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SAMHOP[SamHop Microelectronics Corp.]
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Part No. |
STU404D
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OCR Text |
...VGS = 10V R GE N = 3.3 ohm VDS =28v, ID =8A,VGS =10V VDS =28v, ID =8A,VGS =4.5V Gate-S ource Charge Gate-Drain Charge Qgs Qgd VDS =28v, ID = 8 A VGS =10V
2
ohm
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time R ise Time Turn-Off De... |
Description |
Dual E nhancement Mode Field Effect Transistor (N and P Channel)
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File Size |
915.39K /
11 Page |
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it Online |
Download Datasheet
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Hammond Manufacturing Co.
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Part No. |
1640SE
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OCR Text |
...1.5a 12v @ 3a 164d28 162d28 1.1 28v c.t. @ .04a 14v @ .08a 164e28 162e28 2.4 28v c.t. @ .085a 14v @ .17a 164f28 162f28 6 28v c.t. @ .2a 14v @ .4a 164g28 162g28 12 28v c.t. @ .42a 14v @ .84a 164h28 162h28 20 28v c.t. @ .7a 14v @ 1.4a 164j28 ... |
Description |
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File Size |
319.77K /
2 Page |
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Advanced Power Electronics
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Part No. |
AP4511GH
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OCR Text |
...ge current (t j =150 o c) v ds =28v, v gs =0v - - 25 ua i gss gate-source leakage v gs =20v - - na q g total gate charge 2 i d =8a - 11 18 nc q gs gate-source charge v ds =28v - 3 - nc q gd gate-drain ("miller") charge v gs =4.5v - 6 - nc ... |
Description |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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File Size |
130.21K /
7 Page |
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it Online |
Download Datasheet
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Price and Availability
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