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For projected Found Datasheets File :: 566    Search Time::2.968ms    
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SILABS[Silicon Laboratories]
Silicon Laboratories, Inc.
Part No. SI532 532AA622M080BG 532AA622M080BGR 532AB622M080BG 532AB622M080BGR 532BA622M080BG 532BA622M080BGR 532BB622M080BG 532BB622M080BGR 532CA622M080BG 532CA622M080BGR 532CB622M080BG 532CB622M080BGR 532DA622M080BG 532DA622M080BGR 532DB622M080BG 532DB622M080BGR 532EA622M080BG 532EA622M080BGR 532EB622M080BG 532EB622M080BGR 532FA622M080BG 532FA622M080BGR 532FB622M080BG 532FB622M080BGR 532GA622M080BG 532GA622M080BGR 532GB622M080BG 532GB622M080BGR 532HA622M080BG 532HA622M080BGR 532HB622M080BG 532HB622M080BGR 532JA622M080BG 532JA622M080BGR 532JB622M080BG 532JB622M080BGR 532KA622M080BG 532KA622M080BGR 532KB622M080BG 532KB622M080BGR
OCR Text ...on page 7. Frequency drift over projected 15 year life ppm Temperature Stability Aging ppm ppm 45 -- 55 % LVPECL: LVDS: CMOS: VDD - 1.3 V (differential) 1.25 V (differential) VDD/2 -- -- 0.27 0.30 -- -...
Description DUAL FREQUENCY XO (10 MHZ TO 1.4 GHZ)

File Size 160.37K  /  10 Page

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SILABS[Silicon Laboratories]
Part No. SI534 534AA622080BG 534AA622080BGR 534AAXXXXXXBG 534AAXXXXXXBGR 534AB622080BG 534AB622080BGR 534ABXXXXXXBG 534ABXXXXXXBGR 534BA622080BG 534BA622080BGR 534BAXXXXXXBG 534BAXXXXXXBGR 534BB622080BG 534BB622080BGR 534BBXXXXXXBG 534BBXXXXXXBGR 534CA622080BG 534CA622080BGR 534CAXXXXXXBG 534CAXXXXXXBGR 534CB622080BG 534CB622080BGR 534CBXXXXXXBG 534CBXXXXXXBGR 534DA622080BG 534DA622080BGR 534DAXXXXXXBG 534DAXXXXXXBGR 534DB622080BG 534DB622080BGR 534DBXXXXXXBG 534DBXXXXXXBGR 534EA622080BG 534EA622080BGR 534EAXXXXXXBG 534EAXXXXXXBGR 534EB622080BG 534EB622080BGR 534EBXXXXXXBG 534EBXXXXXXBGR 534FA622080BG 534FA622080BGR 534FAXXXXXXBG 534FAXXXXXXBGR 534FB622080BG 534FB622080BGR 534FBXXXXXXBG 534FBXXXXXXBGR 534GA622080BG 534GA622080BGR 534GAXXXXXXBG 534GAXXXXXXBGR 534GB622080BG 534GB622080BGR 534GBXXXXXXBG 534GBXXXXXXBGR 534HA622080BG 534HA622080BGR 534HAXXXXXXBG 534HAXXXXXXBGR 534HB622080BG 534HB622080BGR 534HBXXXXXXBG 534HBXXXXXXBGR 534JA622080BG 534JA622080BGR 534JAXXXXXXBG 534JAXXXXXXBGR 534JB622080BG 534JB622080BGR 534JBXXXXXXBG 534JBXXXXXXBGR 534KA622080BG 534KA622080BGR 534KAXXXXXXBG 534KAXXXXXXBGR 534KB622080BG 534KB622080BGR 534KBXXXXXXBG 534KBXXXXXXBGR
OCR Text ...e f/fO Frequency drift over projected 15 year life fa tOSC tFRQ -- -- Both FS[1] and FS[0] changing simultaneously -- Notes: 1. See Section 3. "Ordering Information" on page 6 for further details. 2. Specified at time of ...
Description CRYSTAL OSCILLATOR (XO) (10 MHZ TO 1.4 GHZ)

File Size 181.77K  /  10 Page

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    RCM1990U-A

ROHM[Rohm]
Part No. RCM1990U-A
OCR Text ...xis and the observer's position projected onto the XY-plane. (2) : Angle subtended by observer and the normal Z-Z'axis. (X-axis and Y-axis are positive) (3) Maximum viewing angle : The direction with highest contrast expressed at the time ...
Description 16 X 16 dots large-sized liquid crystal display unit

File Size 147.79K  /  9 Page

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    INTERSIL[Intersil Corporation]
Part No. RURG3060 FN3212
OCR Text ... 6). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 6). RJC = Thermal resistance junction to case. pw = Pulse width. D = Duty cycle. IF = 30A, dIF/dt = 100A/s ...
Description From old datasheet system
30A, 600V Ultrafast Diode

File Size 38.29K  /  3 Page

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    INTERSIL[Intersil Corporation]
Part No. RURP3060 FN2776
OCR Text ... 6). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 6). RJC = Thermal resistance junction to case. pw = Pulse width. D = Duty cycle. IF = 30A, dIF/dt = 100A/s ...
Description From old datasheet system
30A, 600V Ultrafast Diode

File Size 38.14K  /  3 Page

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    K7B403625M

SAMSUNG[Samsung semiconductor]
Part No. K7B403625M
OCR Text ...ssed by the current address are projected to the output pins. Write cycles are also initiated with ADSP(or ADSC) and are differentiated into two kinds of operations; All byte write operation and individual byte write operation. All byte wri...
Description 128Kx36-Bit Synchronous Burst SRAM

File Size 434.95K  /  16 Page

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    K7B803625B DSK7B803625B DS_K7B803625B K7B801825B K7B801825B-QC65 K7B803625B-QC65

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K7B803625B DSK7B803625B DS_K7B803625B K7B801825B K7B801825B-QC65 K7B803625B-QC65
OCR Text ...ssed by the current address are projected to the output pins. Write cycles are also initiated with ADSP(or ADSC) and are differentiated into two kinds of operations; All byte write operation and individual byte write operation. All byte wri...
Description 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
256Kx36 & 512Kx18-Bit Synchronous Burst SRAM

File Size 436.80K  /  19 Page

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    INTERSIL[Intersil Corporation]
Part No. RHRG15120CC FN3686 RHRG15120
OCR Text ... 9). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9). QRR = Reverse recovery charge. CJ = Junction capacitance. RJC = Thermal resistance junction to case. pw...
Description 15A/ 1200V Hyperfast Dual Diode
15A, 1200V Hyperfast Dual Diode
From old datasheet system

File Size 48.79K  /  4 Page

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    INTERSIL[Intersil Corporation]
Part No. RHRG5060 FN3920
OCR Text ... 9). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9). QRR = Reverse recovery charge. CJ = Junction Capacitance. RJC = Thermal resistance junction to case. pw...
Description 50A/ 600V Hyperfast Diode
50A, 600V Hyperfast Diode
From old datasheet system

File Size 47.51K  /  4 Page

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For projected Found Datasheets File :: 566    Search Time::2.968ms    
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