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				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-45171
OCR Text	...rage Temperature Units V V V mA w C C Absolute Maximum[1] +14 -7 -16 IDSS 3.6 175 -65 to +175 Notes: 1. Permanent damage may occur if any o...freq. GHz 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 S11 Mag. .91 .83 .83 .86 .86 ...
Description	2-8 GHz Medium Power Gallium Arsenide FET
File Size	39.13K / 3 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-46101
OCR Text	...rage Temperature Units V V V mA w C C Absolute Maximum[1] +14 -7 -16 IDSS 2.0 175 -65 to +175 Notes: 1. Permanent damage may occur if any o...freq. GHz 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 Mag. .94 .86 .82 .82 .80 .79 ...
Description	2-10 GHz Medium Power Gallium Arsenide FET
File Size	40.16K / 3 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	ATF-46171
OCR Text	...rage Temperature Units V V V mA w C C Absolute Maximum[1] +14 -7 -16 IDSS 2.0 175 -65 to +175 Notes: 1. Permanent damage may occur if any o...freq. GHz 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 S11 Mag. .95 .84 .8...
Description	2-10 GHz Medium Power Gallium Arsenide FET(2-10 GHz 中等功率砷化FET)
File Size	39.26K / 3 Page	View it Online	Download Datasheet

				Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
Part No.	FAN4113 FAN4113IP5 FAN4113IP5X
OCR Text	www.fairchildsemi.com FAN4113 1.2V, 36MHz, Low Power Rail-to-Rail Amplifier Features at +1.2V * * * * * * * * 640A supply current per ...freq. Response, Vs = 1.2V Normalized Magnitude (1dB/div) Vo = 50mVpp G=2 G=1 Applications * * *...
Description	Voltage-Feedback Operational Amplifier From old datasheet system 1.2V, 36MHz, Low Power Rail-to-Rail Amplifier
File Size	148.33K / 10 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FAN4174 GB15RF120K FAN4174IP5X FAN4174IS5X
OCR Text	www.fairchildsemi.com FAN4174 Single, Ultra-Low Cost, Rail-to-Rail I/O, CMOS Amplifier Features at +5V * 200A supply current per ampli...freq. Resp. (Vs = +5V) Normalized Magnitude (1dB/div) G=1 Rf = 0 G=2 Inverting freq. Response (V...
Description	Single, Ultra Low Cost, RRIO CMOS Amplifier Single, Ultra-Low Cost, Rail-to-Rail I/O, CMOS Amplifier
File Size	672.25K / 11 Page	View it Online	Download Datasheet

				http:// HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	INA-03170
OCR Text	...rmal Resistance[2,4]: jc = 150C/w Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25C. 3. Derate at 6....freq. GHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang k 0.05 0.10 0.20 0.40 0.60 0.80 1...
Description	Low Noise/ Cascadable Silicon Bipolar MMIC Amplifier Low Noise, Cascadable Silicon Bipolar MMIC Amplifier
File Size	43.14K / 3 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S280832A K4S280832A-TC_L10 K4S280832A-TC_L80 K4S280832A-TC_L1H K4S280832A-TC_L1L K4S280832A-TC_L75 K4S280832A-TC/L10 K4S280832A-TC/L1H K4S280832A-TC/L1L K4S280832A-TC/L75 K4S280832A-TC/L80
OCR Text	... 1 50 CMOS SDRAM Unit V V C w mA Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended v...
Description	128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
File Size	107.61K / 10 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4S280832C K4S280832C-TC_L75 K4S280832C-TC_L1H K4S280832C-TC_L1L K4S280832C-TC/L1H K4S280832C-TC/L1L K4S280832C-TC/L75 K4S280832C-TL750
OCR Text	... 1 50 CMOS SDRAM Unit V V C w mA Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended v...
Description	16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 4MB x 8Bit x 4 Banks Synchronous DRAM Data Sheet 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
File Size	111.80K / 11 Page	View it Online	Download Datasheet

				Samsung Electronic Samsung semiconductor
Part No.	K4S280832E-TC75 K4S280832E-TL75 K4S281632E-TC60 K4S281632E-TC75 K4S281632E-TL60 K4S281632E-TL75 K4S281632F-TC60 K4S281632F-TC75 K4S281632F-TL60 K4S281632F-TL75 K4S280432E-TC75 K4S280432E-TL75
OCR Text	... 1 50 CMOS SDRAM Unit V V C w mA Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended v...
Description	128Mb F-die SDRAM Specification 128Mb E-die SDRAM Specification
File Size	142.11K / 14 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S280832F-TC75 K4S280832F-TL75 K4S281632F-TC60 K4S281632F-TC75 K4S281632F-TL60 K4S281632F-TL75 TL431CDT K4S280432F-TCL75 K4S280832F-TCL75 K4S280432F-TC75 K4S281632F-TCL60 K4S281632F-TCL75 K4S280432F-TL75
OCR Text	...liminary CMOS SDRAM Unit V V C w mA Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended v...
Description	128Mb F-die SDRAM Specification 128Mb的的F - SDRAM内存芯片规格
File Size	143.50K / 14 Page	View it Online	Download Datasheet

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