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16.388 Datasheet PDF File

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				ADPOW[Advanced Power Technology]
Part No.	APT8065 APT8065AVR
OCR Text	...DURATION 10-4 APT8065AVR 16 VGS=5V, 5.5V, 6V, 7V, 10V & 15V ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 16 VGS=6V, 7V, 10V & 15V 12 4.5V 8 12 VGS=5V & 5.5V 4.5V 8 4 4V 4 4V 0 100 200 300 400 VDS, D...
Description	POWER MOS V 800V 11.5A 0.650 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	60.68K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8067HVR
OCR Text	...DURATION 10-4 APT8067HVR 16 VGS=5V, 5.5V, 6V, 7V, 10V & 15V ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 16 VGS=6V, 7V, 10V & 15V 12 4.5V 8 12 VGS=5V & 5.5V 4.5V 8 4 4V 4 4V 0 100 200 300 400 VDS, D...
Description	POWER MOS V 800V 11.5A 0.670 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	59.92K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8075BVFR
OCR Text	...120 380 200 195 20 100 24 22 70 16 ns nC Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD dv/ dt Characte...
Description	POWER MOS V 800V 12A 0.750 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	69.90K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology]
Part No.	APT8075BVR APT8075
OCR Text	...120 380 200 195 20 100 24 22 70 16 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr Chara...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 800V 12A 0.750 Ohm
File Size	61.94K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8075 APT8075BN APT8090BN
OCR Text	...TION 10-4 APT8075/8090BN 16 ID, DRAIN CURRENT (AMPERES) V =6V &10V GS 16 ID, DRAIN CURRENT (AMPERES) 5.5V V 12 =10V GS 5.5V 5V 8 4.5V 4 4V 0 2 12 4 6 8 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS ...
Description	POWER MOS V 800V 13.0A 0.75 Ohm / 800V 12.0A 0.90 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
File Size	49.95K / 4 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-21186 ATF-21186-STR ATF-21186-TR1
OCR Text	... 1.5 NFO GA 1.0 20 30 20 18 16 GA GA (dB) 2.0 1.5 1.0 NF 0.5 14 12 GA (dB) 30 30 0.5 10 mA 15 mA 20 mA 0 0.1 1 FREQUENCY (GHz) ...388 137 1.5 0.851 -73 9.96 3.149 118 2.0 0.794 -95 9.27 2.906 100 2.5 0.743 -118 8.53 2.671 83 3.0 0...
Description	0.5-6 GHz General Purpose Gallium Arsenide FET
File Size	67.13K / 8 Page	View it Online	Download Datasheet

				Clare Inc Clare Inc. CLARE[Clare, Inc.]
Part No.	CPC1150N CPC1150NTR
OCR Text	...05) .20 .025 (.008 .001) 2.16 MAX. (.085) 2.54 TYP. (.100 TYP.) 4.09 0.20 (0.161 0.008) PC Board Pattern (Top View) 2.54 0.127 (0.100 0.005) 5.66 0.14 (0.223 0.005) 1.448 (0.057) 0.889 (0.035) Tape and Reel Packaging...
Description	4 Pin SOP OptoMOS Relays
File Size	117.93K / 6 Page	View it Online	Download Datasheet

				Altera Corporation
Part No.	EPM3512A
OCR Text	...3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 ...388 389 390 391 392 393 394 395 396 397 398 399 400 401 402 403 404 405 406 407 408 409 410 411 412 ...
Description	EPM3512A Dedicated Pin-Outs EPM3512A Dedicated Pin-Outs
File Size	40.61K / 12 Page	View it Online	Download Datasheet

				Samsung Electronic Samsung semiconductor
Part No.	K4S280832E-TC75 K4S280832E-TL75 K4S281632E-TC60 K4S281632E-TC75 K4S281632E-TL60 K4S281632E-TL75 K4S281632F-TC60 K4S281632F-TC75 K4S281632F-TL60 K4S281632F-TL75 K4S280432E-TC75 K4S280432E-TL75
OCR Text	...8 bits / 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of op...
Description	128Mb F-die SDRAM Specification 128Mb E-die SDRAM Specification
File Size	142.11K / 14 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S280832F-TC75 K4S280832F-TL75 K4S281632F-TC60 K4S281632F-TC75 K4S281632F-TL60 K4S281632F-TL75 TL431CDT K4S280432F-TCL75 K4S280832F-TCL75 K4S280432F-TC75 K4S281632F-TCL60 K4S281632F-TCL75 K4S280432F-TL75
OCR Text	...8 bits / 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of op...
Description	128Mb F-die SDRAM Specification 128Mb的的F - SDRAM内存芯片规格
File Size	143.50K / 14 Page	View it Online	Download Datasheet

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