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  6.400mhz Datasheet PDF File

For 6.400mhz Found Datasheets File :: 1482    Search Time::1.375ms    
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    MCIMX3510

Freescale Semiconductor, Inc
Part No. MCIMX3510
OCR Text .... . . . . . . . . . . . . . . . 6 2.3. Advanced Power Management Overview . . . . . . . . 6 2.4. ARM11 Microprocessor Core . . . . . . . . ....400MHz 532MHz3 400MHz 532MHz3 400MHz 532MHz3 Table 93 Table 93 Table 93 Table 93 Table 93 Table 9...
Description i.MX35 Applications Processors for Industrial and Consumer Products

File Size 2,077.86K  /  148 Page

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    BF961

Vishay Telefunken
Part No. BF961
OCR Text ...ss Coss Gps Min 12 Typ 15 3.7 1.6 25 1.6 20 50 1.8 Max Unit mS pF pF fF pF dB dB dB VG1S = 0, VG2S = 4 V GS = 2 mS, GL = 0.5 mS, f = 2...400MHz 500MHz 600MHz 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 Re (y21) ( mS ) VDS - Drain So...
Description N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
From old datasheet system
N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode

File Size 121.38K  /  7 Page

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    BF964 BF964S

Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
Vishay Telefunken
Vishay Siliconix
Part No. BF964 BF964S
OCR Text ...S=4V f=1MHz 0V -0.5V -1V 2 4 6 8 10 12 14 16 3 6 9 12 15 18 21 24 27 30 VDS - Drain Source Voltage ( V ) 12765 ID - ...400MHz VDS=15V VG2S=4V f=100...1300MHz ID=20mA 100MHz 0 2 4 6 8 10 12 14 16 18 20 VG2S - Gate ...
Description N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N沟道双栅MOS - Fieldeffect四极管,耗尽
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
From old datasheet system

File Size 126.33K  /  8 Page

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    BF988

Vishay Intertechnology,Inc.
Vishay Siliconix
Part No. BF988
OCR Text ...85.2 -91.8 -8.3 -16.1 -24.0 -31.6 -39.2 -46.4 -53.2 -60.3 -67.1 -74.1 -81.1 -88.0 -94.4 -8.4 -16.4 -24.5 -32.3 -39.8 -47.0 -54.1 -61.3 -67.9...400MHz 100MHz 0 2 4 VDS - Drain Source Voltage ( V ) Re (y11) ( mS ) Figure 7. Output Capac...
Description From old datasheet system
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

File Size 138.32K  /  8 Page

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    Advanced Semiconductor ...
Part No. APM0400-P33
OCR Text ... pout vs pin@400mhz -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 0 5 10 15 20 25 30 35 40 pout (dbm) pin (dbm) current vs pin@400mhz -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 0 200 400 600 800 1000 1200 1400 current (ma) pin (dbm) ...
Description Low Noise and High OIP3 Medium Power Amplifier Module

File Size 719.55K  /  4 Page

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    RFVA0016TR13 RFVA0016TR7 RFVA0016SQ

RF Micro Devices
Part No. RFVA0016TR13 RFVA0016TR7 RFVA0016SQ
OCR Text ...ontrol 0v 1v 1.4v 1.8v 2.2 4 6 8 10 12 14 16 18 20 727 729 731 733 735 737 739 741 743 745 747 noise figure (db) frequency (mhz) noise figure versus frequency versus voltage control 0v 1v 1.4v 1.8v 2.2v 2.6v -70 -69 -68 -67 -66 -65...
Description ANALOG CONTROLLED VARIABLE GAIN AMPLIFIER 400MHz TO 2810MHz

File Size 1,747.74K  /  19 Page

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    L9D320G32BG6 L9D320G32BG6E25 L9D320G32BG6I25 L9D320G32BG6M25

