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  3a. Datasheet PDF File

For 3a. Found Datasheets File :: 33638    Search Time::1.172ms    
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    2SC4051

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SC4051
OCR Text 3A NPN OUTLINE DIMENSIONS Case : TO-220 Unit : mm RATINGS *oeAbsolute Maximum Ratings Item Symbol Conditions Storage TemperatureTstg Junction Temperature Tj Collector to Base Voltage V CBO Collector to Emitter Voltage V CEOV = 5V ...
Description Switching Power Transistor(3A NPN)

File Size 387.21K  /  12 Page

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    2SC4052

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SC4052
OCR Text 3A NPN OUTLINE DIMENSIONS Case : ITO-220 Unit : mm RATINGS *oeAbsolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage TemperatureTstg -55*150 *Z Junction Temperature Tj 150 *Z Collector to Base Voltage V 600 V CBO Col...
Description Switching Power Transistor(3A NPN)

File Size 387.26K  /  12 Page

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    South Sea Semiconductor
Part No. SSS3401
OCR Text ... i d =-250 a v gs =-10v , i d =-3a v gs =-4.5v , i d =-2 a m v v a na -30 -1 100 -2.5 75 100 -1 65 87 on-state drain current forward t ransconductance t urn-on delay t im e rise t im e t urn-of f delay t im e fall t im e i d(on) g fs t...
Description P-Channel Enhancement Mode MOSFET

File Size 167.12K  /  5 Page

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    SSG4940N

SeCoS Halbleitertechnologie GmbH
Part No. SSG4940N
OCR Text ...- 22 m ? v gs = 10v, i d = 8.3a - - 27 v gs = 4.5v, i d = 7.3a forward transconductance 1 g fs - 40 - s v ds = 15v, i d = 8.3a diode forward voltage v sd - 0.7 - v i s = 2.3a, v gs = 0v pulsed source current(bodydiode) 1 i sm...
Description Dual-N Enhancement Mode Power MOSFET

File Size 147.32K  /  2 Page

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    2SC4559

PANASONIC[Panasonic Semiconductor]
Part No. 2SC4559
OCR Text ... = 5V, IC = 0.1A VCE = 5V, IC = 3A IC = 3A, IB = 0.6A IC = 3A, IB = 0.6A VCE = 10V, IC = 0.5A, f = 1MHz IC = 3A, IB1 = 0.6A, IB2 = -1.2A, VCC = 150V 5.5 1.0 3.0 0.3 400 10 8 1.0 1.5 V V MHz s s s min typ max 100 100 Unit A A V 1 Power...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

File Size 58.09K  /  3 Page

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    2SD2045

SANKEN[Sanken electric]
Part No. 2SD2045
OCR Text ...=120V VEB=6V IC=10mA VCE=2V, IC=3A IC=3A, IB=3mA IC=3A, IB=3mA VCE=12V, IE=-1A VCB=10V, f=1MHz 2SD2045 10max 10max 120min 2000min 1.5max 2.0max 50typ 70typ V V 16.2 Equivalent circuit B C (2.5k)(200) E Silicon NPN Triple Diffu...
Description Silicon NPN Triple Diffused Planar Transistor(Driver for Solenoid/ Motor and General Purpose)
Silicon NPN Triple Diffused Planar Transistor(Driver for Solenoid, Motor and General Purpose)

File Size 25.04K  /  1 Page

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    2SD2137A 2SB1417 2SB1417A 2SD2137

Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2SD2137A 2SB1417 2SB1417A 2SD2137
OCR Text ... -4V, IC = -1A VCE = -4V, IC = -3A VCE = -4V, IC = -3A IC = -3A, IB = - 0.375A VCE = -5V, IC = - 0.2A, f = 10MHz IC = -1A, IB1 = - 0.1A, IB2 = 0.1A, VCC = -50V 30 0.3 1.0 0.2 -60 -80 70 10 -1.8 -1.2 V V MHz s s s 250 min typ max -100 -100 -...
Description Silicon PNP epitaxial planar type(For power amplification) 3 A, 80 V, PNP, Si, POWER TRANSISTOR

File Size 53.34K  /  3 Page

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    2SD2137 2SD2137A

PANASONIC[Panasonic Semiconductor]
Part No. 2SD2137 2SD2137A
OCR Text ...CE = 4V, IC = 1A VCE = 4V, IC = 3A VCE = 4V, IC = 3A IC = 3A, IB = 0.375A VCE = 5V, IC = 0.2A, f = 10MHz IC = 1A, IB1 = 0.1A, IB2 = - 0.1A, VCC = 50V 30 0.3 2.5 0.2 60 80 70 10 1.8 1.2 V V MHz s s s 250 min typ max 100 100 100 100 100 Unit ...
Description Silicon NPN triple diffusion planar type(For power amplification)

File Size 52.93K  /  3 Page

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    SPN2326 SPN2326S26RGB

SYNC POWER Crop.
Part No. SPN2326 SPN2326S26RGB
OCR Text ...tance r ds(on) v gs = 10v,i d =3a 0.26 0.31 ? forward transconductance gfs v ds =10v,i d =3a 2.4 s diode forward voltage v sd i s =1a,v gs =0v 1.2 v dynamic total gate charge q g v ds =80v,v gs =10v i d = 5a 9 13 ...
Description N-Channel Enhancement Mode MOSFET

File Size 194.66K  /  7 Page

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    South Sea Semiconductor
Part No. SSS2301A
OCR Text ...d =-250 a v gs =-4.5v , i d =-2.3a v gs =-2.5v , i d =-1.0a m v v a na -2 0 1 100 -1.0 130 190 -0.4 2 on-state drain current forward tr ansconductanc e tu rn-on delay ti me rise t im e tu rn-of f delay t im e fall ti me i d(on) g fs t ...
Description P-Channel Enhancement Mode MOSFET

File Size 129.41K  /  5 Page

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