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8ghz Datasheet PDF File

For 8ghz Found Datasheets File :: 1018 Search Time::1.14ms
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				Sony
Part No.	CXG1045N
OCR Text	... (Typ.) @900MHz 0.7dB (Typ.) @1.8ghz * High power switching P1dB: 38dBm (Typ.) @900MHz 37dBm (Typ.) @1.8ghz * Small package SSOP-8pin: (3 x 6.4 x 1.25mm) * Low current: 200A (Typ.) Application * GSM900 or GSM1800 handsets * GSM900/GSM1800 d...
Description	High Power DPDT Switch for GSM From old datasheet system
File Size	60.34K / 5 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	FA01219A
OCR Text	8ghz band small size handheld radio. 1 Unit:mm GND 8 FEATURES * Low voltage * High gain * High efficiency * High power 3.5V 22.5B 50% 30.5dBm 2 7 3 6 4 5 APPLICATION PDC0.8ghz GND 10.0 0.8 2.0 6.0 1 RF ...
Description	GaAs FET HYBRID IC From old datasheet system
File Size	22.92K / 4 Page	View it Online	Download Datasheet

				Eudyna Devices Inc
Part No.	FLC057WG
OCR Text	...DS=10V P1dB & add vs. VDS f=8ghz IDS 0.6 IDSS Output Power (dBm) P1dB (dBm) 28 IDS 0.6 IDSS 26 Pout 24 22 20 18 16 6 GHz 8 GHz 28 27 26 add P1dB 50 40 30 add (%) 6 GHz 8 GHz 50 40 30 20 10 add (%) add 10...
Description	C-Band Power GaAs FET
File Size	86.42K / 4 Page	View it Online	Download Datasheet

				Eudyna Devices Inc
Part No.	FLC157XP
OCR Text	...Case VDS = 10V IDS 0.6IDSS f = 8ghz Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 400mA VDS = 5V, IDS = 30mA IGS = -30A Min. 150 -1.0 -5 30.5 5.0 Limit Typ. Max. 600 300 -2.0 31.5 6.0 29.5 15 900 -3.5 18 Unit mA mS V V dBm dB % C/W ...
Description	GaAs FET & HEMT Chips
File Size	55.15K / 4 Page	View it Online	Download Datasheet

				Fujitsu, Ltd. FUJITSU[Fujitsu Media Devices Limited] Fujitsu Component Limited.
Part No.	FRM5W232BS
OCR Text	...AC-Coupled, RL=50, Average in 1.8ghz 2.5Gb/s, NRZ, PRBS=223-1, B.E.R.=10-10, Rext=-13dB, VR is set at optimum value Ta=25C Ta=-40 to +85C 2.5Gb/s, NRZ, PRBS=223-1, B.E.R.=10-10, Rext=-13dB, VR is set at M=3, Ta=-40 to +85C Min. 0.8 0.75 40 ...
Description	Incorporates a 30 micron InGaAs Avalanche Photodiode 采用0微米铟镓砷雪崩光电二极管
File Size	111.13K / 4 Page	View it Online	Download Datasheet

				SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
Part No.	Q62702-F1377 BFP180
OCR Text	...er Gain Gma, Gms = f(IC) f = 1.8ghz VCE = Parameter 16 8V dB 3V G 16 G 12 5V 10 14 2V 8 12 6 10 1V 4 8 0.7V 3V 2V 1V 2 0 0.0 0.7V 6 0.0 1.0 2.0 3.0 4.0 mA IC 6.0 1.0 2.0 3.0 4....
Description	NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) From old datasheet system
File Size	76.23K / 8 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TB31356AFL
OCR Text	8ghz,600MHz DUAL-PLL FREQUENCY SYNTHESIZER The TB31356AFL is a PLL synthesizer used for application of the digital mobile communication and similar other applications. The device features two independently-controllable, built-in PLLs. FEAT...
Description	1.8ghz,600MHz DUAL-PLL FREQUENCY SYNTHESIZER
File Size	294.71K / 10 Page	View it Online	Download Datasheet

				Infineon Technologies A... ETC INFINEON[Infineon Technologies AG]
Part No.	CFH800
OCR Text	...50dB; Ga = 17dB @ 3V; 30mA; f=1.8ghz) Low cost miniature package SOT343 LG = 0.4m; W G = 800m Tape and Reel packaging Electrostatic discharge sensitive device, observe handling precautions! Pin assignment: 1 = gate 2 = source 3 = drain 4 =...
Description	Typical Common Source S - Parameters
File Size	71.94K / 7 Page	View it Online	Download Datasheet

				United Monolithic Semic... UMS[United Monolithic Semiconductors]
Part No.	CHA7010-99 CHA7010-99F_00 CHA7010 CHA7010-99F/00
OCR Text	...aturated output power (8.4 to 9.8ghz) Saturated output power (9.8 to 10.4GHz) Saturated output power variation versus temperature Output power @ 1dBc (8.4 to 9.8ghz) Output power @ 1dBc (9.8 to 10.4GHz) Power Added Efficiency in saturation ...
Description	X-band GaInP HBT High Power Amplifier
File Size	156.54K / 7 Page	View it Online	Download Datasheet

				Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group]
Part No.	Q62702-F1490 BFR180W
OCR Text	...er Gain Gma, Gms = f(IC) f = 1.8ghz VCE = Parameter 15 dB 13 10V 5V 3V 2V G 15 14 G 12 11 10 13 12 11 10 9 8 1V 9 8 0.7V 7 6 5 4 3 1V 0.7V 7 6 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 mA 5.0 IC 2 1 0 0.0 0...
Description	NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) From old datasheet system
File Size	56.55K / 7 Page	View it Online	Download Datasheet

For 8ghz Found Datasheets File :: 1018 Search Time::1.14ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |