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  0.0037 Datasheet PDF File

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    hitachi
Part No. 2SD2323
OCR Text ...p -- -- -- -- -- -- -- -- 1.2 8.0 8.0 Max 420 -- -- 100 -- 1.5 2.0 3.5 -- -- -- V V V s Unit V V V A Test conditions I C = 0.1 mA, IE = 0 I C = 3 A, RBE = , L = 10 mH I E = 50 mA, IC = 0 VCE = 300 V, RBE = VCE = 2 V, IC = 4 A I C = 4 A, IB...
Description Silicon NPN Triple Diffused
From old datasheet system

File Size 34.99K  /  5 Page

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    Matsshita / Panasonic
Part No. 2SD2620J
OCR Text 0.05 -0.03 1.000.05 0.800.05 For low-frequency amplification I Features * High forward current transfer ratio hFE * Low collector to emitter saturation voltage VCE(sat) * High emitter to base voltage VBEO * SS-mini type package 0.12+...
Description Transistors

File Size 51.87K  /  2 Page

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    panasonic
Part No. 2SD2620J
OCR Text 0.05 -0.03 1.000.05 0.800.05 For low-frequency driver amplification Features * High forward current transfer ratio hFE * Low collector to emitter saturation voltage VCE(sat) * High emitter to base voltage VEBO 0.12+0.03 -0.01 3 ...
Description SSMini3-F1

File Size 67.52K  /  3 Page

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    2SD2652

Rohm
Part No. 2SD2652
OCR Text ...dimensions (Units : mm) (1) 0.65 0.65 0.7 0.1Min. 0~0.1 !Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) 200mV At IC = 500mA / IB = 25mA 0.3 (3) 1.25 2.1 0.15 0.2 (2) ...
Description Transistors > Small Signal Bipolar Transistors(up to 0.6W)
General purpose amplification

File Size 61.91K  /  2 Page

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    hitachi
Part No. 2SD667
OCR Text ... PC Tj Tstg 2SD667 120 80 5 1 2 0.9 150 -55 to +150 2SD667A 120 100 5 1 2 0.9 150 -50 to +150 Unit V V V A A W C C Electrical Characteristics (Ta = 25C) 2SD667 Item Collector to base breakdown voltage Collector to emitter breakdown volt...
Description Silicon NPN Triple Diffused
From old datasheet system

File Size 33.90K  /  5 Page

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    Fairchild Semiconductor, Corp.
Matsshita / Panasonic
Part No. 2SD973A 2SD973 2SD0973/2SD0973A2SD973/2SD973A 2SD0973AQ 2SD0973AR 2SD0973AS
OCR Text ... Unit: mm 6.90.1 2.50.1 1.0 2.40.2 2.00.2 3.50.1 G G 1.00.1 Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed cir...
Description TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1A I(C) | SC-71 晶体管|晶体管|叩| 50V五(巴西)总裁| 1A条一(c)|律师- 71
Low-Power, SC70/SOT &#181;P Reset Circuits with Capacitor-Adjustable Reset Timeout Delay 晶体管|晶体管|叩| 50V五(巴西)总裁| 1A条一(c)|律师- 71
2SD0973. 2SD0973A (2SD973. 2SD973A) - NPN Transistor

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    hitachi
Part No. 2SK1317
OCR Text ...Min V(BR)DSS I GSS 1500 -- -- 2.0 -- 0.45 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 9 0.75 990 125 60 17 70 110 60 0.9 1750 Max -- 1 500 4.0 12 -- -- -- -- -- -- -- -- -- -- Unit V A A V S pF pF pF ns ns ns ns V ns I F = 2 A, VGS = 0 I F ...
Description Silicon NPN Triple Diffused
From old datasheet system

File Size 55.35K  /  6 Page

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    Sanyo
Part No. 2SK1691
OCR Text ...ions unit:mm 2093A [2SK1691] 0.9 10.2 4.5 1.3 11.5 1.6 20.9 1.2 11.0 9.4 0.8 8.8 0.4 1 2 3 2.7 2.55 2.55 1 : Gate 2 : Drain 3 : Source SANYO : SMP unit:mm 2090A [2SK1691] 0.8 10.2 4.5 1.3 ...
Description N-Channel Silicon MOSFET

File Size 112.43K  /  4 Page

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    2SK1861

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SK1861
OCR Text ... 50, VGS = 5V Min. 150 1.8 1.0 Typ. Max. 250 10 0.6 0.5 2.0 1.5 12.5 Unit V EA S V /L nC pF VTH VSD AEjc Qg Ciss Crss Coss ton toff 3.6 0.42 0.35 1.5 21 480 50 160 60 120 120 240 ns Copyright & Copy;2003 Shindengen ...
Description 2SK1861
VR Series Power MOSFET

File Size 403.74K  /  10 Page

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    Sanyo
Part No. 2SK1888
OCR Text ...s unit:mm 2063A [2SK1888] 10.0 3.2 3.5 7.2 4.5 2.8 18.1 16.0 5.6 14.0 1.6 1.2 0.75 12 3 2.55 2.4 2.4 0.7 2.55 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Drain-to-Source Voltage Gate-to-So...
Description N-Channel Silicon MOSFET

File Size 93.69K  /  4 Page

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