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SAMSUNG SEMICONDUCTOR CO. LTD.
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Part No. |
KM616U4000C
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OCR Text |
256kx16 bit low power and low voltage cmos static ram revision history revision no 0.0 0.1 0.11 remark advance preliminary history initial draft revised - speed bin change commercial : 70/85ns ? 70/85/100ns industrial : 85/100ns ... |
Description |
256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低电压CMOS 静RAM)
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File Size |
140.45K /
9 Page |
View
it Online |
Download Datasheet |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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Part No. |
KM616U4000B
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OCR Text |
256kx16 bit low power and low voltage cmos static ram revision history revision no. 0.0 0.1 1.0 2.0 3.0 3.01 remark advance preliminary final final final history initial draft revise - die name change ; a to b finalize revise - operating ... |
Description |
256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低电压CMOS 静RAM)
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File Size |
133.48K /
9 Page |
View
it Online |
Download Datasheet |
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Samsung Electronic
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Part No. |
K6T4016V3CK6T4016U3CFAMILY
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OCR Text |
256kx16 bit low power and low voltage cmos static ram revision history revision no 0.0 0.1 0.11 1.0 2.0 remark advance preliminary final final history initial draft revise - speed bin change commercial: 70/85ns ? 70/85/100ns indus... |
Description |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM Data Sheet
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File Size |
153.15K /
9 Page |
View
it Online |
Download Datasheet |
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Electronic Theatre Controls, Inc.
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Part No. |
FM22L16 FM22L16-55-TG
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OCR Text |
...nvolatile ram ? organized as 256kx16 ? configurable as 512kx8 using /ub, /lb ? 10 14 read/write cycles ? nodelay? writes ? p...bit bi-directional data bus for accessing the fram array. /ub input upper byte select: enables dq... |
Description |
4Mbit FRAM Memory
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File Size |
209.12K /
15 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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