part No. |
LTC2220-1 2220-1F
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| OCR Text |
...C + 17 ENC - 18 SHDN 19 OE 20 - DO /DB0 21 DO+/DB1 22 D1-/DB2 23 D1+/DB3 24 OGND 25 OVDD 26 D2-/DB4 27 D2+/DB5 28 D3-/DB6 29 D3+/DB7 30 D4-/...247 1.125
350 1.250
22201f
LTC2220-1
POWER REQUIRE E TS
SYMBOL VDD PSHDN PNAP LVDS OUTP... |
| Description |
12-Bit,185Msps ADC
From old datasheet system
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| File Size |
574.08K /
28 Page |
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it Online |
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Linear
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| Part No. |
LTC2220
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| OCR Text |
...C + 17 ENC - 18 SHDN 19 OE 20 - DO /DB0 21 DO+/DB1 22 D1-/DB2 23 D1+/DB3 24 OGND 25 OVDD 26 D2-/DB4 27 D2+/DB5 28 D3-/DB6 29 D3+/DB7 30 D4-/...247 1.125
350 1.250
22201p
LTC2220/LTC2221
The denotes the specifications which apply ove... |
| Description |
12-Bit,170Msps/135Msps ADCs
From old datasheet system
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| File Size |
707.33K /
28 Page |
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it Online |
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MOTOROLA[Motorola, Inc]
ON Semi
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| Part No. |
MTW14N50E_D ON2679 MTW14N50E
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| OCR Text |
...and the transition time (tr,tf) do not exceed 10s. In addition the total power averaged over a complete switching cycle must not exceed (TJ(MAX) - TC)/(RJC). A Power MOSFET designated E-FET can be safely used in switching circuits with uncl... |
| Description |
TMOS POWER FET 14 AMPERES 500 VOLTS RDS(on) = 0.40 OHM
From old datasheet system
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| File Size |
205.45K /
8 Page |
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it Online |
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ON Semi
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| Part No. |
MTW8N60E_D ON2705
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| OCR Text |
...and the transition time (tr,tf) do not exceed 10 s. In addition the total power averaged over a complete switching cycle must not exceed (TJ(MAX) - TC)/(RJC). A Power MOSFET designated E-FET can be safely used in switching circuits with unc... |
| Description |
TMOS POWER FET 8.0 AMPERES 600 VOLTS
From old datasheet system
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| File Size |
225.21K /
8 Page |
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it Online |
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ONSEMI[ON Semiconductor]
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| Part No. |
MGW21N60ED_D ON1926 MGW21N60ED ON1925
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| OCR Text |
...s and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Mot... |
| Description |
IGBT IN TO-47 21 A @ 90 31 A @ 25 600 VOLTS
From old datasheet system
Insulated Gate Bipolar Transistor
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| File Size |
148.64K /
6 Page |
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it Online |
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ON Semi
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| Part No. |
MGW12N120E_D ON1917
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| OCR Text |
...s and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Mot... |
| Description |
IGBT IN TO-47 12 A @ 90 20 A @ 25 1200 VOLTS
From old datasheet system
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| File Size |
110.94K /
6 Page |
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it Online |
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