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  vgdo Datasheet PDF File

For vgdo Found Datasheets File :: 363    Search Time::3.047ms    
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    MGF1952A

Mitsubishi Electric Semiconductor
Part No. MGF1952A
OCR Text ...BSOLUTE MAXIMUM RATINGS Symbol vgdo VGSO ID PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Total power dissipation Channel temperature Storage temperature (Ta=25C ) Ratings -8 -8 240 600 125 -65 to +...
Description Microwave Power MES FET (Leadless Ceramic Package)

File Size 147.20K  /  5 Page

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    MGF4934AM

Mitsubishi Electric Semiconductor
Part No. MGF4934AM
OCR Text ...BSOLUTE MAXIMUM RATINGS Symbol vgdo VGSO ID PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Total power dissipation Channel temperature Storage temperature Ratings -4 -4 IDSS 50 125 -55 to +125 (Ta=25C ...
Description SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)

File Size 104.87K  /  5 Page

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    MGFC47A7785

Mitsubishi Electric Semiconductor
Part No. MGFC47A7785
OCR Text ...XIMUM RATINGS Symbol Parameter vgdo Gate to drain voltage VGSO Gate to source voltage IGR Reverse gate current IGF Forward gate current PT Total power dissipation *1 Tch Channel temperature Tstg Storage temperature *1 : Tc=25 deg.C < Ke...
Description 7.7 - 8.5GHz BAND 50W INTERNALLY MATCHED GaAs FET

File Size 193.08K  /  2 Page

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    MGF4953B

Mitsubishi Electric Semiconductor
Part No. MGF4953B
OCR Text ...BSOLUTE MAXIMUM RATINGS Symbol vgdo VGSO ID PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Total power dissipation Channel temperature Storage temperature (Ta=25C ) Ratings -4 -4 60 50 125 -65 to +12...
Description SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package

File Size 116.27K  /  5 Page

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    MGFK44A4045

Mitsubishi Electric Semiconductor
Part No. MGFK44A4045
OCR Text ...XIMUM RATINGS Symbol Parameter vgdo Gate to drain voltage VGSO Gate to source voltage ID Drain current IGR Reverse gate current IGF Forward gate current PT *1 Total power dissipation Tch Channel temperature Tstg Storage temperature *1 : Tc...
Description 14.0-14.5GHz BAND 25W INTERNALLY MATCHED GaAs FET

File Size 353.48K  /  4 Page

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    Mitsubishi Electric Sem...
Part No. MGF1953A
OCR Text ...BSOLUTE MAXIMUM RATINGS Symbol vgdo VGSO ID PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Total power dissipation Channel temperature Storage temperature (Ta=25C ) Ratings -10 -10 400 1 125 -65 to +...
Description Microwave Power MES FET

File Size 140.59K  /  5 Page

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    J110 J108 J109

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. J110 J108 J109
OCR Text ...stem (IEC 134). SYMBOL VDS VGSO vgdo IG Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage gate-drain voltage forward gate current (DC) total power dissipation storage temperature operating junction temperature up to Tamb = 50 ...
Description N-channel silicon junction FETs

File Size 44.99K  /  7 Page

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    2SK168 2SK168E 2SK168D 2SK168F

Hitachi Semiconductor
Hitachi,Ltd.
Part No. 2SK168 2SK168E 2SK168D 2SK168F
OCR Text ...ture Storage temperature Symbol vgdo VGSS IG ID Pch Tch Tstg Ratings -30 -1 10 20 200 150 -55 to +150 Unit V V mA mA mW C C Electrical Characteristics (Ta = 25C) Item Gate to drain breakdown voltage Gate cutoff current Drain current Gat...
Description Silicon N Channel MOS FET
Silicon N-Channel Junction FET
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
TRANSISTOR|JFET|N-CHANNEL|8MA I(DSS)|TO-92
TRANSISTOR|JFET|N-CHANNEL|20MA I(DSS)|TO-92
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated &#181;P Reset 晶体管|场效应| N沟道| 12mA的我(直)|2

File Size 41.41K  /  9 Page

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For vgdo Found Datasheets File :: 363    Search Time::3.047ms    
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