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  6 03. Datasheet PDF File

For 6 03. Found Datasheets File :: 89219    Search Time::1.703ms    
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    FS70VSH-03

Mitsubishi Electric Corporation
Powerex Power Semiconductors
Part No. FS70VSH-03
OCR Text ...ons in mm 4.5 1.3 1.5MAX. 8.6 0.3 9.8 0.5 3.0 +0.3 -0.5 0 -0 +0.3 1 5 0.8 B 0.5 qwe wr 2.6 0.4 2.5V DRIVE ...03 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS...
Description MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 43.58K  /  4 Page

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    FS70VSJ-03

Powerex Power Semiconductors
Mitsubishi Electric Corporation
Part No. FS70VSJ-03
OCR Text ...3 r 10.5MAX. 1.5MAX. 8.6 0.3 9.8 0.5 3.0 +0.3 -0.5 0 -0 +0.3 1 5 0.8 B 0.5 qwe wr 2.6 0.4 4V DRIVE VD...03 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS...
Description BANANA PLUG, BLK
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 42.94K  /  4 Page

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    意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
SGS Thomson Microelectronics
Part No. 1891-03 SD1891-03 1893-03
OCR Text 6 GHz SATCOM APPLICATIONS .1. .28 .GOLD .POLYSI .OVERLAY .HI .P 65 GHz VOLTS METALLIZED SYSTEM LICON SITE BALLASTING DIE GEOMETRY GH R...03 BRANDING 1891-03 PIN CONNECTION DESCRIPTION The SD1891-03 is a 28 V silicon NPN transistor ...
Description ENHANCED PATCH CORD, PINK 7 FT.
RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS
1.6 GHz SATCOM APPLICATIONS RF & MICROWAVE TRANSISTORS

File Size 65.11K  /  5 Page

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    SPB100N03S2-03 SPP100N03S2-03 SPI100N03S2-03

INFINEON[Infineon Technologies AG]
Part No. SPB100N03S2-03 SPP100N03S2-03 SPI100N03S2-03
OCR Text ...25C Value 100 100 400 810 30 6 20 300 -55... +175 55/175/56 Unit A ID Pulsed drain current TC=25C ID puls EAS EAR dv/dt VGS ...03 SPP100N03S2-03,SPB100N03S2-03 Thermal Characteristics Parameter Characteristics Thermal resistanc...
Description OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3.3mOhm, 100A, NL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.0mOhm, 100A, NL

File Size 416.00K  /  8 Page

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    SPB100N03S2L-03 SPP100N03S2L-03 SPI100N03S2L-03

INFINEON[Infineon Technologies AG]
Part No. SPB100N03S2L-03 SPP100N03S2L-03 SPI100N03S2L-03
OCR Text ...25C Value 100 100 400 810 30 6 20 300 -55... +175 55/175/56 Unit A ID Pulsed drain current TC=25C ID puls EAS EAR dv/dt VGS ...03 SPP100N03S2L-03,SPB100N03S2L-03 Thermal Characteristics Parameter Characteristics Thermal resista...
Description 100 A, 30 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 2.7mOhm, 100 A, LL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3mOhm, 100A, LL

File Size 416.96K  /  8 Page

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    SPB100N04S2L-03 SPP100N04S2L-03

INFINEON[Infineon Technologies AG]
Part No. SPB100N04S2L-03 SPP100N04S2L-03
OCR Text ...S Ptot T j , Tstg 400 810 30 6 20 300 -55... +175 55/175/56 kV/s V W C mJ Avalanche energy, single pulse ID=80A, V DD=25V, RGS=25 ...03 SPB100N04S2L-03 Thermal Characteristics Parameter Characteristics Thermal resistance, junction -...
Description Low Voltage MOSFETs - TO220/263; 100A; 40V; LL;3.3mohm
OptiMOS Power-Transistor

File Size 308.76K  /  8 Page

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    FS50ASJ-03

Renesas Electronics Corporation
Part No. FS50ASJ-03
OCR Text ... FS50ASJ-03 OUTLINE DRAWING 6.5 5.0 0.2 Dimensions in mm r 5.5 0.2 1.5 0.2 0.5 0.1 1.0MAX. 2.3MIN. 10MAX. 1.0 A 0.5 0.2 0.8 0.9MAX. 2.3 2.3 2.3 q w e wr 4V DRIVE VDSS .........
Description MITSUBISHI Nch POWER MOSFET

File Size 74.60K  /  5 Page

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    FX20ASJ-03

Renesas Electronics Corporation
Part No. FX20ASJ-03
OCR Text ... FX20ASJ-03 OUTLINE DRAWING 6.5 5.0 0.2 4 Dimensions in mm 5.5 0.2 1.5 0.2 0.5 0.1 1.0 max 2.3 min 10 max 1.0 A 0.5 0.2 0.8 0.9 max 2.3 2.3 2.3 1 2 3 3 * 4V DRIVE * VDSS ...........
Description MITSUBISHI Pch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 75.76K  /  5 Page

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    FX30ASJ-03 FX30ASJ-03-T13

Renesas Electronics Corporation
Part No. FX30ASJ-03 FX30ASJ-03-T13
OCR Text ...00 Aug 07, 2006 page 1 of 6 FX30ASJ-03 Electrical Characteristics (Tch = 25C) Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-stat...
Description High-Speed Switching Use Pch Power MOS FET

File Size 166.35K  /  7 Page

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