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SANYO
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Part No. |
3LP01S
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OCR Text |
...ions
unit : mm 2192
[3LP01S]
0.75 0.6 0 to 0.1
Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.
0.3
3
0.8 1.6
0.2
1
2
0.4
0.5 0.5 1.6
0.4
0.1max
0.1
1 : Gate 2 : Source 3 : Drain
Specifications
... |
Description |
PicoMOSFET Series
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File Size |
28.06K /
4 Page |
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it Online |
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Sony
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Part No. |
3SK165A
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OCR Text |
...uct name classification 3SK165A-0 3SK165A-1
15
22 0.5 7.5 1.2 1.0 25 2.5
ms pF fF dB dB
16
20
IDSS RANK 20 to 55mA 20 to 35mA
Typical Characteristics (Ta = 25C)
ID vs. VDS
50 (VG2S = 1.5V) 40 VG1S = 0V -0.2V 30 -0.4V ... |
Description |
GaAs N-channel Dual Gate MES FET From old datasheet system
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File Size |
52.42K /
5 Page |
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it Online |
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hitachi
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Part No. |
3SK300
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OCR Text |
...ures
* Low noise figure NF = 1.0 dB typ. at f = 200 MHz * High gain PG = 27.6 dB typ. at f = 200 MHz
Outline
3SK300
Absolute Maximum Ratings (Ta = 25C)
Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage ... |
Description |
Silicon NPN Triple Diffused From old datasheet system
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File Size |
56.74K /
9 Page |
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it Online |
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hitachi
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Part No. |
3SK309
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OCR Text |
...MHz) * High power gain (PG = 21.0 dB typ. at f = 900 MHz)
Outline
3SK309
Absolute Maximum Ratings (Ta = 25C)
Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Chan... |
Description |
Silicon NPN Triple Diffused From old datasheet system
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File Size |
69.95K /
10 Page |
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it Online |
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Molex Electronics Ltd.
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Part No. |
47272-0024
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OCR Text |
...rview: displayport description: 0.50mm (.020") pitch displayport* male receptacle, right angle, smt, 0.76m (30") gold (au) plating, 20 circuits, with cover, latch holes, mylar, peg, solder tab o... |
Description |
0.50mm (.020) Pitch DisplayPort* Male Receptacle, Right Angle, SMT, 0.76μm (30μ)Gold (Au) Plating, 20 Circuits, with Cover, Latch Holes, Mylar, Peg, Solder Tab of Shell,without Flange
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File Size |
756.11K /
10 Page |
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it Online |
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hitachi
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Part No. |
4AC12
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OCR Text |
...x -- 36 -- 10 10 30000 -- 1.5 2.0 3.5 V V V Unit V V V A Test conditions I C = 1 mA, IE = 0 I C = 1 A, L = 20 mH, RBE = I E = 5 mA, IC = 0 VCB = 20 V, IE = 0 VCE = 20 V, RBE = VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 2 A*1 I C = 2 A, IB = 2 ... |
Description |
Silicon NPN Triple Diffused From old datasheet system
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File Size |
42.33K /
6 Page |
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it Online |
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Price and Availability
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