LOGIC Devices Incorporated
Part No. L9D320G32BG6 L9D320G32BG6E25 L9D320G32BG6I25 L9D320G32BG6M25
OCR Text ...gnals. CAS (READ) latency (CL): 6, 8, and 10 CAS (WRITE) latency (CWL): 6, 7 and 8 Fixed burst length (BL) of 8 and burst chop (BC) of 4 Sel...400MHz * Extended: 533MHz and 400MHz * Mil-Temp: 400MHz Data Transfer Rates: * Industrial: 1333, 106...
Description 2.0 Gb, DDR3, 64 M x 32 Integrated Module (IMOD)

File Size 3,130.65K  /  154 Page

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    M395T6553GZ4 M470T5663FB3 M470T5663QZH3 M470T2864QZH3 M395T1K66AZH4 M393T5160FB3 M393T5160QZ3 M393T5160QZHA M378T6464EHS

Samsung semiconductor
Part No. M395T6553GZ4 M470T5663FB3 M470T5663QZH3 M470T2864QZH3 M395T1K66AZH4 M393T5160FB3 M393T5160QZ3 M393T5160QZHA M378T6464EHS M470T6464EHS M470T5267AZH3 M395T5163FB4 M393T1G60QJMA K4T51043QI M395T5663QZH4 M393T5663QZHA M391T5663QZH3 M393T5663QZ3 M378T2863QZHS M391T2863QZH3 M391T2863EH3 M391T2863FB3 M393T1K66AZHA M470T6464QZH3 M378T6464QZH3 M395T1G60QJM4 M395T2863FB4 M395T2863QZH4 M395T5160FB4 M395T5160QZH4 M395T5163QZH4 M395T5263AZH4 M395T5663FB4 M378T5263AZH3 M391T5263AZH3 M393T5260AZHA M393T2863QZHA M393T2863FB3 M393T2863QZH3 M391T5663FB3 M378T5663FB3
OCR Text ...ORDERING INFORMATION 1 2 3 4 5 6 7 8 Apr. 2010 DDR2 SDRAM Memory 9 10 11 K4 TXXXXXXX-XXXX SAMSUNG Memory DRAM DRAM Type ...400MHz @ CL=6, tRCD=6, tRP=6) (400MHz @ CL=5, tRCD=5, tRP=5) -2- Product Guide 2. DDR2 SDRAM...
Description DDR2 SDRAM Memory

File Size 277.04K  /  14 Page

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    MCIMX351AJQ4C MCIMX355AJQ4C MCIMX356AJQ4C MCIMX351AJQ5C MCIMX355AJQ5C MCIMX356AJQ5C MCIMX351AVM5B MCIMX355AVM5B MCIMX356

Freescale Semiconductor, Inc
Part No. MCIMX351AJQ4C MCIMX355AJQ4C MCIMX356AJQ4C MCIMX351AJQ5C MCIMX355AJQ5C MCIMX356AJQ5C MCIMX351AVM5B MCIMX355AVM5B MCIMX356AVM5B MCIMX351AVM4B MCIMX355AVM4B
OCR Text .... . . . . . . . . . . . . . . . 6 2.3. Advanced Power Management Overview . . . . . . . . 6 2.4. ARM11 Microprocessor Core . . . . . . . . ....400MHz 532MHz3 400MHz 532MHz3 400MHz 532MHz3 Table 93 Table 93 Table 93 Table 93 Table 93 Table 9...
Description i.MX35 Applications Processors for Industrial and Consumer Products

File Size 2,071.79K  /  148 Page

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    RA45H4047M RA45H4047M-01 RA45H4047M-E01

Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. RA45H4047M RA45H4047M-01 RA45H4047M-E01
OCR Text ...MODULE RA45H4047M RATING 17 6 100 55 -30 to +110 -40 to +110 UNIT V V mW W C C MAXIMUM RATINGS (Tcase=+25C, unless otherwise specifie...400MHz, VDD=12.5V, VGG=5V 24 20 16 12 8 4 0 20 DRAIN CURRENT IDD(A) DRAIN CURRENT IDD(A) DRAIN CU...
Description MITSUBISHI RF MOSFET MODULE 400-470MHz 45W 12.5V MOBILE RADIO 三菱射频MOSFET模块400 - 470MHz512.5V移动通信

File Size 91.54K  /  9 Page

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