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  qrr Datasheet PDF File

For qrr Found Datasheets File :: 17717    Search Time::3.328ms    
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    FCP20N60 FCPF20N60

Fairchild Semiconductor
Part No. FCP20N60 FCPF20N60
OCR Text ...f) tf Qg Qgs Qgd IS ISM VSD trr qrr Notes: TC = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Conditions VGS = 0V, ID = 250A, TJ = 25C VGS = 0V, ID = 250A, TJ = 150C Min 600 -------- Typ -650 0.6 70...
Description 600V N-Channel SuperFET
600V N-Channel MOSFET

File Size 855.17K  /  10 Page

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    FDS2572 FDS2572NL

FAIRCHILD[Fairchild Semiconductor]
Part No. FDS2572 FDS2572NL
OCR Text ... = 29nC (Typ.), VGS = 10V * Low qrr Body Diode * Maximized efficiency at high frequencies * UIS Rated Applications * * * * DC/DC converters Telecom and Data-Com Distributed Power Architectures 48-volt I/P Half-Bridge/Full-Bridge 24-volt...
Description 150V N-Channel UltraFET Trench MOSFET
150V, 0.047 Ohms, 4.9A, N-Channel UltraFET Trench MOSFET

File Size 271.78K  /  12 Page

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    FDS2582

Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. FDS2582
OCR Text ...= 10V * Low Miller Charge * Low qrr Body Diode * Optimized efficiency at high frequencies * UIS Capability (Single Pulse and Repetitive Pulse) Applications * DC/DC converters and Off-Line UPS * Distributed Power Architectures and VRMs *...
Description Discrete Commercial N-Channel UltraFET TRENCH MOSFET, 150V, 4.5A, 0.060 Ohm @ Vgs = 10V, SO-8 Package
12 AMP MINIATURE POWER RELAY
N-Channel PowerTrench MOSFET 150V/ 4.1A/ 66m
N-Channel PowerTrench MOSFET 150V, 4.1A, 66mз
N-Channel PowerTrench MOSFET 150V, 4.1A, 66m?/a>

File Size 215.08K  /  11 Page

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    FQA34N25

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. FQA34N25
OCR Text ...Maximum Ratings IS ISM VSD trr qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 34 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charg...
Description 250V N-Channel MOSFET 34 A, 250 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 688.01K  /  8 Page

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    FQAF34N25

FAIRCHILD[Fairchild Semiconductor]
Part No. FQAF34N25
OCR Text ...Maximum Ratings IS ISM VSD trr qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 21.7 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Cha...
Description 250V N-Channel MOSFET

File Size 684.75K  /  8 Page

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    FQT4N25

Fairchild Semiconductor, Corp.
Part No. FQT4N25
OCR Text ...Maximum Ratings IS ISM VSD trr qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 0.83 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Cha...
Description 250V N-Channel MOSFET 0.83 A, 250 V, 1.75 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 652.28K  /  8 Page

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    HUF76112SK8 FN4834

INTERSIL[Intersil Corporation]
Part No. HUF76112SK8 FN4834
OCR Text ...me Reverse Recovered Charge trr qrr ISD = 7.5A, dISD/dt = 100A/s ISD = 7.5A, dISD/dt = 100A/s TEST CONDITIONS MIN TYP MAX 1.25 1.00 25 14 UNITS V V ns nC 2 HUF76112SK8 Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 I...
Description From old datasheet system
7.5A, 30V, 0.026 Ohm, N-Channel, Logic Level Power MOSFET

File Size 183.81K  /  12 Page

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    HUF76132SK8 HUF76132SK8T

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. HUF76132SK8 HUF76132SK8T
OCR Text ...me Reverse Recovered Charge trr qrr ISD = 3.3A, dISD/dt = 100A/s ISD = 3.3A, dISD/dt = 100A/s MIN TYP MAX 1.25 1.1 58 87 UNITS V V ns nC Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 12...
Description 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET 11.5 A, 30 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA

File Size 259.00K  /  12 Page

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    ITF86172SK8T

INTERSIL[Intersil Corporation]
Part No. ITF86172SK8T
OCR Text ...Recovered Charge SYMBOL VSD trr qrr ISD = -8.0A ISD = -8.0A, dISD/dt = 100A/s ISD = -8.0A, dISD/dt = 100A/s TEST CONDITIONS MIN TYP -0.8 26 13 MAX UNITS V ns nC 2 ITF86172SK8T Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLI...
Description 10A/ 30V/ 0.016 Ohm/ P-Channel/ Logic Level/ Power MOSFET
10A, 30V, 0.016 Ohm, P-Channel, Logic Level, Power MOSFET
10A 30V 0.016 Ohm P-Channel Logic Level Power MOSFET

File Size 173.61K  /  12 Page

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    ITF86182SK8T

INTERSIL[Intersil Corporation]
Part No. ITF86182SK8T
OCR Text ...Recovered Charge SYMBOL VSD trr qrr ISD = -6.0A ISD = -6.0A, dISD/dt = 100A/s ISD = -6.0A, dISD/dt = 100A/s TEST CONDITIONS MIN TYP -0.8 33 20 MAX UNITS V ns nC 2 ITF86182SK8T Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLI...
Description 11A/ 30V/ 0.0115 Ohm/ P-Channel/ Logic Level/ Power MOSFET
11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET

File Size 172.94K  /  12 Page

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For qrr Found Datasheets File :: 17717    Search Time::3.328ms    
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