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  pg-to263-7 Datasheet PDF File

For pg-to263-7 Found Datasheets File :: 477    Search Time::4.031ms    
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    IPB051NE8NG10 IPI05CNE8NG IPP054NE8NG

Infineon Technologies AG
Part No. IPB051NE8NG10 IPI05CNE8NG IPP054NE8NG
OCR Text ...054NE8N G Package Marking PG-TO263-3 051NE8N PG-TO262-3 05CNE8N PG-TO220-3 054NE8N Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C2) T C=100 C Pulsed d...
Description OptiMOS?? Power-Transistor Features N-channel, normal level 175 掳C operating temperature
OptiMOS? Power-Transistor Features N-channel, normal level 175 °C operating temperature

File Size 496.75K  /  11 Page

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    IPB05CN10NG10

Infineon Technologies AG
Part No. IPB05CN10NG10
OCR Text ...05CN10N G Package Marking PG-TO263-3 05CN10N PG-TO262-3 05CN10N PG-TO220-3 05CN10N Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C2) T C=100 C Pulsed d...
Description OptiMOS鈩? Power-Transistor

File Size 436.25K  /  11 Page

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    IPB065N06LG10

Infineon Technologies AG
Part No. IPB065N06LG10
OCR Text ... Marking Package P-TO263-3-2 PG-TO263-3-2 PP-TO220-3-1 065N06L Marking 063N06L PG-TO220-3-1 063N06L 065N06L Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C1)...
Description
File Size 412.25K  /  10 Page

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    IPB06CN10NG10 IPB06CN10NG IPI06CN10NG IPP06CN10NG

Infineon Technologies AG
Part No. IPB06CN10NG10 IPB06CN10NG IPI06CN10NG IPP06CN10NG
OCR Text ...06CN10N G Package Marking PG-TO263-3 06CN10N PG-TO262-3 06CN10N PG-TO220-3 06CN10N Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C2) T C=100 C Pulsed d...
Description OptiMOS鈩? Power-Transistor

File Size 432.34K  /  11 Page

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    IPB080N06NG10 IPP080N06NG

Infineon Technologies AG
Part No. IPB080N06NG10 IPP080N06NG
OCR Text ... 2010-01-19 IPB080N06N G PG-TO-263 (D-Pak) PG-TO-263 (D-Pak) IPP080N06N G Rev. 1.05 page 8 2010-01-19 IPB080N06N G PG-TO220-3: Outline IPP080N06N G Rev. 1.05 page 9 2010-01-19 IPB080N06N G IPP080N0...
Description OptiMOS Power-Transistor Features Low gate charge for fast switching applications

File Size 413.09K  /  10 Page

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    IPB085N06LG10 IPP085N06LG

Infineon Technologies AG
Part No. IPB085N06LG10 IPP085N06LG
OCR Text ...IPB085N06L G IPP085N06L G PG-TO-263 (D-Pak) Rev. 1.05 page 8 2010-01-19 IPB085N06L G PG-TO220-3: Outline IPP085N06L G Rev. 1.05 page 9 2010-01-19 IPB085N06L G IPP085N06L G Published by Infineon Tech...
Description OptiMOS Power-Transistor Features For fast switching converters and sync. rectification
OptiMOS?/a> Power-Transistor Features For fast switching converters and sync. rectification

File Size 412.34K  /  10 Page

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    IPB08CN10NG10 IPI08CN10NG

Infineon Technologies AG
Part No. IPB08CN10NG10 IPI08CN10NG
OCR Text ...08CN10N G Package Marking PG-TO263-3 08CN10N PG-TO262-3 08CN10N PG-TO220-3 08CN10N Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C T C=100 C Pulsed dra...
Description OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
OptiMOS? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

File Size 406.74K  /  11 Page

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    IPB12CN10NG10 IPB12CN10NG IPD12CN10NG IPI12CN10NG IPP12CN10NG

Infineon Technologies AG
Part No. IPB12CN10NG10 IPB12CN10NG IPD12CN10NG IPI12CN10NG IPP12CN10NG
OCR Text ...12CN10N G Package Marking PG-TO263-3 12CN10N PG-TO252-3 12CN10N PG-TO262-3 12CN10N PG-TO220-3 12CN10N Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 ...
Description OptiMOS鈩? Power-Transistor Features N-channel, normal level Very low on-resistance R DS

File Size 503.58K  /  12 Page

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    IPB80N03S4L-0310 IPI80N03S4L-04 IPP80N03S4L-04

Infineon Technologies AG
Infineon Technologies A...
Part No. IPB80N03S4L-0310 IPI80N03S4L-04 IPP80N03S4L-04
OCR Text ...pliant) * 100% Avalanche tested PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80N03S4L-03 IPI80N03S4L-04 IPP80N03S4L-04 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N03L03 4N03L04 4N03L04 Maximum ratings, at T j=25 C...
Description OptiMOS-T2 Power-Transistor

File Size 159.25K  /  9 Page

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    SGB02N12007 SGB02N120

Infineon Technologies AG
Part No. SGB02N12007 SGB02N120
OCR Text ...hing capability 1 G E PG-TO-263-3-2 * Qualified according to JEDEC for target applications * Pb-free lead plating; RoHS complia...TO263-3-2 Power Semiconductors 9 Rev. 2_3 Jan 07 SGB02N120 i,v diF /dt tr r =tS +tF...
Description Fast IGBT in NPT-technology Lower Eoff compared to previous generation

File Size 433.31K  /  11 Page

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