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IRF[International Rectifier]
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| Part No. |
IRGIB15B60KD1 IRGIB15B60KD1P IRGIB15B60KD1PBF
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| OCR Text |
...6 14 ICE = 7.5A ICE = 15A ICE = 30a 12 10 8 6 4 2 0 5 10 VGE (V) 15 20 5 10 VGE (V) 15 20 ICE = 7.5A ICE = 15A ICE = 30a
12 10 8 6 4 2 0
...400v RG= 22; VGE= 15V
Fig. 14 - Typ. Switching Time vs. IC TJ = 150C; L=1.07mH; VCE= 400v RG= 22;... |
| Description |
600V Low-Vceon Copack IGBT in a TO-220 FullPak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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| File Size |
275.00K /
12 Page |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SGB15N60HS Q67040-S4535
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| OCR Text |
...C, COLLECTOR CURRENT
50A 40A 30a 20A 10A 0A 10Hz
IC, COLLECTOR CURRENT
TC=80C
15s 10A 50s 200s 1A 1ms
TC=110C
Ic
Ic
0,...400v, VGE = 0/+15V, RG = 23)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0,... |
| Description |
High Speed IGBT in NPT-technology
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| File Size |
321.77K /
11 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SGW50N60HS
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| OCR Text |
...SIPATION
80A 70A 60A 50A 40A 30a 20A 10A 0A 25C 75C 125C
250W
150W
50W
TC, CASE TEMPERATURE Figure 3. Power dissipation as a ...400v, VGE=0/15V, RG=6.8, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 10. Typical s... |
| Description |
High Speed IGBT in NPT-technology
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| File Size |
327.64K /
11 Page |
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it Online |
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Infineon Technologies A...
INFINEON[Infineon Technologies AG]
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| Part No. |
IDW100E60
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| OCR Text |
...ORWARD CURRENT
90A
60A
30a
50C
75C
100C
125C
150C
0A 25C
75C
125C
TC, CASE TEMPERATURE Figure 1. Power d...400v, IF=100A, Dynamic test circuit in Figure E)
diF/dt, DIODE CURRENT SLOPE Figure 6. Typical re... |
| Description |
Fast Switching EmCon Diode
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| File Size |
161.76K /
6 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
IHW30N100R
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| OCR Text |
...ns Type IHW30N100R VCE 1000V IC 30a VCE(sat),Tj=25C 1.5V Tj,max 175C Marking H30R100 Package PG-TO-247-3-21
G
E
PG-TO-247-3-21
M...400v, VGE = 0/+15V, RG = 26)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0,... |
| Description |
Reverse Conducting IGBT with monolithic body diode
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| File Size |
367.51K /
12 Page |
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INFINEON[Infineon Technologies AG]
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| Part No. |
IHW30N100T
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| OCR Text |
...ns Type IHW30N100T VCE 1000V IC 30a VCE(sat),Tj=25C 1.55V Tj,max 175C Marking H30T100 Package PG-TO-247-3-21
G
E
PG-TO-247-3-21
...400v, VGE = 0/+15V, RG = 26.9)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = ... |
| Description |
Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with anti-parallel diode
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| File Size |
356.94K /
12 Page |
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it Online |
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Micro Commercial Components, Corp.
Micro Commercial Components Corp.
MCC[Micro Commercial Components]
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| Part No. |
1N4002GP 1N4005GP 1N4003GP 1N4007GP 1N4001GP 1N4004GP 1N4006GP
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| OCR Text |
...Current Peak Forward Surge IFSM 30a 8.3ms, half sine Current Maximum 1.1V IFM = 1.0A; Instantaneous VF Forward Voltage TJ = 25C* Maximum DC Reverse Current At IR 5.0A TJ = 25C Rated DC Blocking 50A TJ = 125C Voltage Typical Junction CJ 15pF... |
| Description |
1 Amp Glass PassivatedRectifier 50 - 1000 Volts 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
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| File Size |
77.51K /
3 Page |
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it Online |
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Price and Availability
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