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  14.140 Datasheet PDF File

For 14.140 Found Datasheets File :: 68496    Search Time::1.703ms    
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    BSL308C

Infineon Technologies AG
Part No. BSL308C
OCR Text ...1 reverse recovery time p t rr -14-ns q rr - -5.9 - nc reverse recovery charge n t rr - 14.4 - ns q rr - 2.9 - nc v r =-15 v, i f =-2a, d ...140 180 t j [c] r ds(on) [m ? ] 2% 98% 0 40 80 120 -60 -20 20 60 100 140 180 t j [c] r ds(on) [...
Description OptiMOS P3 Optimos 2 Small Signal Transistor

File Size 283.96K  /  13 Page

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    IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR

IRF[International Rectifier]
Part No. IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR
OCR Text ...ts C/W www.irf.com 1 02/14/02 IRF1010ES/IRF1010EL Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS ...140 --- pF = 1.0MHz, See Fig. 5 1180320 mJ IAS = 50A, L = 260H Typ. --- 0.064 --- --- --- --- --...
Description 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?

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    ADPOW[Advanced Power Technology]
Part No. APT30M36JFLL
OCR Text ... 10mS 100 Crss 1 16 14 12 10 8 6 4 2 40 60 80 100 120 140 160 180 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 80 70 60 td(on) and td(off) (ns) V R G IDR, REVERSE DRAIN CURRENT (AMPERES) ...
Description POWER MOS 7 FREDFET

File Size 167.31K  /  5 Page

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    ADPOW[Advanced Power Technology]
Part No. APT30M36JLL_04 APT30M36JLL APT30M36JLL04
OCR Text ... 10mS 100 Crss 1 16 14 12 10 8 6 4 2 40 60 80 100 120 140 160 180 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 80 70 60 td(on) and td(off) (ns) V R G IDR, REVERSE DRAIN CURRENT (AMPERES) ...
Description POWER MOS 7 R MOSFET

File Size 166.73K  /  5 Page

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    IRF1010N

IRF[International Rectifier]
Part No. IRF1010N
OCR Text ... Level and 3V Drive Devices Fig 14. For N-channel HEXFET(R) power MOSFETs www.irf.com 7 IRF1010N Package Outline TO-220AB Dimensi...140) 3X 3X 1 .40 (.0 55) 1 .15 (.0 45) 0.93 (.037) 0.69 (.027) M BAM 3X 0.55 (.022) 0.46...
Description Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)

File Size 154.40K  /  8 Page

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    MICROSEMI[Microsemi Corporation]
Part No. APT32F120J
OCR Text ...VGS, GATE-TO-SOURCE VOLTAGE (V) 14 12 10 8 6 4 2 VDS = 240V VDS = 600V VDS = 960V TJ = 150C 050-8090 100 200 300 400 500 600 700 800 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage 0 0 1.5 1....
Description N-Channel FREDFET

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    MICROSEMI[Microsemi Corporation]
Part No. APT34M120J
OCR Text ...VGS, GATE-TO-SOURCE VOLTAGE (V) 14 12 10 8 6 4 2 VDS = 240V VDS = 600V TJ = 25C VDS = 960V 050-8088 100 200 300 400 500 600 700 800 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage 0 0 1.2 1.0...
Description N-Channel MOSFET

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    0026614050

Molex Electronics Ltd.
Part No. 0026614050
OCR Text ...kts 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Material No 26-60-4020 26-60-4030 26-60-4040 26-60-4050 26-60-4060 26-60-4070 26-60-4080 26-6...140 OVERALL NONE PK-41791-001 Engineer Number A-41791-0002 A-41791-0003 A-41791-0004 A-41791-0005 A-...
Description 3.96mm (.156) Pitch KK Solid Header, Vertical, Friction Lock, 5 Circuits, Gold (Au) Plating

File Size 287.00K  /  11 Page

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    IPB60R520CP

Infineon Technologies AG
Part No. IPB60R520CP
OCR Text ... v gs =10 v, i d =3.8 a, r g =14.7 ? v dd =480 v, i d =3.8 a, v gs =0 to 10 v v gs =0 v, v ds =0 v to 480 v rev. 2.0 page 3 2008-02-15...140 180 t j [c] r ds(on) [ ? ] c 25 c 150 0 4 8 12 16 20 24 0246810 v gs [v] i d [a] 4.5 v 5 v ...
Description CoolMOS Power Transistor

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    IRF1310NL IRF1310NS

IRF[International Rectifier]
Part No. IRF1310NL IRF1310NS
OCR Text ...apacitance Min. 100 --- --- 2.0 14 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.11 --- --- --- --- --- --- --- ---...140 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS =22A, VGS = 0V --- 180 270 ns TJ = 25C, IF = 2...
Description Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

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