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  0.025 Datasheet PDF File

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    DAP202U DAP222T1 DAP222T1G DAP222

ONSEMI[ON Semiconductor]
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Part No. DAP202U DAP222T1 DAP222T1G DAP222
OCR Text ...M IFSM(1) Value 80 80 100 300 2.0 Unit Vdc Vdc mAdc mAdc Adc 1 3 2 MARKING DIAGRAMS P9 SC-75 CASE 463 STYLE 3 Maximum ratings a...025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm inches *For additional infor...
Description Dual Common Anode Switch Diode
Common Anode Silicon Dual Switching Diodes

File Size 54.58K  /  6 Page

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    EMIF01-5250 EMIF01-5250SC5

STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. EMIF01-5250 EMIF01-5250SC5
OCR Text ...pF ns Ipp = 10 A, tp = 2.5 s 0 V bias, VRMS = 30 mV, F = 1 MHz IF = 10 mA, dIF/dt = 20 A/s, RL = 100 , Tj = 25 C 0.55 90 40 2/5 ...025 1.3 0.051 3.6 0.137 1 0.040 mm inch 0.95 0.037 Information furnished is believed to be...
Description EMI FILTER WITH ESD PROTECTION EMI滤波器和ESD保护

File Size 64.81K  /  5 Page

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    ESDA6V1-5W6 ESDA6V1-5W

ST Microelectronics
意法半导
STMicroelectronics N.V.
Part No. ESDA6V1-5W6 ESDA6V1-5W
OCR Text ...tial]/Ppp[Tj initial=25C] 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 1000 Fig. 2: Peak pulse power versus exponential pulse duratio...025 Typ. Q c b Q FOOT PRINT 0.3mm 1mm 2.9mm 1mm 0.35mm MARKING Type ESDA...
Description TRANSIL ARRAY FOR ESD PROTECTION
TRANSIL ARRAY FOR ESD PROTECTION TRANSIL ESD保护阵列

File Size 75.63K  /  9 Page

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    H11D1 H11D2

Motorola Inc
Motorola, Inc.
MOTOROLA[Motorola, Inc]
Part No. H11D1 H11D2
OCR Text ...e (IF = 10 mA) Capacitance (V = 0 V, f = 1 MHz) OUTPUT TRANSISTOR (TA = 25C and IF = 0 unless otherwise noted) Collector-Emitter Dark Curren...025 0.008 0.012 0.006 0.035 0.320 BSC 0.332 0.390 MILLIMETERS MIN MAX 8.13 8.89 6.10 6.60 2.93 5.08 ...
Description 6-Pin DIP Optoisolators High Voltage Transistor Output(300 Volts)

File Size 282.78K  /  6 Page

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    H11G1 H11G3 H11G2

Motorola, Inc.
MOTOROLA[Motorola, Inc]
Part No. H11G1 H11G3 H11G2
OCR Text ...ge IF = 10 mA) Capacitance (V = 0 V, f = 1 MHz) DARLINGTON OUTPUT (TA = 25C and IF = 0 unless otherwise noted) Collector-Emitter Breakdown C...025 0.008 0.012 0.006 0.035 0.320 BSC 0.332 0.390 MILLIMETERS MIN MAX 8.13 8.89 6.10 6.60 2.93 5.08 ...
Description 6-Pin DIP Optoisolators Darlington Output(On-Chip Resistors)

File Size 300.05K  /  6 Page

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    HCF4514 HCF4514B HCF4514BEY HCF4514BF HCF4514BM1 HCF4515B HCF4515BEY HCF4515BF HCF4515BM1 HCC4514B HCC4514BEY HCC4514BF

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
Part No. HCF4514 HCF4514B HCF4514BEY HCF4514BF HCF4514BM1 HCF4515B HCF4515BEY HCF4515BF HCF4515BM1 HCC4514B HCC4514BEY HCC4514BF HCC4514BM1 HCC_HCF4515B HCC_HCF4514B HCC4515BEY HCC4515B HCC4515BF HCC4515BM1
OCR Text ...the strobe transition from 1 to 0. Inhibit control allows all outputs to be placed at 0 (HCC/HCF4514B)or 1 (HCC/HCF4515B) regardless of the ...025 0.018 0.012 MAX. DIM. P043A 8/11 HCC/HCF4514B/4515B Ceramic DIP24 MECHANICAL DATA...
Description AND-OR-invert Gates 14-CDIP -55 to 125
4-Bit Latch/4-to-16 Line Decoder(4位锁存器/4-16线译码器) 4位Latch/4-to-16线译码器4位锁存器/ 4-16线译码器

File Size 259.83K  /  11 Page

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    HY628100A HY628100AG HY628100ALG HY628100ALLG HY628100ALLT1 HY628100ALT1 HY628100AT1 HY628100AG-55 HY628100AG-70

HYNIX[Hynix Semiconductor]
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
Part No. HY628100A HY628100AG HY628100ALG HY628100ALLG HY628100ALLT1 HY628100ALT1 HY628100AT1 HY628100AG-55 HY628100AG-70
OCR Text ...V) (ns) Current(mA) HY628100A 5.0 55/70/85 10 Comment : 50ns is available with 30pF test load. FEATURES * Fully static operation and Tri...025(0.64) 0.021(0.54) 0.008(0.21) 0.004(0.10) 0.020(0.50) BSC 0.011(0.27) 0.007(0.17) Rev.05 /Feb...
Description 128Kx8bit CMOS SRAM, standby current 1 mA, 70ns
128Kx8bit CMOS SRAM, standby current 1 mA, 55ns
128Kx8bit CMOS SRAM 128Kx8bit CMOS SRAM
Circular Connector; No. of Contacts:3; Series:MS27497; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:12; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No 128Kx8bit CMOS SRAM

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    IRF7380

International Rectifier
Part No. IRF7380
OCR Text ...ge Max. 80 20 3.6 2.9 29 2.0 0.02 2.3 -55 to + 150 Units V A W W/C V/ns C Thermal Resistance Parameter RJL RJA Junction-to-...025 BASIC .2284 .0099 .016 0 .2440 .0196 .050 8 1.27 BASIC 0.635 BASIC 5.80 0.25 0.40 0 6.20 0.50...
Description 80V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
High frequency DC-DC converters

File Size 503.95K  /  8 Page

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    IRF7401 IRF7402 IRF7401TR

IRF[International Rectifier]
Part No. IRF7401 IRF7402 IRF7401TR
OCR Text ... 3 6 4 5 RDS(on) = 0.022 T o p V ie w Description Fifth Generation HEXFETs from International Rectifier utilize advanced...025 BASIC .2284 .011 0.16 0 .2440 .019 .050 8 0.72 (.028 ) 8X 1.27 BASIC 0.635 BASIC 5.80 0.28 0...
Description 20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=20V, Rds(on)=0.022ohm)
Power MOSFET(Vdss=20V/ Rds(on)=0.022ohm)

File Size 117.75K  /  9 Page

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    IRF7403 IRF7403TRPBF

IRF[International Rectifier]
Part No. IRF7403 IRF7403TRPBF
OCR Text ... 3 6 4 5 RDS(on) = 0.022 T op V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced p...025 BASIC .2284 .011 0.16 0 .2440 .019 .050 8 1.27 BASIC 0.635 BASIC 5.80 0.28 0.41 0 6.20 0.48 1...
Description Generation V Technology
Power MOSFET

File Size 112.84K  /  9 Page

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