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Mitsubishi Electric Corporation
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Part No. |
FY6ACJ-03A
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OCR Text |
.................................. 23m ? i d ........................................................................................... 6a 5.0 0.4 1.27 1.8 max. 6.0 4.4 ?? ?? ???? source gate drain ? ? ? ? ? ? ?? ? ? ??
sep. 2001 v (br) d... |
Description |
Power MOSFETs: FY Series
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File Size |
62.17K /
4 Page |
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SUMIDA CORP
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Part No. |
CDRH6D38 CDRH6D38-3R3NB
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OCR Text |
...0 950m 850m 750m 700m 650m 31m( 23m) 2.30 27m( 20m) 2.50 20m( 15m) 3.50 D.C.R.( ) : Max.(Typ.) Temperature Rise Rated Current (A) * 4
Measuring Freq. (L) / L CDRH6D38 10 kHz
Tolerance of Inductance / CDRH6D38 3.3 H - 100 H 30%(N)... |
Description |
1 ELEMENT, 3.3 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
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File Size |
214.10K /
1 Page |
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ShenZhen FreesCale Electronics. Co., Ltd
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Part No. |
AON3814
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OCR Text |
... r ds(on) (at v gs = 3.1v) < 23m w r ds(on) (at v gs = 2.5v) < 24m w esd protected symbol v ds the aon3814 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.... |
Description |
20V N-Channel MOSFET
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File Size |
393.64K /
5 Page |
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ShenZhen FreesCale Electronics. Co., Ltd
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Part No. |
AON3816
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OCR Text |
23m w r ds(on) (at v gs = 2.5v) < 28m w esd protected symbol v ds v gs v 1 2 gate-source voltage drain-source voltage 20 the aon3816 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gat... |
Description |
20V N-Channel MOSFET
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File Size |
395.45K /
5 Page |
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ShenZhen FreesCale Electronics. Co., Ltd
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Part No. |
AO9926B
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OCR Text |
...7.6 a (v gs = 10v) r ds(on) < 23m ? (v gs = 10v) r ds(on) < 26m ? (v gs = 4.5v) r ds(on) < 34m ? (v gs = 2.5v) r ds(on) < 52m ? (v gs = 1.8v) the ao9926b uses advanced trench technology to provide excellent r ds(on) , low gate... |
Description |
Dual N-Channel Enhancement Mode Field Effect Transistor
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File Size |
194.39K /
4 Page |
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ShenZhen FreesCale Electronics. Co., Ltd
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Part No. |
AON2400
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OCR Text |
... r ds(on) (at v gs = 1.2v) < 23m w symbol v ds parameter the aon2400 combines advanced trench mosfet technology with a low resistance package to provide ds(on) . this device is ideal for load switch and battery protection applications. v... |
Description |
8V N-Channel MOSFET
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File Size |
290.67K /
5 Page |
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