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IRF[International Rectifier]
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| Part No. |
35SCGQ030
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| OCR Text |
...ier has been expressly designed to meet the rigorous requirements of hirel environments. It is packaged in the hermeticly isolated to-254aa package. The device's forward voltage drop and reverse leakage current are optimized for the lowest ... |
| Description |
35A 30V Hi-Rel Schottky Common Cathode Diode in a to-254aa package SCHOTTKY RECTIFIER
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| File Size |
45.65K /
4 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
35GQ100
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| OCR Text |
...ier has been expressly designed to meet the rigorous requirements of hi-rel environments. It is packaged in the hermeticly isolated to-254aa package. The device's forward voltage drop and reverse leakage current are optimized for the lowest... |
| Description |
35V 100A Hi-Rel Schottky Discrete Diode in a to-254aa package SCHOTTKY RECTIFIER LED 3MM PRISM BLUE SMD
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| File Size |
46.59K /
4 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
35CGQ100
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| OCR Text |
...ier has been expressly designed to meet the rigorous requirements of hirel environments. It is packaged in the hermetic isolated to-254aa package. The device's forward voltage drop and reverse leakage current are optimized for the lowest po... |
| Description |
35A 100V Hi-Rel Schottky Common Cathode Diode in a to-254aa package SCHOTTKY RECTIFIER
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| File Size |
43.07K /
4 Page |
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it Online |
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IRF[International Rectifier] International Rectifier, Corp.
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| Part No. |
35CGQ045 35CGQ045-15
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| OCR Text |
...ier has been expressly designed to meet the rigorous requirements of hirel environments. It is packaged in the hermetic isolated to-254aa package. The device's forward voltage drop and reverse leakage current are optimized for the lowest po... |
| Description |
35A 45V Hi-Rel Schottky Common Cathode Diode in a to-254aa package SCHOTTKY RECTIFIER 肖特基整流器
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| File Size |
48.02K /
4 Page |
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it Online |
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ST Microelectronics, Inc.
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| Part No. |
STRH40P10FSY3
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| OCR Text |
to-254aa Rad-hard low gate charge STripFETTM Power MOSFET
General features
Type STRH40P10FSY3
VDSS 100V
Low RDS(on) Fast switching Single event effect (SEE) hardned Low total gate charge Light weight 100% avalanche teste... |
| Description |
P-channel 100V - 0.060 Ohm - to-254aa - Rad-hard low gate charge STripFET Power MOSFET
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| File Size |
284.74K /
12 Page |
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it Online |
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| Part No. |
1444
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| OCR Text |
to-254aa)
Product Summary
Part Number
IRFMG50
IRFMG50 1000V, N-CHANNEL
HEXFET MOSFET TECHNOLOGY
(R)
RDS(on)
2.0
ID
5.6A
HEXFET(R) MOSFET technology is the key to International
Rectifier's advanced line of power MOSFET tr... |
| Description |
From old datasheet system
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| File Size |
136.83K /
7 Page |
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it Online |
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MICROSEMI[Microsemi Corporation] Microsemi, Corp.
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| Part No. |
2N7373 2N7372
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| OCR Text |
...MA and 4 V Reverse Bias Similar to 2N5004 and 2N5005 but JEDEC to-254aa Package Leads can be Formed All Terminals Isolated from the Case
Complimentary Power Transistors in Hermetic Isolated to-254aa Packages JAN/TX/TXV/JANS
DESCRIPTIO... |
| Description |
PNP Transistor Complimentary Power Transistors in Hermetic Isolated to-254aa Packages 5 A, 80 V, NPN, Si, POWER TRANSISTOR, to-254aa
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| File Size |
55.47K /
3 Page |
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it Online |
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ST Microelectronics, Inc.
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| Part No. |
STRH80P6FSY3
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| OCR Text |
to-254aa Rad-hard low gate charge STripFETTM Power MOSFET
General features
Type STRH80P6FSY3
VDSS 60V
Low RDS(on) Fast switching Single event effect (SEE) hardned Low total gate charge Light weight 100% avalanche tested ... |
| Description |
P-channel 60V - 0.021 Ohm - to-254aa Rad-hard low gate charge STripFET™ Power MOSFET
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| File Size |
279.65K /
12 Page |
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it Online |
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| Part No. |
1943
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| OCR Text |
...ey provide substantial benefits to a host of high-voltage, high-current applications. The performance of various IGBTs varies greatly with f...254AA
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE PD @ TC ... |
| Description |
From old datasheet system
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| File Size |
541.06K /
8 Page |
View
it Online |
Download Datasheet
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| Part No. |
1944
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| OCR Text |
...ey provide substantial benefits to a host of high-voltage, high-current applications. The performance of various IGBTs varies greatly with f...254AA
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE PD @ TC ... |
| Description |
From old datasheet system
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| File Size |
543.06K /
8 Page |
View
it Online |
Download Datasheet
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