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  0.0066 Datasheet PDF File

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    2SK2529

Hitachi Semiconductor
Fuji Electric
Part No. 2SK2529
OCR Text ...(BR)GSS I GSS Min 60 20 -- -- 1.0 -- -- Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to dra...
Description SILICON N-CHANNEL MOS FET

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    2SK2687-01

Fuji Electric
Part No. 2SK2687-01
OCR Text ...ed N-channel MOS-FET 30V 0,01 50A 60W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25C), unle...
Description N-CHANNEL MOS-FET

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    SANKEN[Sanken electric]
Part No. 2SK2779
OCR Text ...t d (on) C tr td (off) tf VSD 1.0 12 20 60 75 1630 480 180 20 90 120 55 1.0 1.5 80 95 min 100 Ratings typ max 100 100 2.0 Unit V nA A V S m m pF pF pF ns ns ns ns V ISD = 20A, VGS = 0V I D = 10A, VDD 50V, RL = 5, VGS = 10V, See Figure 2 on ...
Description MOSFET

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    Sanken
Part No. 2SK2779
OCR Text ...t d (on) C tr td (off) tf VSD 1.0 12 20 60 75 1630 480 180 20 90 120 55 1.0 1.5 80 95 min 100 Ratings typ max 100 100 2.0 Unit V nA A V S m m pF pF pF ns ns ns ns V ISD = 20A, VGS = 0V I D = 10A, VDD 50V, RL = 5, VGS = 10V, See Figure 2 on ...
Description MOSFET

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    Renesas
Part No. 2SK2796S 2SK2796L
OCR Text ... * Low on-resistance R DS(on) = 0.12 typ. * 4V gate drive devices. * High speed switching Outline DPAK |1 4 4 D 12 G 3 S 12 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2796(L), 2SK2796(S) Absolute Maximum Ratings (...
Description Transistors>Switching/MOSFETs

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    2SK3530-01MR 2SK3530

FUJI ELECTRIC HOLDINGS CO., LTD.
Part No. 2SK3530-01MR 2SK3530
OCR Text ...therwise specified) min. 800 3.0 --------------------7 --typ. ------------830 100 5 25 7.5 7 --1.0 max. --5.0 50 500 100 1.9 pF --------------1.5 Units V V E A E A nA Items Symbols Test Conditions ID=250uA VGS=0V Drain-Source Breakdown...
Description    Fuji Power MOSFET SuperFAP-G series Target Specification
Fuji Power MOSFET SuperFAP-G series Target Specification 7 A, 800 V, 1.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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    2SK3536

Isahaya Electronics Cor...
Isahaya Electronics Corporation
ETC
Isahaya Electrionics, Corp.
Part No. 2SK3536
OCR Text 0.2 0.2 0.8 :mm FEATURE 1 AES uper-thin flat lead type package. t=0.45mm 2 AEExcellent characteristics transient 3 APPLICATION Electret condenser microphone application TERMINAL CONNECTO Parameter Symbol Unit Ratings V Drain to...
Description    ELECTRET CONDENSER MICROPHONE APPLICATION N CHANNEL JUNCTION TYPE
Electret Condenser N-Channel
ELECTRET CONDENSER MICROPHONE APPLICATION N CHANNEL JUNCTION TYPE 电容式麦克风的应用结型N通道

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    2SK3554 2SK3554-01

Fuji Electric
Part No. 2SK3554 2SK3554-01
OCR Text ...te(G) Source(S) < < < < *1 L=0.67mH, Vcc=48V *2 Tch=150C *3 IF=-ID, -di/dt=50A/s, Vcc=BVDSS, Tch=150C <250V *5 VGS=-30V *4 VDS = Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gat...
Description N-CHANNEL SILICON POWER MOSFET

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    2SK3556-01S 2SK3556 2SK3556-01L 2SK3556-01SJ

Fuji Electric Holdings Co., Ltd.
Part No. 2SK3556-01S 2SK3556 2SK3556-01L 2SK3556-01SJ
OCR Text ...te(G) Source(S) < < < < *1 L=0.67mH, Vcc=48V *2 Tch=150C *3 IF=-ID, -di/dt=50A/s, Vcc=BVDSS, Tch=150C *4 VDS<250V *5 VGS=-30V *6 t=60sec f=60Hz = Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source break...
Description N-CHANNEL SILICON POWER MOSFET 37 A, 250 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 128.84K  /  4 Page

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    2SK3557

Fuji Electric
Sanyo Semicon Device
Part No. 2SK3557
OCR Text ...w noise amplifier. Features 0.5 * * * * Large yfs. Small Ciss. Ultrasmall-sized package permitting 2SK3557applied sets to be made smaller and slimer. Ultralow noise figure. 0.4 3 0.16 0 to 0.1 1 0.95 0.95 2 1.9 2.9 0....
Description LOW-NOISE HF AMPLIFIER APPLICATIONS

File Size 33.98K  /  4 Page

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