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heterojunction Datasheet PDF File

For heterojunction Found Datasheets File :: 1084 Search Time::1.516ms
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				RF Micro Devices, Inc. RFMD[RF Micro Devices]
Part No.	RF2163PCBA RF2163
OCR Text	...on an advanced Gallium Arsenide heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz spread-spectrum transmitters. The device is provided in a 16-pin leadless chip carrier with a...
Description	CAP 33UF 350V ELECT EB SMD 3V的，2.5GHz的线性功率放大器 3V, 2.5GHZ LINEAR POWER AMPLIFIER
File Size	95.93K / 6 Page	View it Online	Download Datasheet

				RFMD[RF Micro Devices]
Part No.	RF5117 RF5117PCBA
OCR Text	...on an advanced Gallium Arsenide heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz WLAN and other spread-spectrum transmitters. The device is provided in a 3mmx3mm, 16-pin, lea...
Description	3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER
File Size	271.94K / 10 Page	View it Online	Download Datasheet

				RF Micro Devices, Inc. RFMD[RF Micro Devices] http://
Part No.	RF2172 RF2172PCBA-H RF2172PCBA-L
OCR Text	...on an advanced Gallium Arsenide heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45GHz Bluetooth applications and frequency hopping/direct sequence spread-spectrum cordless teleph...
Description	ISM BAND 3.6V, 250MW AMP WITH ANALOG GAIN CONTROL ISM频段3.6V的，25万千瓦，与模拟增益控制放大器
File Size	290.91K / 12 Page	View it Online	Download Datasheet

				RF MICRO DEVICES INC http:// RFMD[RF Micro Devices] RF Micro Devices, Inc.
Part No.	RF2377 RF2377-410PCBA RF2377-411PCBA
OCR Text	...on an advanced Gallium Arsenide heterojunction Bipolar Transistor (GaAs HBT) process and is featured in an industry-standard miniature 6-lead plastic SOT package. 1.80 1.40 .50 .35 3.10 2.70 .10 MAX. 4 GENERAL PURPOSE AMPLIFIERS TEX...
Description	PCS/CELLULAR TDMA/CDMA/W-CDMA LINEAR VARIABLE GAIN AMPLIFIER DIODE SCHOTTKY DUAL-DUAL COMMON-CATHODE 30V 200mW 0.38V-vf 200mA-IFM 1mA-IF 0.2uA-IR SOT-363 3K/REEL 个人通讯/蜂窝时分多址/码分多址/的W - CDMA线性可变增益放大器
File Size	122.78K / 8 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. ETC
Part No.	SZA-2044
OCR Text	heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and hig...
Description	From old datasheet system 2.0-2.7 GHz 5V 1W Power Amplifier
File Size	241.88K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FMPA2151
OCR Text	...ty are achieved using our InGaP heterojunction Bipolar Transistor (HBT) technology. Device (4 x 4 x 1.4mm) Z X 21 Y T T 51 Electrical Characteristics1 802.11g (2.4-2.5 GHz) OFDM Modulation (with 176 s burst time, 100 s idle time) 54...
Description	2.4 - 2.5 GHz and 4.9-5.9 GHz Dual Band Linear Power 2.4-2.5 GHz and 4.9-5.9 GHz Dual Band Linear Power Amplifier Module (Preliminary)
File Size	80.55K / 6 Page	View it Online	Download Datasheet

				N.A. OPNEXT[Opnext. Inc.]
Part No.	HE8404SG
OCR Text	heterojunction structure 820 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment. Features * High efficiency and high output power Package Type * HE8404SG: S...
Description	GaAlAs Infrared Emitting Diode
File Size	182.97K / 6 Page	View it Online	Download Datasheet

				hitachi
Part No.	HE8812SG
OCR Text	heterojunction structure 870 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment. Features * High efficiency, high output Absolute Maximum Ratings (TC = 25...
Description	GaAlAs Infrared Emitting Diodes From old datasheet system
File Size	18.10K / 3 Page	View it Online	Download Datasheet

				Hittite Microwave Corpo... 美国讯泰微波有限公司上海代表 HITTITE[Hittite Microwave Corporation]
Part No.	HMC413QS16G -HMC413QS16G
OCR Text	...is a high efficiency GaAs InGaP heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 1.6 and 2.2 GHz. The amplifier is packaged in a low cost, surface mount 16 leaded package with an exposed base for improved ...
Description	Patch Cord; Cable Length:4ft; Approval Categories:Exceeds Category 6 Standards; Color:White; Features:4-Pair 23 AWG UTP modular cord, very small footprint, exceeds Category 6 standards RoHS Compliant: Yes GaAs InGaP HBT MMIC POWER AMPLIFIER 1.6 - 2.2 GHz GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz
File Size	315.76K / 8 Page	View it Online	Download Datasheet

				RF Micro Devices, Inc. RFMD[RF Micro Devices]
Part No.	RF2127PCBA RF2127
OCR Text	...on an advanced Gallium Arsenide heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 1800MHz digital PCS phone transmitters requiring linear amplification operating between 1800MHz and ...
Description	MEDIUM POWER LINEAR AMPLIFIER
File Size	63.00K / 6 Page	View it Online	Download Datasheet

For heterojunction Found Datasheets File :: 1084 Search Time::1.516ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |