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Samsung Electronic
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| Part No. |
MR18R16224/8/GAF0
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| OCR Text |
...stalled on bottom side of pcb. (16mx16)*2(4/8/16)pcs rimm tm module based on 256mb a-die, 32s banks,16k/32ms ref, 2.5v (16mx18)*2(4/8/16)pcs rimm tm module based on 288mb a-die, 32s banks,16k/32ms ref, 2.5v
page 2 mr18r1622(4/8/g... |
| Description |
(16Mx16)*2(4/8/16)pcs RIMMModule based on 256Mb A-die Data Sheet
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| File Size |
410.75K /
16 Page |
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Samsung Electronic
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| Part No. |
K4S561633C-RLN
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| OCR Text |
16mx16 revision 0.7 december 2001 sdram 54csp (v dd /v ddq 3.0v/3.0v & 3.3v/3.3v)
k4s561633c-rl(n) rev. 0.7 dec. 2001 cmos sdram re...5v device. ? change vih min. from 0.8xvddq to 0.9xvddq and voh min. from 0.9xvddq to 0.95xvddq. ? ... |
| Description |
4M x 16Bit x 4 Banks Synchronous DRAM in 54CSP Data Sheet
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| File Size |
674.11K /
47 Page |
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Hynix Semiconductor, Inc.
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| Part No. |
HY5DU56422AT HY5DU56422ALT HY5DU561622AT
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| OCR Text |
...)t-x* 32mx8 hy5du561622a(l)t-x* 16mx16 operating frequency grade cl2 cl2.5 remark (cl-trcd-trp) - j 133mhz 166mhz ddr333 (2.5-3-3) - m 133mh...5v ac pulse width with < 5ns of duration. 3. v ref is expected to be equal to 0.5*v ddq of the tr... |
| Description |
64Mx4|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M 64Mx4 |.5V | 8K的|焦九龙/升| DDR SDRAM内存- 256M
16Mx16|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M 16Mx16显示|.5V | 8K的|焦九龙/升| DDR SDRAM内存- 256M
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| File Size |
361.57K /
36 Page |
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it Online |
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ISSI
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| Part No. |
IS46R16160D IS43R16160D IS43R83200D
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| OCR Text |
...ons ? confguration(s): 8mx32, 16mx16, 32mx8 ? package(s): 144 ball bga (x32) 66-pin tsop-ii (x8, x16) and 60 ball bga (x8, x16) ?...5v) v dd 2.3 2.7 v i/o supply voltage (with a nominal vdd of 2.5v) v ddq 2.3 2.7 v i/o reference ... |
| Description |
DDR SDRAM
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| File Size |
1,042.52K /
32 Page |
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it Online |
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Price and Availability
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