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For w ch Found Datasheets File :: 21916    Search Time::1.297ms    
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    2SK3025 2SK3025TENTATIVE

PANASONIC[Panasonic Semiconductor]
Panasonic Corporation
Part No. 2SK3025 2SK3025TENTATIVE
OCR Text ...a = 25C Internal Connection w C C S G D L = 0.1mH, IL = 30A, 1 pulse s Electrical characteristics (TC = 25C) Parameter Drain to ...ch-c) Rth(ch-a) VDD = 30V, ID = 15A VGS = 10V, RL = 2 Conditions VDS = 50V, VGS = 0 VGS = 20V, VDS =...
Description Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated &#181;P Reset
Silicon N-channel Power F-MOS FET
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset

File Size 23.15K  /  1 Page

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    2SK3026

PANASONIC[Panasonic Semiconductor]
Part No. 2SK3026
OCR Text ...a = 25C Internal Connection w C C S G D L = 0.1mH, IL = 40A, 1 pulse s Electrical characteristics (TC = 25C) Parameter Drain to ...ch-c) Rth(ch-a) VDD = 30V, ID = 20A VGS = 10V, RL = 1.5 Conditions VDS = 50V, VGS = 0 VGS = 20V, VDS...
Description Silicon N-channel Power F-MOS FET

File Size 23.46K  /  1 Page

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    2SK3027

PANASONIC[Panasonic Semiconductor]
Part No. 2SK3027
OCR Text ...a = 25C Internal Connection w C C S G D L = 0.1mH, IL = 50A, 1 pulse s Electrical characteristics (TC = 25C) Parameter Drain to ...ch-c) Rth(ch-a) VDD = 30V, ID = 25A VGS = 10V, RL = 1.2 Conditions VDS = 50V, VGS = 0 VGS = 20V, VDS...
Description Silicon N-channel Power F-MOS FET

File Size 23.49K  /  1 Page

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    2SK3028 2SK3028TENTATIVE

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SK3028 2SK3028TENTATIVE
OCR Text ...a = 25C Internal Connection w C C S G D L = 0.1mH, IL = 100A, 1 pulse s Electrical characteristics (TC = 25C) Parameter Drain to...ch-c) Rth(ch-a) VDD = 30V, ID = 50A VGS = 10V, RL = 0.6 Conditions VDS = 50V, VGS = 0 VGS = 20V, VDS...
Description Silicon N-channel Power F-MOS FET

File Size 24.42K  /  1 Page

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    2SK3029 2SK3022 2SK3029TENTATIVE PANASONICCORPORATION-2SK3029TENTATIVE

Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SK3029 2SK3022 2SK3029TENTATIVE PANASONICCORPORATION-2SK3029TENTATIVE
OCR Text ...a = 25C Internal Connection w C C S G D L = 0.1mH, IL = 5A, 1 pulse s Electrical characteristics (TC = 25C) Parameter Drain to S...ch-c) Rth(ch-a) VDD = 30V, ID = 3A VGS = 10V, RL = 10 Conditions VDS = 80V, VGS = 0 VGS = 20V, VDS =...
Description Silicon N-channel Power F-MOS FET 5000 mA, 100 V, N-chANNEL, Si, SMALL SIGNAL, MOSFET
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset

File Size 23.26K  /  1 Page

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    2SK3299 2SK3299-S 2SK3299-ZJ D14060EJ1V0DS00 2SK3299-ZJ-E2 2SK3299-Z-E1 2SK3299-Z

NEC, Corp.
NEC Corp.
NEC[NEC]
Part No. 2SK3299 2SK3299-S 2SK3299-ZJ D14060EJ1V0DS00 2SK3299-ZJ-E2 2SK3299-Z-E1 2SK3299-Z
OCR Text ... -55 to +150 10 66.7 V V A A w w C C A mJ Total Power Dissipation (TA = 25C) Total Power Dissipation (TC = 25C) channel Temperature St...ch-A) = 83.3 C/w 10 Rth(ch-C) = 1.67 C/w 1 0.1 0.01 10 100 1m 10m 100m ...
Description Switching N-channel power MOS FET industrial use N沟道 开关功率场效应晶体工业
From old datasheet system
N-ch Power MOS FET

File Size 76.83K  /  8 Page

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    2SK740

HITACHI[Hitachi Semiconductor]
Part No. 2SK740
OCR Text ...0 -55 to +150 Unit V V A A A w C C Electrical characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakd...ch-c (t) = S (t) * ch-c ch-c = 2.5C/w, TC = 25C PDM D = Pw T Pw T 1m 10 m Pulse width Pw (s) 100 m 1...
Description Silicon N-channel MOS FET

File Size 46.51K  /  8 Page

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    HN58C256A HN58C256AFP-10 HN58C256AFP-85 HN58C256AP-10 HN58C256AP-85 HN58C256AT-10 HN58C256AT-85 HN58C257AT-10 HN58C257AT

HITACHI[Hitachi Semiconductor]
Part No. HN58C256A HN58C256AFP-10 HN58C256AFP-85 HN58C256AP-10 HN58C256AP-85 HN58C256AT-10 HN58C256AT-85 HN58C257AT-10 HN58C257AT-85
OCR Text ... 20 mw/MHz, (typ) Standby: 110 w (max) * On-chip latches: address, data, CE, OE, wE * Automatic byte write: 10 ms max * Automatic page writ...ch t wS t wH t OES t OEH t DS t DH t wP t Cw t DL t BLC t BL t wC t DB t Dw t RP t RES Min*3 0 50...
Description 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A)

File Size 117.68K  /  25 Page

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    LM311 LM311N LM211D LM211 ON0303 LM311D

ONSEMI[ON Semiconductor]
Motorola, Inc
Motorola Inc
Part No. LM311 LM311N LM211D LM211 ON0303 LM311D
OCR Text ...60 0.45 PD , POwER DISSIPATION (w) 0.90 V , SATURATION VOLTAGE (V) OL 0.90 0.75 0.60 Figure 11. Output Saturation Voltage versus Output Current TA = -55C 0.45 0.30 0.15 0 0 8.0 16 24 32 40 48 56 IO, OUTPUT CURRENT (mA) TA = +25C TA = ...
Description    HIGH PERFORMANCE VOLTAGE COMPARATORS
From old datasheet system

File Size 172.81K  /  8 Page

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