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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K7R321884M K7R323684M K7R323684M-FC16 K7R321884M-FC16
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| OCR Text |
0 dec. 2003 1mx36 & 2mx18 qdr tm ii b4 sram k7r323684m k7r321884m document title 1mx36-bit, 2mx18-bit qdr tm ii b4 sram the attached data...9c,9b,3b,3c,2d,3f,2g,3j,3l,3m,2n 1c,1d,2e,1g,1j,2k,1m,1n,2p data inputs q0-35 11p,10m,11l,11k,10j,11... |
| Description |
1Mx36 & 2Mx18 QDRTM II b4 SRAM
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| File Size |
197.54K /
18 Page |
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| Part No. |
ASMT-Jw32-UUE1
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| OCR Text |
...n millimeters. 2. tolerance is 0.1 mm unless otherwise speci?ed. 3. terminal ?nish: ag plating. 4. corresponding nc (no connection) leads...9c/w 0 100 200 300 400 500 600 700 800 0 20 40 60 80 100 120 140 ambient temperature, t a - c max a... |
| Description |
SINGLE COLOR LED, COOL wHITE, 3.7 mm
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| File Size |
119.64K /
13 Page |
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Integrated Silicon Solution, Inc
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| Part No. |
IS61QDB22M36-250M3 IS61QDB22M36-250M3L IS61QDB22M36-200M3L IS61QDB22M36-300M3 IS61QDB22M36-300M3L IS61QDB24M18-200M3L IS61QDB24M18-300M3 IS61QDB24M18-250M3L IS61QDB24M18-300M3L
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| OCR Text |
...y and 1.5, 1.8V VDDQ, used with 0.75, 0.9V VREF. * HSTL input and output levels. * Registered addresses, write and read controls, byte write...9C, 9B 3B, 3C, 2D, 3F, 2G, 3J, 3L, 3M, 2N 1C, 1D, 2E, 1G, 1J, 2K, 1M, 1N, 2P 11P, 10M, 11L, 11K, 10J... |
| Description |
72 Mb (2M x 36 & 4M x 18) QUAD (Burst of 2) Synchronous SRAMs
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| File Size |
636.00K /
27 Page |
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Samsung semiconductor
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| Part No. |
K7I321884C K7I323684C
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| OCR Text |
... rev. no. 0.0 0.1 0.2 0.3 1.0 1.1 remark advance preliminary preliminary preliminary...9c,1d,9d,10d,1e,2e,9e, 1f,9f,10f,1g,9g,10g,1j,2j,9j,1k,2k,9k 1l,9l,10l,1m,2m,9m,1n,9n,10n,1p,2p,9p n... |
| Description |
1Mx36 & 2Mx18 DDRII CIO b4 SRAM
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| File Size |
414.96K /
18 Page |
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it Online |
Download Datasheet |
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Price and Availability
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