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For row column Found Datasheets File :: 14248 Search Time::1.141ms
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				Samsung Electronic
Part No.	M372F32080DJ4-CEDOMODE
OCR Text	...oe2 output enable ras0 - ras3 row address strobe cas0, 1,4,5 column address strobe v cc power(+3.3v) v ss ground nc no connection pde presence detect enable pd1 - 8 presence detect id0 - 1 id bit rsvd reserved use rfu reserved for future...
Description	32M x 72 DRAM DIMM with ECC Using 16M x 4, 4K & 8K Refresh, 3.3V Data Sheet
File Size	486.93K / 20 Page	View it Online	Download Datasheet

				Samsung Electronic
Part No.	K4R271669B
OCR Text	...nd data buses with independent row and column control yield over 95% bus efficiency. the direct rdram's 32 banks support up to four simultaneous transactions. system oriented features for mobile, graphics and communi- cations include p...
Description	Direct RDRAMData Sheet
File Size	314.04K / 20 Page	View it Online	Download Datasheet

				Hitachi Semiconductor
Part No.	HM514100DLS-6 HM514100DLS-7 HM514100DLS-8
OCR Text	...ction a0 to a10 address input row address a0 to a10 column address a0 to a10 refresh address a0 to a9 din data-in dout data-out ras row address strobe cas column address strobe we read/write enable v cc power supply v ss ground nc n...
Description	4,194,304-word x 1-bit dynamic RAM, 60ns 4,194,304-word x 1-bit dynamic RAM, 70ns 4,194,304-word x 1-bit dynamic RAM, 80ns
File Size	223.40K / 27 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4E160411D K4E160412D K4E170411D K4E170412D K4E16704112D K4E160411D-B K4E160412D-B K4E160411D-F K4E160412D-F K4E170411D-B K4E170411D-F K4E170412D-F K4E170412D-B
OCR Text	...of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), a...column Decoder Data out Buffer OE Note) *1 : 2K Refresh SAMSUNG ELECTRONICS CO., LTD. reser...
Description	4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. 4M x 4Bit CMOS Dynamic RAM with Extended Data Out Data Sheet 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.
File Size	254.50K / 21 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4F160411D K4F160412D K4F170411D K4F170412D K4F160411D-B K4F160411D-F K4F160412D-B K4F160412D-F
OCR Text	...of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -60), po...column Decoder Data out Buffer OE Note) *1 : 2K Refresh SAMSUNG ELECTRONICS CO., LTD. reser...
Description	4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
File Size	223.25K / 20 Page	View it Online	Download Datasheet

				Cypress
Part No.	FM28V020-SGTR
OCR Text	...ess latch ce control logic we row decoder a i/o latch & bus driver oe dq 32 k x 8 f-ram array . . . column decoder . . . 14-3 a 2-0 7-0 a 14-0 logic block diagram fm28v020 document number: 001-86204 rev. *d page 2 of 21 contents pinout...
Description	256-Kbit (32 K 8) F-RAM Memory
File Size	314.61K / 21 Page	View it Online	Download Datasheet

				EMC[ELAN Microelectronics Corp]
Part No.	EM91450B EM91450BP EM91450DK EM91450D EM91450AP EM91450 EM91450A EM91450C EM91450CK
OCR Text	...terface (column) Output circuit row/column programming counter HFO HDO RMUTE XMUTE I/O circuit Memory latch & decoder D/A converter DTMF XIN XOUT Oscillator Timing/Control circuit row1 Keyboard interface (row) ...
Description	TONE/PULSE DIALER WITH LCD INTERFACE AND I.P.P. DETECT FUNCTION
File Size	212.25K / 24 Page	View it Online	Download Datasheet

				Hitachi Semiconductor
Part No.	HM514400B HM514400BL HM514400C HM514400CL HM514400CLS-6 HM514400CLS-7 HM514400CLS-8 HM514400BLTT-6 HM514400BLTT-7 HM514400BLTT-8 HM514400CLTT-6 HM514400CLTT-7 HM514400CLTT-8
OCR Text	... address input Data-in/Data-out row address strobe column address strobe Read/Write enable Output enable Power (+5 V) Ground 4 Block Diagram RAS row Driver row Driver RAS Control Circuit 256 k Memory Array Mat 256 k Me...
Description	1,048,576-word x 4-bit dynamic random access memory, 80ns 1,048,576-word x 4-bit dynamic random access memory, 60ns 1/048/576-word X 4-bit Dynamic Random Access Memory 1,048,576-word x 4-bit dynamic random access memory, 70ns
File Size	231.12K / 27 Page	View it Online	Download Datasheet

				EMC[ELAN Microelectronics Corp]
Part No.	HM91710A HM91710B HM91710AP
OCR Text	...OSCI OSCO OSC. DIVIDER row/column PROGRAMMING COUNTER row1 row2 row3 row4 row INTERFACE CKT. D/A CONVERTER INPUT INTERFACE CKT. TONE DIALING SIGNAL OPTION : a]:Flash time: row3 NR NR R R b). HKS row4 NR R NR...
Description	IC,TELEPHONE DIALER,TONE/PULSE,CMOS,DIP,16PIN,PLASTIC TONE/PULSE SWITCHABLE DIALER
File Size	128.41K / 19 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4F151611 K4F151611D K4F151612D K4F171611D K4F171612D K4F151612D-J K4F151611D-T K4F151612D-T K4F171612D-J
OCR Text	...of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-50 or -60), po...column Decoder DQ8 to DQ15 Note) *1 : 1K Refresh SAMSUNG ELECTRONICS CO., LTD. reserves the...
Description	1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle.
File Size	525.70K / 34 Page	View it Online	Download Datasheet

For row column Found Datasheets File :: 14248 Search Time::1.141ms
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