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  128m-bit Datasheet PDF File

For 128m-bit Found Datasheets File :: 1184    Search Time::3.937ms    
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    HY5DU283222AF-2 HY5DU283222AF-25 HY5DU283222AF-33 HY5DU283222AF-4 HY5DU283222AF-5 HY5DU283222AF HY5DU283222AF-22 HY5DU28

HYNIX[Hynix Semiconductor]
Part No. HY5DU283222AF-2 HY5DU283222AF-25 HY5DU283222AF-33 HY5DU283222AF-4 HY5DU283222AF-5 HY5DU283222AF HY5DU283222AF-22 HY5DU283222AF-28 HY5DU283222AF-36
OCR Text 128M(4Mx32) GDDR SDRAM HY5DU283222AF This document is a general product description and is subject to change without notice. Hynix Elect...bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the point-to-point applications ...
Description 128M(8Mx16) GDDR SDRAM
128M(4Mx32) GDDR SDRAM

File Size 348.50K  /  32 Page

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    K9F1G08R0A K9K2G08U1A K9F1G08U0A

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F1G08R0A K9K2G08U1A K9F1G08U0A
OCR Text 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History 1. Initial issue 1. The tADL(Address to Data Loading Time) is added. - tADL Minimum 100ns (Page 11, 23~26) - tADL is the time from the WE risi...
Description 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory

File Size 879.50K  /  37 Page

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    M5M29KE131BVP

Renesas Electronics Corporation
Part No. M5M29KE131BVP
OCR Text ...-pin TSOP(I) for lead free use. 128m-bit Flash memory is a 16,777,216 bytes / 8,388,608 words, single power supply and high performance nonvolatile memory fabricated by CMOS technology for the peripheral circuit and DINOR IV (Divided bit-li...
Description Memory>NOR type Flash Memory
134,217,728-BIT (16,777,216-WORD BY 8-BIT / 8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY Stacked-uMCP (micro Multi Chip Package)

File Size 308.60K  /  33 Page

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    TC58NVG1S8BFT00 TC58NVG1S3BFT00

Toshiba Semiconductor
Part No. TC58NVG1S8BFT00 TC58NVG1S3BFT00
OCR Text 128M x 16 BIT) CMOS NAND E PROM DESCRIPTION The TC58NVG1SxB is a single 3.3 V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes/(1024 + 32) words x 64 page...
Description TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

File Size 308.45K  /  37 Page

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    ELPIDA[Elpida Memory]
Part No. EDE5104GBSA-5A-E EDE5108GBSA-5A-E EDE5104GBSA EDE5108GBSA EDE5104GBSA-4A-E EDE5116GBSA-4A-E EDE5116GBSA EDE5116GBSA-5A-E EDE5108GBSA-4A-E
OCR Text 128M words x 4 bits) EDE5108GBSA (64M words x 8 bits) EDE5116GBSA (32M words x 16 bits) Description The EDE5104GB is a 512M bits DDR-II SD...Bit Organization 04: x4 08: x8 16: x16 Voltage, Interface G: 1.8V, SSTL_18 Lead Free Speed 5A: 533Mb...
Description 512M bits DDR-II SDRAM

File Size 364.16K  /  56 Page

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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. M368L6523CUS-CCC M381L6523CUM-CLCC M368L2923CUN-CLCC M368L3324CUS-CLCC M368L6523CUS M381L2923CUM-CCC
OCR Text ...tion 32M x 64 64M x 64 64M x 72 128M x 64 128M x 72 DDR SDRAM Component Composition 32Mx16 (K4H511638C) * 4EA 64Mx8 (K4H510838C) * 8EA...bit(Data-in/data-out) Pin Name DM0 ~ 7, 8(for ECC) VDD VDDQ VSS VREF VDDSPD SDA SCL SA0 ~ 2 NC Data ...
Description DDR SDRAM Unbuffered Module

File Size 440.61K  /  25 Page

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    NEC, Corp.
NEC Corp.
NEC[NEC]
Part No. MC-4516CD641PS-A80 MC-4516CD641PS MC-4516CD641ES MC-4516CD641ES-A10 MC-4516CD641ES-A80 MC-4516CD641PS-A10
OCR Text ...line DIMM) on which 8 pieces of 128M SDRAM: PD45128163 are assembled. These modules provide high density and large quantities of memory in a...Bit 7 1 0 0 0 0 0 0 0 0 1 1 0 0 0 1 0 0 0 1 0 0 0 0 0 0 1 1 0 0 0 0 0 0 0 0 0 0 0 0 Bit 6 0 0 0 0 0 ...
Description 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM 1,600字,64位同步动态随机存储器模块以便内存

File Size 147.86K  /  16 Page

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    NEC Corp.
NEC[NEC]
Part No. MC-458CB641PS-A80 MC-458CB641PS-A10 MC-458CB641PS MC-458CB641ES MC-458CB641ES-A10 MC-458CB641ES-A80
OCR Text ...line DIMM) on which 4 pieces of 128M SDRAM: PD45128163 are assembled. These modules provide high density and large quantities of memory in a...Bit 7 1 0 0 0 0 0 0 0 0 1 1 0 0 0 1 0 0 0 1 0 0 0 0 0 0 1 1 0 0 0 0 0 0 0 0 0 0 0 0 Bit 6 0 0 0 0 0 ...
Description 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM

File Size 135.12K  /  16 Page

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    Pericom Semiconductor, Corp.
PERICOM[Pericom Semiconductor Corporation]
Pericom Technology
Part No. PI3B16248B PI3B16248 PI3B16248BE
OCR Text ...1 32 33 34 35 36 37 38 39 40 128M DIMM 100 MHz A2 1B3 2B3 A3 GND 1B4 2B4 A4 1B5 2B5 72 128M DIMM 72 100 MHz A...Bit to 48-Bit, Mux/DeMux NanoSwitchTM Maximum Ratings (Above which useful life may be impaired. F...
Description 3.3V, 24-Bit to 48-BitMux/DeMux NanoSwitch 3.3伏,24位的48-BitMux/DeMux NanoSwitch
3.3V 24-Bit to 48-BitMux/DeMux NanoSwitch

File Size 226.03K  /  4 Page

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    UPD23C128040BL UPD23C128040BLGX UPD23C128040BLGX-XXX UPD23C128040BLGY-MJH UPD23C128040BLGY-MKH UPD23C128080BL UPD23C1280

NEC
Part No. UPD23C128040BL UPD23C128040BLGX UPD23C128040BLGX-XXX UPD23C128040BLGY-MJH UPD23C128040BLGY-MKH UPD23C128080BL UPD23C128080BLGX UPD23C128080BLGX-XXX UPD23C128080BLGY-MKH UPD23C128040BLGY-XXX-MJH UPD23C128040BLGY-XXX-MKH UPD23C128080BLGY-XXX-MJH UPD23C128080BLGY-XXX-MKH UPD23C128080BLGY-MJH
OCR Text 128m-bit MASK-PROGRAMMABLE ROM 16M-WORD BY 8-BIT (BYTE MODE) / 8M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE Description The PD23C128040BL and PD23C128080BL are a 134,217,728 bits mask-programmable ROM. The word organization is selecta...
Description 128m-bit MASK-PROGRAMMABLE ROM 16M-WORD BY 8-BIT (BYTE MODE) / 8M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE

File Size 260.86K  /  24 Page

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