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United Monolithic Semiconductors GmbH
UMS[United Monolithic Semiconductors]
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| Part No. |
CHA2295-99F_00 CHA2295 CHA2295-99F/00
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| OCR Text |
...8,27 19,04 18,74 18,36 18,37 17,50 17,01 16,33 15,50 15,04 14,55 13,82 13,27
S21 /
-173,20 151,80 96,83 17,07 -58,60 -122,96 -176,92 138,91 101,55 65,89 35,53 8,26 -17,92 -42,30 -63,68 -85,83 -107,30 -127,20 -173,66 148,76 96,10 17,00 -... |
| Description |
6 - 11GHz Buffer Splitter Amplifier 6 - 11GHz的缓冲放大器，分配器
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| File Size |
113.62K /
7 Page |
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United Monolithic Semicondu...
UMS[United Monolithic Semiconductors]
United Monolithic Semiconductors GmbH
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| Part No. |
CHA2069-99F_00 CHA2069 CHA2069-99F/00
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| OCR Text |
....6 -3.30 128.2 -5.18 90.4 -6.94 50.5 -7.98 11.7 -8.31 -23.4 -8.58 -54.0 -9.01 -77.8 -9.66 -97.0 -10.27 -112.2 -11.44 -125.0 -12.60 -132.7 -1...68 -101.2 -53.88 -123.9 -55.05 -131.7 -56.50 -130.9 -54.45 -134.4 -52.53 -163.2 -54.62 -174.1 -53.75... |
| Description |
18-31GHz Low Noise Amplifier 18 - 31GHz之间低噪声放大器
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| File Size |
165.19K /
8 Page |
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CREE[Cree, Inc]
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| Part No. |
CGH40045
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| OCR Text |
...f = 1 MHz GSS P3dB
11.0 45 50 -
12.0 55 55 TBD
- - - -
dB W % Y
VDD = 28 V, IDQ = 800 mA VDD = 28 V, IDQ = 800 mA VDD = 28 ...68 169.90 169.12 168.32 167.51 166.68 165.84 164.97 164.08 163.16 162.21 161.22 160.21 159.15 158.05... |
| Description |
45 W, RF Power GaN HEMT
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| File Size |
906.44K /
12 Page |
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CREE[Cree, Inc]
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| Part No. |
CGH40010
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| OCR Text |
...mA, Freq = 2.0 GHz
18 80 70 60 50 40 30 20 13 10 0 26 28 30 32 34 36 38 40 42 (Drain Efficiency) (%) (Drain Efficiency) (%)
Cree, Inc. 460...68 -151.05 -156.75 -161.33 -165.16 -168.44 -171.33 -173.91 -176.25 -178.42 179.56 177.66 175.86 174.... |
| Description |
10 W, RF Power GaN HEMT
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| File Size |
760.87K /
12 Page |
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it Online |
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MIMIX[Mimix Broadband]
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| Part No. |
CGB7011-BD-000V CGB7011-BD
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| OCR Text |
...mA Typ., Rbias = 30 , Zs = Zl = 50 2. Values reflect performance in recommended application circuit. 3. Only on-wafer DC test is done. Devic...68.85
0.060 0.061 0.061 0.061 0.062 0.063 0.064 0.065 0.066 0.067 0.069 0.070 0.072 0.073 0.075 0... |
| Description |
DC-6.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier
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| File Size |
481.12K /
7 Page |
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INFINEON[Infineon Technologies AG]
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| Part No. |
CFY27-P CFY27 CFY27-38
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| OCR Text |
...V DS = 3 V, I D = 120 mA, Z o = 50 f [GHz] 0,5 0,6 0,7 0,8 0,9 1,0 1,1 1,2 1,3 1,4 1,5 1,6 1,7 1,8 1,9 2,0 2,1 2,2 2,3 2,4 2,5 2,6 2,7 2,8 ...68 -74 -80 -86 -91 -96 -101 -106 -110 -114 -118 -122 -126 -130 -133 -136 -139 -142 -145 -148 -150 -1... |
| Description |
HiRel Ku-Band GaAs General Purpose MESFET
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| File Size |
552.43K /
8 Page |
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it Online |
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GSI Technology, Inc.
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| Part No. |
GS840FH18AT-12 GS840FH18AGT-8.5I GS840FH32AGT-12I GS840FH32AT-12I GS840FH32AGT-8.5I GS840FH36AT-10I GS840FH36AGT-10I GS840FH32AGT-8I GS840FH32AGT-10
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| OCR Text |
...9 40 41 42 43 44 45 46 47 48 49 50 nc gs840fh18/32/36at-8/8.5/10/12 rev: 1.08 4/2007 2/22 ? 1999, gsi technology specifications cited are ...68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 1... |
| Description |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 12 ns, PQFP100
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 8.5 ns, PQFP100
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 8 ns, PQFP100
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 32 CACHE SRAM, 12 ns, PQFP100
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 32 CACHE SRAM, 8.5 ns, PQFP100
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 36 CACHE SRAM, 10 ns, PQFP100
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 32 CACHE SRAM, 8 ns, PQFP100
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 32 CACHE SRAM, 10 ns, PQFP100
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| File Size |
553.63K /
22 Page |
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it Online |
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http://
MIMIX[Mimix Broadband]
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| Part No. |
CFK2162-P1_06 CFK2162-P1 CFK2162-P1-000T CFK2162-P106
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| OCR Text |
...hase length of input and output 50 line varies as a function of exact desired frequency of operation. Output shunt inductor effects output performance. Celeritek recommends the use of a high impedance printed inductor Lambda/4 in length. Pl... |
| Description |
800-900 MHz 34 dBm Power GaAs FET
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| File Size |
466.21K /
4 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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