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INTERSIL[Intersil Corporation]
Intersil, Corp.
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| Part No. |
FSYE13A0R4 FSYE13A0D FSYE13A0D1 FSYE13A0D3 FSYE13A0R FSYE13A0R1 FSYE13A0R3
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| OCR Text |
... 0V to 12V VGS = 0V to 2V VDD = 50v, ID = 12A ID = 12A, VDS = 15V VDS = 25V, VGS = 0V, f = 1MHz 0.093 36 6.5 20 8 760 310 110 0.160 0.246 15...8a, VGS = 12V
Gate to Source Leakage Current
Drain to Source On-State Voltage Drain to Source ... |
| Description |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 12 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
55.19K /
8 Page |
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POWEREX[Powerex Power Semiconductors]
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| Part No. |
FK16KM-6
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| OCR Text |
...ICS (TYPICAL) 40 TC = 25C VDS = 50v Pulse Test 101 7 5
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) TC = 25C 75C 125C 3 2 100 7 5 3 2 10-1 0 10 23 5 7 101
DRAIN CURRENT ID (A)
24
16
8
FORWARD TRANSFER ADMITTANCE ... |
| Description |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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| File Size |
61.44K /
5 Page |
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http://
International Rectifier
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| Part No. |
IRDC3039EVAL
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| OCR Text |
...5V 3 ECJ-2VF1E104Z 5600pF, X7R, 50v 1 ECU-V1H562KBG 470pF, X7R, 50v 1 ECJ-2VC1H471J 330uF, 40mV 2 6TPB-330M 1mF, Y5V, 16V 4 ECJ-2VF1C105Z 1m...8a, Fs=200KHz
Figure 4 - Normal condition at No Load. Ch1: HDrv, Ch2: LDrv, Ch4: Inductor Current... |
| Description |
IRU3039 EVALUATION BOARD USER GUIDE
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| File Size |
644.56K /
8 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
IRF614B IRF614BFP001
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| OCR Text |
...2. L = 9.2mH, IAS = 2.8a, VDD = 50v, RG = 25 , Starting TJ = 25C 3. ISD 2.8a, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature
(c)2001 Fai... |
| Description |
250v N-Channel B-FET / Substitute of IRF614 & IRF614A
250v N-Channel MOSFET
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| File Size |
852.78K /
10 Page |
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it Online |
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Infineon
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| Part No. |
SPI08N80C3
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| OCR Text |
...gy, single pulse
ID=1.6A, VDD =50v
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=8a, VDD=50v
Avalanche current, repetitive tAR limited by Tjmax Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25C... |
| Description |
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
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| File Size |
267.87K /
13 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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| Part No. |
IRFD9120 FN2285
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| OCR Text |
...GS = -10V, (Figures 7, 8) VDS < 50v, ID = -0.8a (Figure 11) VDD = 0.5 x Rated BVDSS, ID = -1.0A, RG = 9.1, VGS = -10V, (Figures 16, 17) RL = 50 for VDD = -50v MOSFET Switching Times are Essentially Independent of Operating Temperature VGS =... |
| Description |
1.0A/ 100V/ 0.6 Ohm/ P-Channel Power MOSFET
1.0A, 100V, 0.6 Ohm, P-Channel Power MOSFET
From old datasheet system
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| File Size |
52.31K /
6 Page |
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it Online |
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CET
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| Part No. |
CEB02N6A CEI02N6A CEF02N6A CEP02N6A
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| OCR Text |
...250A VGS = 10V, ID = 0.8a VDS = 50v, ID = 0.8a 2 5.8 0.8 176 48 21 11 16 28 16 15 2.4 8.7 1.5 1.5 27 40 35 40 21 Min 650 25 100 -100 4 7.5 Typ Max Units V
A
4
nA nA V S pF pF pF ns ns ns ns nC nC nC A V
VDS = 25V, VGS = 0V, f = 1... |
| Description |
N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
126.50K /
4 Page |
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it Online |
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