gs s pdf Datasheet P12 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : CXXXX LA9231 YD3842 LTM4622A MBRS4 150L09CB TA8745EN A1220
	Product Description
	Full Text Search

gs s Datasheet PDF File

For gs s Found Datasheets File :: 33630 Search Time::1.578ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |

				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	2sJ486
OCR Text	...ance R Ds(on) = 0.5 typ. (at V gs = -4V, ID = -100 mA) * 2.5V gate drive devices. * small package (MPAK). Outline MPAK 3 1 D 2 G 1. source 2. Gate 3. Drain s 2sJ486 Absolute Maximum Ratings (Ta = 25C) Item Drain to s...
Description	RELAY-.5AMP-DC-6V/DIODE RoHs Compliant: Yes 硅P通道MOs FET的低FrequencyPower开 silicon P Channel MOs FET Low FrequencyPower switching silicon P-Channel MOs FET
File Size	40.30K / 8 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2sJ496
OCR Text	...te to source Voltage -4 -5 V gs (V) 4 2sJ496 Drain to source saturation Voltage vs. Gate to source Voltage Drain to source saturat...s) static Drain to source on state Resistance vs. Temperature 0.5 Pulse Test 0.4 I D = -5 A -2 A ...
Description	silicon P-Channel MOs FET High speed Power switching
File Size	49.68K / 10 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	2sJ501
OCR Text	...40 -0.0 I D= 5A =-2 ,V gs -10 7 5 3 2 -1.0 7 5 3 2 -0.1 7 5 3 2 I F - VsD Vgs= 0 , 0.3A I D=- =-4V Vgs 75C 25C 0 -...s 10 ms switching Time, sW Time - ns 3 2 100 7 5 3 2 10 7 5 3 2 1.0 3 5 7 -0.1 2 3 5 7 -1.0 2 ...
Description	P-Channel silicon MOsFET Ultrahigh-speed switching Applications
File Size	237.49K / 4 Page	View it Online	Download Datasheet

				Sanyo Electric Co., Ltd. SANYO[Sanyo Semicon Device]
Part No.	2sJ503 2sJ503TP-FA
OCR Text	...C -0.6 -0.8 =-10V I D=-4A,V gs Forward Current, IF - A -1.0 -1.2 -1.4 Case Temperature, Tc- C 10000 7 5 3 2 Diode For...s Drain Current, ID - A 10 100 7 5 3 2 10 7 5 3 2 1.0 7 -0.1 2 3 5 td(off) tf ms ...
Description	TRANsIsTOR \| MOsFET \| P-CHANNEL \| 30V V(BR)Dss \| 4A I(D) \| TO-251VAR 晶体管\| MOsFET的\| P通道\| 30V的五（巴西）直\| 4A条（丁）\|51VAR Low-Power, single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管\| MOsFET的\| P通道\| 30V的五（巴西）直\| 4A条（丁）\|52VAR P-Channel silicon MOsFET DC/DC Converter Applications
File Size	86.59K / 4 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2sJ504
OCR Text	...20 -10 75 C -1 -2 -3 -4 V gs (V) -5 Gate to source Voltage 4 2sJ504 Drain to source saturation Voltage vs. Gate to source Vo...s) static Drain to source on state Resistance vs. Temperature 0.2 Pulse Test 0.16 -10 A 0.12 I D ...
Description	silicon P Channel MOs FET High speed Power switching
File Size	50.21K / 10 Page	View it Online	Download Datasheet

				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	2sJ505 2sJ505L 2sJ505s
OCR Text	... 75 C Tc = -25 C -1 -2 -3 -4 V gs (V) -5 0 Gate to source Voltage 4 2sJ505(L), 2sJ505(s) Drain to source saturation Voltage vs. Gate to source Voltage Drain to source On state Resistance R Ds(on) ( ) -2 Drain to source satura...
Description	silicon P Channel MOs FET High speed Power switching silicon P Channel MOs FET High speed Power switching 硅P通道MOs FET的高速电源开 Power switching MOsFET
File Size	53.43K / 10 Page	View it Online	Download Datasheet

				Renesas Electronics, Corp. HITACHI[Hitachi Semiconductor]
Part No.	2sJ506 2sJ506L 2sJ506s
OCR Text	...ce R Ds(on) = 0.065 typ. (at V gs = -10V, ID = -5A) * Low drive current * High speed switching * 4V gate drive devices. Outline DPAK-2 4 D 4 12 G 3 12 s 3 1. Gate 2. Drain 3. source 4. Drain 2sJ506(L), 2sJ506(s)...
Description	silicon P Channel MOs FET High speed Power switching silicon P Channel MOs FET High speed Power switching 硅P通道MOs FET的高速电源开 Power switching MOsFET
File Size	49.71K / 10 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2sJ517
OCR Text	...nce R Ds(on) = 0.18 typ. (at V gs =-4V, ID =-1A) * Low drive current * High speed switching * 2.5V gate drive devices. Outline UPAK 3 D 2 1 4 G s 1. Gate 2. Drain 3. source 4. Drain 2sJ517 Absolute Maximum Ratin...
Description	silicon P-Channel MOs FET silicon P Channel MOs FET High speed Power switching
File Size	42.79K / 8 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2sJ518
OCR Text	...nce R Ds(on) = 0.35 typ. at (V gs = -10V, ID = -1A) * Low drive current * 4 V gete drive devices * High speed switching Outline UPAK 3 D 2 1 4 G s 1. Gate 2. Drain 3. source 4. Drain 2sJ518 Absolute Maximum Rati...
Description	silicon P-Channel MOs FET silicon P Channel MOs FET High speed Power switching
File Size	46.74K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2sJ526
OCR Text	...te to source Voltage -4 -5 V gs (V) 3 2sJ526 Drain to source saturation Voltage vs. Gate to source Voltage static Drain to source ...s) static Drain to source on state Resistance vs. Temperature 0.5 Pulse Test 0.4 Forward Trans...
Description	silicon P Channel MOs FET High speed Power switching
File Size	50.48K / 9 Page	View it Online	Download Datasheet

For gs s Found Datasheets File :: 33630 Search Time::1.578ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |