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    2SK1085-M

Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
http://
Part No. 2SK1085-M
OCR Text ...R V GS PD T ch T stg Rating 150 3 12 3 20 20 150 -55 ~ +150 Unit V A A A V W C C > Equivalent Circuit - Electrical Characteristics (TC=25C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero ...
Description N-channel MOS-FET 3 A, 150 V, 1.17 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 177.09K  /  2 Page

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    2SK1088 2SK1088-M

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FUJI[Fuji Electric]
Part No. 2SK1088 2SK1088-M
OCR Text ... N-channel MOS-FET 150V 0,3 9A 35W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - D...ch T stg Rating 150 9 36 9 20 35 150 -55 ~ +150 Unit V A A A V W C C > Equivalent Circuit - El...
Description N-channel MOS-FET

File Size 181.89K  /  2 Page

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    2SK1089

http://
FUJI[Fuji Electric]
Part No. 2SK1089
OCR Text ... RDS(ON) [] 2 ID [A] 3 VDS [V] Tch [C] VGS [V] Typical Drain-Source-On-State-Resistance vs. ID Typical...ch-c) [K/W] Transient Thermal impedance PD [W] 10 ID [A] 12 11 Tc [C] ...
Description N-channel MOS-FET

File Size 198.93K  /  2 Page

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    2SK1098-M

FUJI[Fuji Electric]
Part No. 2SK1098-M
OCR Text ...s rss d(on) r d(off) f SD rr 3 - Thermal Characteristics Item Thermal Resistance Symbol R th(ch-a) R th(ch-c) Test conditions channel to air channel to case Min. Typ. Max. 62,5 4,17 Unit C/W C/W FUJI ELECTRIC Gmb...
Description N-channel MOS-FET

File Size 176.27K  /  2 Page

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    2SK1151 2SK1151L 2SK1151S 2SK1152 2SK1152L 2SK1152S

HITACHI[Hitachi Semiconductor]
Part No. 2SK1151 2SK1151L 2SK1151S 2SK1152 2SK1152L 2SK1152S
OCR Text ...-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 23 2SK1151(L)(S), 2SK1152(L)(S) Absolute Maximum Ratings (Ta = 25C) I...ch-c(t) = S (t) * ch-c ch-c = 6.25C/W, TC = 25C PDM D = PW T 0.03 0.01 ot Pu h 1S lse T 10...
Description    Silicon N-Channel MOS FET
Power switching MOSFET

File Size 47.75K  /  9 Page

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    2SK1153 2SK1154

HITACHI[Hitachi Semiconductor]
Part No. 2SK1153 2SK1154
OCR Text ... TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1153, 2SK1154 Absolute Maximum Ratings (Ta = 25C) Item Dr...ch-c(t) = S (t) * ch-c ch-c = 4.17C/W, TC = 25C PDM D = PW T PW T 100 m 1 10 Switching Time Test ...
Description Silicon N Channel MOS FET
Silicon N-Channel MOS FET

File Size 47.74K  /  9 Page

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    2SK1155 2SK1156

HITACHI[Hitachi Semiconductor]
Part No. 2SK1155 2SK1156
OCR Text ... TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1155, 2SK1156 Absolute Maximum Ratings (Ta = 25C) Item Dr...ch-c (t) = S (t) * ch-c ch-c = 2.50C/W, TC = 25C PDM PW T 1m 10 m Pulse Width PW (s) 100 m 1 D = PW ...
Description Silicon N Channel MOS FET
Silicon N-Channel MOS FET

File Size 48.47K  /  9 Page

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    2SK1157 2SK1158

Hitachi Semiconductor
Part No. 2SK1157 2SK1158
OCR Text ... TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1157, 2SK1158 Absolute Maximum Ratings (Ta = 25C) Item Dr...ch-c (t) = S (t) * ch-c ch-c = 2.08C/W, TC = 25C PDM PW 1 D = PW T 0.01 10 0.01 ulse tP ho 1S...
Description Silicon N-Channel MOS FET

File Size 48.24K  /  9 Page

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    2SK1159 2SK1160

Hitachi Semiconductor
Part No. 2SK1159 2SK1160
OCR Text ... TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1159, 2SK1160 Absolute Maximum Ratings (Ta = 25C) Item Dr...ch-c (t) = S (t) * ch-c ch-c = 2.08C/W, TC = 25C PDM uls e 0.03 D= T 100 1m 10 m Pulse Width...
Description Silicon N-Channel MOS FET

File Size 48.23K  /  9 Page

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    2SK1161 2SK1162

Hitachi Semiconductor
Part No. 2SK1161 2SK1162
OCR Text ... Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1161, 2SK1162 Absolute Maximum Ratings (Ta = 25C) Item Dr...ch-c (t) = S (t) * ch-c ch-c = 1.25C/W, TC = 25C PDM D = PW T 0.03 1S 0.01 10 h ul ot P...
Description Silicon N Channel MOS FET
Silicon N-Channel MOS FET

File Size 33.64K  /  6 Page

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