Part Number Hot Search : 
SOD1H3U3 2N5321 11610 SKM141C IDT74FCT ATS040 REF01CZ BA60BC0T
Product Description
Full Text Search
  23m Datasheet PDF File

For 23m Found Datasheets File :: 272    Search Time::1.141ms    
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |   

    Mitsubishi Electric Corporation
Part No. FY6ACJ-03A
OCR Text .................................. 23m ? i d ........................................................................................... 6a 5.0 0.4 1.27 1.8 max. 6.0 4.4 ?? ?? ???? source gate drain ? ? ? ? ? ? ?? ? ? ?? sep. 2001 v (br) d...
Description Power MOSFETs: FY Series

File Size 62.17K  /  4 Page

View it Online

Download Datasheet





    SUMIDA CORP
Part No. CDRH6D38 CDRH6D38-3R3NB
OCR Text ...0 950m 850m 750m 700m 650m 31m( 23m) 2.30 27m( 20m) 2.50 20m( 15m) 3.50 D.C.R.( ) : Max.(Typ.) Temperature Rise Rated Current (A) * 4 Measuring Freq. (L) / L CDRH6D38 10 kHz Tolerance of Inductance / CDRH6D38 3.3 H - 100 H 30%(N)...
Description 1 ELEMENT, 3.3 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD

File Size 214.10K  /  1 Page

View it Online

Download Datasheet

    SSF2316E

Silikron Semiconductor Co.,LTD.
Part No. SSF2316E
OCR Text ...< 24m ? @ v gs =4v r ds(on) < 23m ? @ v gs =4.5v esd rating 2000v hbm high power and current handing capability lead free product is acquired surface mount package application battery protection load switch power m...
Description Battery protection

File Size 259.57K  /  5 Page

View it Online

Download Datasheet

    ELM34814AA-N

ELM Technology Corporation
Part No. ELM34814AA-N
OCR Text ... vds=30v ? id=7a ? rds(on) < 23m (vgs=10v) ? rds(on) < 30m (vgs=4.5v) dual n-channel mosfet s 1 d1 s 2 d2 g2 g1 4 - pin configuration circuit pin no. pin name 1 source1 2 gate1 3 source2 4 gate2 5 drain2 6 drain2 7 drain1 8 drain1 4 3 ...
Description Dual N-channel MOSFET

File Size 336.95K  /  4 Page

View it Online

Download Datasheet

    FS50AS-03

Renesas Electronics Corporation
Part No. FS50AS-03
OCR Text .................................. 23m w i d ......................................................................................... 50a integrated fast recovery diode (typ.) ............. 60ns feb.1999 mitsubishi nch power mosfet fs50as...
Description MITSUBISHI Nch POWER MOSFET

File Size 74.53K  /  5 Page

View it Online

Download Datasheet

    CDRCH12D78BHF-331MC CDRCH12D78BHF-330MC CDRCH12D78BHF-150MC CDRCH12D78BHF-151MC CDRCH12D78BHF-470MC CDRCH12D78BHF-471MC

Sumida Corporation
Part No. CDRCH12D78BHF-331MC CDRCH12D78BHF-330MC CDRCH12D78BHF-150MC CDRCH12D78BHF-151MC CDRCH12D78BHF-470MC CDRCH12D78BHF-471MC CDRCH12D78BHF-4R7NC CDRCH12D78BHF-680MC CDRCH12D78BHF-100MC CDRCH12D78BHF-101MC CDRCH12D78BHF-220MC CDRCH12D78BHF-221MC CDRCH12D78BHF-6R8NC CDRCH12D78B12
OCR Text ...mc parallel 5.0(5.6) 12.0(14.2) 23m(18m) 6.830% series 2.6(3.0) 6.0(7.1) 92m(72m) 27.230% dual 3.6(4.1) 12.0(14.2) 46m(36m 6.830% 6r8 cdrch12d78bhf-6r8nc parallel 5.4(6.1) 13.2(15.6) 20m(16m 4.730% series 2.8(3.1) 6.6(7.8) 80m(60m 18.830...
Description SMD Power Inductor

File Size 486.90K  /  7 Page

View it Online

Download Datasheet

    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AON3814
OCR Text ... r ds(on) (at v gs = 3.1v) < 23m w r ds(on) (at v gs = 2.5v) < 24m w esd protected symbol v ds the aon3814 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 1....
Description 20V N-Channel MOSFET

File Size 393.64K  /  5 Page

View it Online

Download Datasheet

    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AON3816
OCR Text 23m w r ds(on) (at v gs = 2.5v) < 28m w esd protected symbol v ds v gs v 1 2 gate-source voltage drain-source voltage 20 the aon3816 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gat...
Description 20V N-Channel MOSFET

File Size 395.45K  /  5 Page

View it Online

Download Datasheet

    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AO9926B
OCR Text ...7.6 a (v gs = 10v) r ds(on) < 23m ? (v gs = 10v) r ds(on) < 26m ? (v gs = 4.5v) r ds(on) < 34m ? (v gs = 2.5v) r ds(on) < 52m ? (v gs = 1.8v) the ao9926b uses advanced trench technology to provide excellent r ds(on) , low gate...
Description Dual N-Channel Enhancement Mode Field Effect Transistor

File Size 194.39K  /  4 Page

View it Online

Download Datasheet

    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AON2400
OCR Text ... r ds(on) (at v gs = 1.2v) < 23m w symbol v ds parameter the aon2400 combines advanced trench mosfet technology with a low resistance package to provide ds(on) . this device is ideal for load switch and battery protection applications. v...
Description 8V N-Channel MOSFET

File Size 290.67K  /  5 Page

View it Online

Download Datasheet

For 23m Found Datasheets File :: 272    Search Time::1.141ms    
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |   

▲Up To Search▲

 




Price and Availability




 
Price & Availability of 23m

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
1.0939409732819