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STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
STK12N06L STK12N05L
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| OCR Text |
...
1
2
3
1
2
3
SOT-82
SOT-194 (option)
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s...307 0.445 0.035 0.030 0.106
DIM.
C
A
F H c1 b b1 e3 e D B
P032A
8/10
STK12N05L/... |
| Description |
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
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| File Size |
179.33K /
10 Page |
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it Online |
Download Datasheet
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IXYS, Corp.
IXYS[IXYS Corporation]
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| Part No. |
IXFN38N100Q2
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| OCR Text |
... 0.25 trr 300 ns
miniBLOC, SOT-227 B (IXFN) E153432 Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight...307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 ... |
| Description |
N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 38 A, 1000 V, N-CHANNEL, Si, POWER, MOSFET
Discrete MOSFETs: HiPerFET Power MOSFETS
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| File Size |
561.81K /
4 Page |
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it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT40M70JVR
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| OCR Text |
...100% Avalanche Tested * Popular SOT-227 Package
G
D
S
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Param...307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.48... |
| Description |
POWER MOS V 400V 53A 0.070 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
69.34K /
4 Page |
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it Online |
Download Datasheet |
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IXYS[IXYS Corporation]
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| Part No. |
IXFN180N15P
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| OCR Text |
... A A A mJ J V/ns W
miniBLOC, SOT-227 B (IXFN) E153432
S G
S D G = Gate S = Source D = Drain
Either Source terminal S can be used a...307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,3... |
| Description |
PolarHT HiPerFET Power MOSFET
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| File Size |
144.38K /
5 Page |
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it Online |
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IXYS[IXYS Corporation]
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| Part No. |
IXFN44N80P
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| OCR Text |
...ns W C C C C V~ V~
miniBLOC, SOT-227 B (IXFN) E153432
S G
S G = Gate S = Source D D = Drain
Either Source terminal S can be used a...307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,3... |
| Description |
PolarHV HiPerFET Power MOSFET
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| File Size |
81.12K /
4 Page |
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it Online |
Download Datasheet |
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IXYS[IXYS Corporation]
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| Part No. |
IXFN48N50Q IXFN44N50Q
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| OCR Text |
...lb.in. Nm/lb.in. g
miniBLOC, SOT-227 B (IXFN) E153432
S G
S D
G = Gate S = Source
D = Drain
Either Source terminal at miniBL...307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 ... |
| Description |
HiPerFET Power MOSFETs Q-Class
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| File Size |
79.52K /
2 Page |
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it Online |
Download Datasheet |
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IXYS[IXYS Corporation]
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| Part No. |
IXGE200N60B
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| OCR Text |
...ter
Features
*Conforms to SOT-227B outline *Isolation voltage 3000 V~ *Very high current, fast switching IGBT *Low VCE(sat)
- for min...307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1
... |
| Description |
HiPerFAST IGBT
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| File Size |
63.64K /
2 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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